• 한국전자통신학회논문지
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• 제9권11호
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• pp.1227-1232
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• 2014

본 논문은 기존의 poly length만의 축소와 달리 입, 출력 소자를 포함한 core 디바이스의 $0.13{\mu}m$ 디자인을 10% 축소하는 것으로 여러 채널 길이에 따른 body effect와 doping profile simulation을 해석하였다. 축소 전의 DC 파라미터 매칭을 위하여 게이트 산화막의 decoupled plasma nitridation 처리와 LDD(Lightly Doped Drain) 이온주입 전 TEOS(Tetraethylortho silicate) 산화막 $100{\AA}$ 그리고 LDD 이온주입을 22o tilt-angle(45o twist-angle)로 최적화하였고 그 결과 축소 전의 5%의 범위에서 매칭됨을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1475-1477
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• 1997

We have fabricated a novel LDD structured polysilicon thin film transistor with a simple fabrication process, compared with the conventional LDD poly-Si TFT, without LDD implantation by employing taper etched $SiO_2$ film instead of LDD implant mask. The leakage current of the novel LDD device is reduced significantly in OFF state while keeping the ON current to be almost identical to that of the non-LDD poly-Si TFTs.

• 한국전자통신학회논문지
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• 제9권8호
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• pp.847-852
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• 2014

반도체 소자 제조에서 비용 절감을 위한 공정기술의 스케일링 가속화 경향에 따라 축소기술에 대한 요구가 증가되고 있다. 축소에 따른 또 다른 가장 큰 문제점의 하나는 Hot Carrier Injection (HCI) 특성의 열화이다. 이는 축소 과정에서 생기는 불가피한 가장 큰 이슈중의 하나이며, 특히 입출력 소자에 있어 극복하기 어려운 부분이다. 이의 개선을 위해 유효 채널 길이를 늘이고자 LDD 임플란트 공정 이전에 산화막이 추가되었고, 또한 I/O LDD 임플란트 공정의 이온 입사 각도를 최적화함으로써, LDD 영역에서 E-field 열화 없이 HCI 규격을 만족할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.97-98
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• 2006

For high performance transistor in the 0.14um generation, high speed sram is using a weak region of SCE(Short Channel Effect). It causes serious SCE problem (Vth Roll-Off and Punch-Through etc). This paper shows improvement of Vth roll-off and Ion/Ioff characteristics through high concentration Pocket implant, LDD(Light Dopped Dram) and low energy Implant to reduce S/D Extension resistance. We achieve stabilized Vth and Improved transistor Ion/Ioff performance of 10%.

• The Journal of Advanced Prosthodontics
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• 제9권3호
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• pp.224-231
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• 2017

PURPOSE. This study was designed to evaluate the teeth and dental implants during dental maintenance therapy over 3 years in different conditions after periodontal and dental prosthetic treatment. MATERIALS AND METHODS. 166 patients received maintenance therapy. 59 patients were treated with 2% minocycline-HCl ointment as local drug delivery (LDD) (L group) and 107 patients were treated without LDD (NL group). Clinical data was collected in maintenance period for evaluation. Patients were classified into groups depending on the application of LDD with maintenance therapy, the type of dental treatment before maintenance period (Pre-Tx), the frequency (F-MT), and regularity (R-MT) of maintenance therapy. RESULTS. The numbers of lost teeth (N-teeth, P=.003) and newly placed dental implants (N-implants, P=.022) are significantly different according to Pre-Tx. F-MT among patients who received surgical dental treatment before maintenance period showed statistical differences in N-teeth (P=.041), but not in N-implants (P=.564). All of the patients in L group showed high F-MT (F-MT1). In NL group, there were no statistical differences in N-teeth or N-implants according to F-MT or R-MT. In F-MT1 group, application of LDD made N-teeth significantly different from both Pre-Tx groups while no significant difference could be found in N-implant. Independent t-test and one-way ANOVA were selected for statistical analysis. CONCLUSION. The regular maintenance therapy and LDD can be effective for teeth during maintenance period. It is not only pharmacological efficacy in decreasing bacterial species that makes LDD a useful adjunct. Application of LDD also motivates patients to take adequate check-ups in the aspects of both frequency and regularity.

• Journal of Periodontal and Implant Science
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• 제27권4호
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• pp.701-722
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• 1997

It was reported that low dose doxycycline(LDD) regimen could inhibit pathologically elevated collagenase activity in the gingival crevicular fluid of petients with adult periodontitis without producing typical antibiotic side effects. The purpose of this study was to evaluate the effects of LDD regimen(20mg) administered during non-surgical therapy on clinical index and gingival crevicular fluid enzyme activity in diabetics who are at high risk for periodontal disease. Forty-nine subjects having at least two sites with probing pocket depths greater than 4mm were selected. In this double-blind, placebo-controlled study, the patients were administered 20 mg doxycycline capsule or placebo capsule b.i.d. for 2 weeks. Clinical parameters of dental plaque, gingival inflammation, probing pocket depth and probing attachment level were assessed at week 0, 2, 4, and 8. Gingival crevicular fluid samples were collected at the same time to evaluate the activities of collagenase and elastase. Clinical parameters and elastase activity were significantly reduced in all groups compared to the baseline value after treatment. Significantly greater reduction in pocket depth and gain in attachment level was shown in the LDD-administered group compared to placebo group in both adult periodontitis and diabetic patients. Total collagenase activity was also reduced significantly in all groups after treatment, but the greater reduction was seen in the LDD-administered diabetics group compared to relevant placebo group(at 4, 8week). Significantly greater reduction in active collagenase activity was also seen in the LDD-administered group compared to placebo group in diabetic patients(at 2, 4, 8week). These results indicated that use of low dose doxycycline could be aueseful adjunct to instrumentation therapy in the management of diabetic patient with periodontitis as well as adult periodontitis patient.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2000년도 춘계종합학술대회
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• pp.442-446
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• 2000

MOSFET는 속도의 증가, 전력 감소 그리고 집적도 증가를 위한 끊임없는 요구에 대응하여 최근 10년간 많은 변화를 겪었다. 그로 인한 스켈링이론이 부각되었고 풀 밴드 Monte Carlo 디바이스 시뮬레이터는 다른 형태의 n-channel MOSFET 구조에서 hot carrier에 대한 디바이스 스켈링의 효과를 연구하는데 사용되었다. 본 연구에서는 단일 Source/Drain 주입의 Conventional MOSFET와 저도핑 Drain(LDD) MOSFEI 그리고 MOSFET을 고도핑된 ground plane 위에 적충하여 만든 EPI MOSFET에 대하여 TCAD(Technology Compute. Aided Design)를 사용하여 스켈링 및 시뮬레이션하였다. 스켈링방법은 Constant-Voltage 스켈링을 사용하였고 시뮬레이션 결과로 스켈링에 대한 MOSFET의 특성과 임팩트 이온화, 전계를 비교 분석을 통해 TCAD의 실용성을 살펴보았고 스켈링을 이해하기 위한 물리적인 토대를 제시하였다.

• 전기전자학회논문지
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• 제26권3호
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• pp.422-429
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• 2022

조도센서 칩은 아날로그 회로의 트리밍이나 디지털 레지스터의 초기 값을 셋팅하기 위해 소용량의 eFuse(electrical Fuse) OTP(One-Time Programmable) 메모리 IP(Intellectual Property)를 필요로 한다. 본 논문에서는 1.8V LV(Low-Voltage) 로직 소자를 사용하지 않고 3.3V MV(Medium Voltage) 소자만 사용하여 128비트 eFuse OTP IP를 설계하였다. 3.3V 단일 MOS 소자로 설계한 eFuse OTP IP는 1.8V LV 소자의 gate oxide 마스크, NMOS와 PMOS의 LDD implant 마스크에 해당되는 총 3개의 마스크에 해당되는 공정비용을 줄일 수 있다. 그리고 1.8V voltage regulator 회로가 필요하지 않으므로 조도센서 칩 사이즈를 줄일 수 있다. 또한 조도센서 칩의 패키지 핀 수를 줄이기 위해 프로그램 전압인 VPGM 전압을 웨이퍼 테스트 동안 VPGM 패드를 통해 인가하고 패키징 이후는 PMOS 파워 스위칭 회로를 통해 VDD 전압을 인가하므로 패키지 핀 수를 줄일 수 있다.