• 제목/요약/키워드: LCD glass substrate

검색결과 85건 처리시간 0.028초

A Study on the Uniformity Improvement of Residual Layer of a Large Area Nanoimprint Lithography

  • Kim, Kug-Weon;Noorani, Rafigul I.;Kim, Nam-Woong
    • 반도체디스플레이기술학회지
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    • 제9권4호
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    • pp.19-23
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    • 2010
  • Nanoimprint lithography (NIL) is one of the most versatile and promising technology for micro/nano-patterning due to its simplicity, high throughput and low cost. Recently, one of the major trends of NIL is large-area patterning. Especially, the research of the application of NIL to TFT-LCD field has been increasing. Technical difficulties to keep the uniformity of the residual layer, however, become severer as the imprinting area increases. In this paper we performed a numerical study for a large area NIL (the $2^nd$ generation TFT-LCD glass substrate ($370{\times}470$ mm)) by using finite element method. First, a simple model considering the surrounding wall was established in order to simulate effectively and reduce the computing time. Then, the volume of fluid (VOF) and grid deformation method were utilized to calculate the free surfaces of the resist flow based on an Eulerian grid system. From the simulation, the velocity fields and the imprinting pressure during the filling process in the NIL were analyzed, and the effect of the surrounding wall and the uniformity of residual layer were investigated.

고온 소결형 그라비어 오프셋용 Ag 페이스트의 물성 연구 (A Study on Properties on High Temperature Sintering Gravure Off-set Ag Paste)

  • 박창원;황보혁;조정우;남수용
    • 한국인쇄학회지
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    • 제29권2호
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    • pp.71-82
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    • 2011
  • Electronic display markets has been developed. The cathode ray tube of brown form recently celebrated their 100th by first display. Also LCD of flat form recently celebrated their 25th by second display and it has advantage of small volume, lower consumption power. But FPD has problem that is property of brittle and noncarrying by glass substrate. Therefore the arrival of portable electronics devices has put an increasing premium on durable, lightweight and inexpensive display components. It is flexible display by third display. Also electronics field such as printed wiring board, RFID, membrane switch prefer flexible display. The conductive pattern can be used mostly in field of electronic displays and electronics. This manufacture of conductive pattern in present used is screen printing. The the conductive pattern. It has advantages of flexibility, high conductivity, drying in low temperature, good conductivity. screen printing has problem that is low productivity and use not flexible substrate because of high fire temperature. This study was developed novel method to form the conductive pattern. It has advantages of flexibility, high conductivity, drying in low temperature, good conductivity.

유도결합 플라즈마(ICP) Sputtering에 의한 평판 디스플레이(FPD)용 ITO 박막의 저온 증착 (Low Temperature Deposition of ITO Thin Films for Flat Panel Displays by ICP Assisted DC Magnetron Sputtering)

  • 구범모;정승재;한영훈;이정중;주정훈
    • 한국표면공학회지
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    • 제37권3호
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    • pp.146-151
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    • 2004
  • Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was >85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

슬릿 코터 노즐의 최적 설계 및 고속도포 공정의 적용 가능성에 대한 연구

  • 김태민;김광선;김기운;임태현;정은미
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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    • pp.169-173
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    • 2007
  • Slit-coater nozzle is one of core equipments of coating process in LCD panel manufactory. As a glass substrate size become bigger, a nozzle performance and a high-speed coating process are considered important issues. To design the optimal nozzle, the characteristics of fluid inside nozzle are studied using CFD (Computational Fluid Dynamics) method. Through research on design factors, we can know the coating uniformity influenced by lip length, cavity angle and gap size. The future work for this study is to find the factors in high-speed coating process and function between factors of design.

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직병렬 유도결합형 안테나를 이용한 대면적 플라즈마 소스 연구

  • 김봉주;이승걸;오범환;이일항;박세근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.201-204
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    • 2002
  • A large area inductively coupled plasma which is applicable to LCD processing is built with a modified single loop RF antenna. Combination of parallel and series paths of RF current through the antenna induces local enhancement of plasma density, which in turn provides uniform plasma density near the substrate. The plasma density distribution is measured and compared with that of the conventional single loop antenna. Aisotropic etching of photoresist is performed, and it is found that etch uniformity is improved by 3% from 15% of the conventional etcher over 350$\times$300mm glass substrates. Photoresist etching rate and uniformity can be further improved by applying a periodic weak axial magnetic fieid.

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Characteristics of Ag Etching using Inductively Coupled Halogen-based Plasmas

  • Park, Sang-Duk;Lee, Young-Joon;Kim, Sang-Gab;Choe, Hee-Hwan;Hong, Moon-Poe;Yeom, Geun-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.860-863
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    • 2002
  • In this study, Ag thin films deposited on LCD-grade glass were etched using inductively coupled fluorine-based plasmas and the effect of various $CF_4$-based gas mixtures on the Ag etching characteristics were studied. When $CF_4$-based gas mixtures were used with $N_2$, due to the very low vapor pressure of etch products, etch products remained on the substrate after the etching. However, when $CF_4$ used with Ar, residue-free Ag etching could be obtained due to the removal of etch product by sputtering by $Ar^+$ ions.

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Buffered Oxide Etch 세정에 의한 다결정 실리콘 TFT의 전기적 특성 개선 (Improvement of the Electrical Characteristics of a Polysilicon TFT Using Buffered Oxide Etch Cleaning)

  • 남영묵;배성찬;최시영
    • 대한전자공학회논문지SD
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    • 제41권8호
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    • pp.31-36
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    • 2004
  • 본 논문에서는 UV 처리와 BOE 세정을 이용하여 레이저 어닐링 전의 실리콘 표면에 자연 산화막을 제거하여 다결정 실리콘 TFT의 신뢰성을 향상시키는 방법을 제안하였다. 전처리 공정이 다결정 실리콘의 표면 거칠기에 미치는 영향을 AFM으로 측정하였으며, 다결정 실리콘 TFT의 전기적 특성인 스위칭 특성과 항복특성을 대형 유리기판의 위치와 전처리의 유무에 대해서 조사하였다.

Characteristics of Schottky Barrier Thin Film Transistors (SB-TFTs) with PtSi Source/Drain on glass substrate

  • 오준석;조원주
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.199-199
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    • 2010
  • 최근 평판 디스플레이 산업의 발전에 따라 능동행렬 액정 표시 소자 (AMOLED : Active Matrix Organic Liquid Crystral Display) 가 차세대 디스플레이 분야에서 각광을 받고있다. 기존의 TFT-LCD에 사용되는 a-Si:H는 균일도가 좋지만 전기적인 스트레스에 의해 쉽게 열화되고 낮은 이동도는 갖는 단점이 있으며, ELA (Eximer Laser Annealing) 결정화 poly-Si은 전기적인 특성은 좋지만 uniformity가 떨어지는 단점을 가지고 있어서 AMOLED 및 대면적 디스플레이에 적용하기 어렵다. 따라서 a-Si:H TFT보다 좋은 전기적인 특성을 보이며 ELA 결정화 poly-Si TFT보다 좋은 uniformity를 갖는 SPC (Solid Phase Crystallization) poly-Si TFT가 주목을 받고있다. 본 연구에서는 차세대 디스플레이 적용을 위해서 glass 기판위에 증착된 a-Si을 SPC 로 결정화 시킨 후 TFT를 제작하고 평가하였다. 또한 TFT 형성시에 저온공정을 실현하기 위해서 소스/드레인 영역에 실리사이드를 형성시켰다. 소자 제작시의 최고온도는 $500^{\circ}C$ 이하에서 공정을 진행하는 저온 공정을 실현하였다. Glass 기판위에 a-Si이 80 nm 증착된 기판을 퍼니스에서 24시간 동안 N2 분위기로 약 $600^{\circ}C$ 에서 결정화를 진행하였다. 노광공정을 통하여 Active 영역을 형성시키고 E-beam evaporator를 이용하여 약 70 nm 의 Pt를 증착시킨 후, 소스와 드레인 영역의 실리사이드 형성은 N2 분위기에서 $450^{\circ}C$, $500^{\circ}C$, $550^{\circ}C$에서 열처리를 통하여 형성하였다. 게이트 절연막은 스퍼터링을 이용하여 SiO2를 약 15 nm 의 두께로 증착하였다. 게이트 전극의 형성을 위하여 E-beam evaporator 을 이용하여 약 150 nm 두께의 알루미늄을 증착하고 노광공정을 통하여 게이트 영역을 형성 후 에 $450^{\circ}C$, H2/N2 분위기에서 약 30분 동안 forming gas annealing (FGA)을 실시하였다. 제작된 소자는 실리사이드 형성 온도에 따라서 각각 다른 특성을 보였으며 $450^{\circ}C$에서 실리사이드를 형성시킨 소자는 on currnet와 SS (Subthreshold Swing)이 가장 낮은것을 확인하였다. $500^{\circ}C$$550^{\circ}C$에서 실리사이드를 형성시킨 소자는 거의 동일한 on current와 SS값을 나타냈다. 이로써 glass 기판위의 SB-TFT 제작 시 실리사이드 형성의 최적온도는 $500^{\circ}C$로 생각되어 진다. 위의 결과를 토대로 본 연구에서는 SPC 결정화 방법을 이용하여 SB-TFT를 성공적으로 제작 및 평가하였고, 차세대 디스플레이에 적용할 경우 우수한 특성이 기대된다.

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What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • 백충렬
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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Effect of the substrate temperature on the properties of transparent conductive IZTO films prepared by pulsed DC magnetron sputtering

  • Ko, Yoon-Duk;Kim, Joo-Yeob;Joung, Hong-Chan;Son, Dong-Jin;Choi, Byung-Hyun;Kim, Young-Sung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.167-167
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    • 2010
  • Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

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