• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(2)
• /
• pp.942-948
• /
• 2003

This paper about the small electron beam irradiator for solar cell's efficiency. Many things are studied by method to increase conversion efficiency of solar cell. We selected electron beam by method for conversion efficiency of solar cell. Energy bands of this electron beam irradiator is 80keV(max.). And, solar cells that apply in this paper are crystal Si. Average efficiency of solar cell that applies in this experiment is 10$\%$. This system manufactured low energy electron beam irradiator. And, electron beam irradiation to solar cell in vacuum chamber of this irradiator. Irradiation area is 20*20 [mm2] by 40[keV].

• 열처리공학회지
• /
• 제13권4호
• /
• pp.259-264
• /
• 2000

In this study, we quantitatively measure the ion ranges of arsenic with energies ranging from 10 KeV to 100 KeV, implanted at $3^{\circ}$, $9^{\circ}$ $15^{\circ}$ the (100) plane, and the damage created during ion implantation. To obtain detailed information of ion range and damage distributions in low energy region where elastic collisions dominate the slowing down process, molecular dynamics computer simulation was performed and compared to the existing results. The effects of implant energy and degree on damage generation are present. The number of vacancy were calculated from the deposited energy using Kinchin-Pease equation. In the energy range 10 keV-100 keV, simulations show that the number of Frenckel pairs produced by As-ion bimbardment is 9 and incident angle dependence of the vacancy was the same but defects were distributed at different depth.

• 한국산학기술학회논문지
• /
• 제10권11호
• /
• pp.3296-3301
• /
• 2009

콘 관입시험 결과는 현장의 비배수전단강도 결정을 위하여 광범위하게 활용되고 있으며, 이를 위하여 지역별로 적절한 경험적 콘 지수($N_{kt}$, $N_{ke}$, $N_{{\Delta}u}$)의 결정이 필요하다. 본 연구에서는 창원 북면 지역 지반에 대하여 일축 압축시험 및 비압밀비배수 삼축압축시험 결과를 이용하여 콘 지수를 산정하였으며, 소성지수 및 간극수압비와의 관계를 고찰하였다. $N_{kt}$, $N_{ke}$, $N_{{\Delta}u}$은 각각 8~40, 7~37, 1~26으로 산정되었으며, 간극수압비와 비교적 큰 연관성이 있음이 고찰되었다.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
• /
• 한국우주과학회 2009년도 한국우주과학회보 제18권2호
• /
• pp.43.2-43.2
• /
• 2009

Electron microbursts are the intense electron precipitation which durations are less than one second. We measured the energy spectra of the microbursts from 170 keV to 340 keV with solid state detectors aboard the low-altitude (680km), polar-orbiting Korean STSAT-1 (Science and Technology SATellite). The data showed that the loss cone at these energies is empty except when microbursts abruptly appear and fill the loss cone in less than 50 msec. This fast loss cone filling requires pitch angle diffusion coefficients larger than ~ 10-2rad2/sec, while ~10-5 rad2/sec was proposed by a wave particle interaction theory. We recalculated the diffusion coefficient, and reviewed of electron microburst generation mechanism with test particle simulations. This simulation successfully explained how chorus waves make pitch angle diffusion within such short period. From considering the resonance condition between wave and electrons, we also showed ~ 100 keV electrons could be easily aligned to the magnetic field, while ~ 1MeV electrons filled loss cone partially. This consideration explained why precipitating microbursts have lower e-folding energy than that of quasi-trapped electrons, and supports the theory that relativistic electron microbursts that have been observed by satellite in-situ measurement have same origin with ~100 keV electron microbursts that have been usually observed by balloon experiments.

• Journal of Radiation Protection and Research
• /
• 제42권1호
• /
• pp.26-32
• /
• 2017

Background: Ionizing radiation is known to be harmful to human health. The shielding of ionizing radiation depends on the attenuation which can be achieved by three main rules, i.e. time, distance and absorbing material. Materials and Methods: The mass attenuation coefficient, linear attenuation coefficient, Half Value Layer (HVL) and Tenth Value Layer (TVL) of X-rays (32 keV, 74 keV) and gamma rays (662 keV) are measured in Barium compounds. Results and Discussion: The measured values agree well with the theory. The effective atomic numbers ($Z_{eff}$) and electron density (Ne) of Barium compounds have been computed in the wide energy region 1 keV to 100 GeV using an accurate database of photon-interaction cross sections and the WinXCom program. Conclusion: The mass attenuation coefficient and linear attenuation coefficient for $BaCO_3$ is higher than the $BaCl_2$, $Ba(No_3)_2$ and BaSO4. HVL, TVL and mean free path are lower for $BaCO_3$ than the $BaCl_2$, $Ba(No_3)_2$ and $BaSO_4$. Among the studied barium compounds, $BaCO_3$ is best material for x-ray and gamma shielding.

• Nuclear Engineering and Technology
• /
• 제36권1호
• /
• pp.47-52
• /
• 2004

Recently, a new sintered pellet-type LiF:Mg,Cu,Na,Si TL detector which has a high sensitivity and good reusability, named KLT-300(KAERI LiF:Mg,Cu,Na,Si TL detector), was developed by the variation of the dopants concentrations and the parameters of the preparation procedure at KAERI (Korea Atomic Energy Research Institute). In this study, the thermoluminescent characteristics of the newly developed TL detectors were investigated. The sensitivity of the TL detector was compared with that of the TLD-100 by light integration. The dose linearity of the detector was tested from $10^{-6}$ Gy up to 30 Gy. The dose response was very linear up to 10 Gy and a sublinear response was observed at higher doses. The energy response of the detector was studied for photon energies from 20 keV to 662 keV. The result shows that a maximum response of 1.004 at 53 keV and a minimum response of 0.825 at 20 keV were observed. The reproducibility study for the TL detector was also carried out. The coefficients of variation for each detector separately did not exceed 0.016, and for all the 10 detectors collectively was 0.0054. Lower limit of detection for the detector was investigated at 70 nGy by the Harshaw 4500 TLD Reader and the residual signal of the TL detector was found to be $0.57\%$.

• 한국진공학회지
• /
• 제12권S1호
• /
• pp.28-32
• /
• 2003

Both $LiNbO_3$ and $KTiOPO_4$ samples were implanted with 350 keY $H^+$ and $He^+$ ions at different doses ranging from $1 ${\times}$\times10^{16}$ to of $5 ${\times}$\times10^{16}$ ions/$\textrm{cm}^2$. Single and multi-energy implantations were performed at room temperature. Mono-mode or a few modes in both $LiNbO_3$ and $KTiOPO_4$ waveguides were observed. The effect of temperature on the refractive index profiles of $LiNbO_3$ and $KTiOPO_4$ waveguids was studied. The temperature covered from room temperature, $200^{\circ}C$, 194.5 K (dry ice) and 77K (liquid nitrogen). Different mechanisms are needed to interpret the observed behavior. A n, increased mono-mode $LiNbO_3$ waveguide was formed by multi-energy keV $He^+$ ions.

• 한국진공학회지
• /
• 제12권S1호
• /
• pp.92-94
• /
• 2003

The sputtering yield change of an amorphous Si layer on Si(100) was measured quantitatively for 0.5 keV $O_2^{+}$ and $Ar^{+}$ ion bombardment with in suit MEIS. In the case of 0.5 keV $O_2^{+}$ ion bombardment, at the initial stage of sputtering before surface oxidation, the sputtering yield of Si was 1.4 (Si atoms/$O_2^{+}$) and then decreased down to 0.06 at the ion dose of $3\times10^{16}O_2\;^{+}\textrm{/cm}^2$. In the case of 0.5 keV $Ar^{+}$ ion bombardment, the sputtering yield of Si for the surface normal incidence was 0.56 at the ion dose of 2.5 ${\times}$ 10$^{15}$ $Ar^{+}\textrm{cm}^2$, and rapidly saturated to 1.2 at dose of $7.5\times10^{15}Ar^+\textrm{cm}^2$. For the incidence angle of 80 from surface normal, the sputtering yield of Si was saturated to about 1.4 at the initial stage of sputtering. The surface transient effects, caused by change in sputtering yield at the initial stage of sputtering can be negligible when 0.5 keV $Ar^{+}$ ion at extremely grazing angle was used for sputter depth profiling.g.

• 한국진공학회지
• /
• 제4권S2호
• /
• pp.95-99
• /
• 1995

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.

• Nuclear Engineering and Technology
• /
• 제4권2호
• /
• pp.116-131
• /
• 1972

Li$^{7}$ (p, n) Be$^{7}$ 원자핵반응에서 Li target의 두께와 입사양자의 에너지를 적절히 선정하므로써 1-n sec 파동 Van de Graaff 가속도로부터 keV 영역에서의 연속중성자spectrum을 발생시키고 92% 농축된 5mm 두께의 $B^{10}$ 판과 4개의 4＂$\times$3＂ NaI (T1) 발광체로 이루어진 속중성자검출기를 이용 속중성자 비행시간법에 의한 중성자spectrometer 를 제작하였다. 장치의 에너지 분해능은 50 keV에서 0.3%보다 양호하며 신호대잡음비도 개량되었다. 이를 이용하여 몇가지 분석된 단일동위원소의 전단면적을 측정하고 R-matrix 전자계산 code로 분석하였다. 각 공명에 따르는 스핀식와 공명인수들을 찾아내었다.