• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.187-191
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• 2005

A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.

• 한국유기농업학회지
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• 제23권1호
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• pp.103-112
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• 2015

본 시험은 GA로 처리된 '원황' 배(Pyrus pyrifolia Nakai)를 수확시기를 달리하였을 때 과실품질, 과심갈변, 그리고 기호도가 어떠한 영향을 받는지와 이에 적절한 수확시기를 규명하고자 수행되었다. 시험 처리는 만개 후 110, 115, 120, 125, 130일에 수확한 것을 포함하였다. 수확시기가 지연될수록 과중과 당도는 증가한 반면에 과육경도와 산도 그리고 전분함량은 감소하였다. 상온보관 21일 동안 만개 후 130일에 수확된 과실의 과육경도는 크게 감소하였고 과심갈변 증상은 심화된 반면에 115일에 수확된 과실의 경도와 과심갈변의 감소는 천천히 진행되었다. 수확시기의 지연은 GA 처리와 상관없이 과실의 기호도를 감소시켰다. GA 처리과의 기호도 감소는 수확시기에 관계없이 GA 무처리 과실 보다 일찍 관찰되었다. 만개 후 120일에 수확을 하는 것이 GA로 처리된 과실의 품질 유지와 과심갈변 억제를 위하여 효과적인 수확시기로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.463-465
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• 2005

The $ZnGa_2O_4$:Mn phosphor was synthesized through solid-state reactions at the various molar ratio of Mn from 0.002 % to 0.01 %. Structural and optical properties of the $ZnGa_2O_4$:Mn phosphor was investigated by using X-ray diffraction (XRD), and cathodoluminescence (CL) measurements. The XRD patterns show that the Mn-doped $ZnGa_2O_4$ has a (311) main peak and a spinel phase. Also the emission wavelength shifts from 420 to 510 nm in comparison with $ZnGa_2O_4$ when Mn is doped in $ZnGa_2O_4$. These results indicate that $ZnGa_2O_4$:Mn phosphors hold promise for potential applications in field-emission display devices with high brightness operating in green spectral regions.

• 한국진공학회지
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• 제14권4호
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• pp.222-228
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• 2005

2단계 성장법으로 c-plane 사파이어 단결정 기판 위에 metalorganic chemical vapor deposition(MOCVD)법으로 undoped GaN 에피층을 성장시켰다. 고온 성장시 성장 온도 변화가 undoped GaN 에피층의 표면형상과 거칠기, 구조적 결정성, 광학적 성질, 전기적 성질에 미치는 영향을 연구하였다. 수평형 MOCVD 장치를 이용해 압력 300 Torr 저압에서 성장시켰으며, 저온 핵생성층 성장조건은 $500^{\circ}C$로 고정시키고, 2단계 성장 온도를 $850\~1050^{\circ}C$범위로 변화시켰다. 형성된 undoped GaN 에피층을 원자력현미경, 고분해능 X-선회절장치, 광발광측정, 홀 효과 측정 장치 등을 이용하여 분석, 고찰하였다.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2017년도 9th Asian Crop Science Association conference
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• pp.129-129
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• 2017

The first key point to the successful pollination and fertilization in plants is the pollen pistil interaction, referring to the cellular and molecular levels, which mainly play active roles in limiting gene flow among maize populations and between maize and teosinte. This study was carried out to identify proteins and investigate the mechanism of gametophytic factors using protein analysis. W22 (ga1); which didn't carry a gametophytic factor and W22 (Ga1), a near iso-genic line were used for the proteome investigation. SDS-PAGE was executed to investigate proteins in the pollen and pistil of W22 (ga1) and W22 (Ga1). A total of 44 differentially expressed proteins were identified in the pollen and pistil on SDS-PAGE using LTQ-FTICR MS. Among the 44 proteins, a total of 24 proteins were identified in the pollen of W22 (ga1) and W22 (Ga1) whereas 20 differentially expressed proteins were identified from the pistil of W22 (Ga) and W22 (Ga1). However, in pollen, 2 proteins were identified only in the W22 (ga1) and 12 proteins only in the W22 (Ga1) whereas 10 proteins were confirmed from the both of W22 (ga1) and W22 (Ga1). In contrary, 10 proteins were appeared only in the pistil of W22 (ga1) and 7 proteins from W22 (Ga1) while 3 proteins confirmed in the both of W22 (ga1) and W22 (Ga1). Moreover, the identified proteins were generally involved in hydrolase activity, nucleic acid binding and nucleotide binding. These results help to reveal the mechanism of gametophytic factors and provide a valuable clue for the pollen and pistil research in maize. In addition, it might provide a comprehensive insight on the proteins that were involved in the regulation of pollen-pistil interaction.

• Current Photovoltaic Research
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• 제1권1호
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• pp.38-43
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• 2013

$Cu(In,Ga)_3Se_5$ is a candidate material for the top cell of $Cu(In,Ga)Se_2$ tandem cells. This phase is often found at the surface of the $Cu(In,Ga)Se_2$ film during $Cu(In,Ga)Se_2$ cell fabrication, and plays a positive role in $Cu(In,Ga)Se_2$ cell performance. However, the exact properties of the $Cu(In,Ga)_3Se_5$ film have not been extensively studied yet. In this work, $Cu(In,Ga)_3Se_5$ films were fabricated on Mo-coated soda-lime glass substrates by a three-stage co-evaporation process. The Cu content in the film was controlled by varying the deposition time of each stage. X-ray diffraction and Raman spectroscopy analyses showed that, even though the stoichiometric Cu/(In+Ga) ratio is 0.25, $Cu(In,Ga)_3Se_5$ is easily formed in a wide range of Cu content as long as the Cu/(In+Ga) ratio is held below 0.5. The optical band gap of $Cu_{0.3}(In_{0.65}Ga_{0.35})_3Se_5$ composition was found to be 1.35eV. As the Cu/(In+Ga) ratio was decreased further below 0.5, the grain size became smaller and the band gap increased. Unlike the $Cu(In,Ga)Se_2$ solar cell, an external supply of Na with $Na_2S$ deposition further increased the cell efficiency of the $Cu(In,Ga)_3Se_5$ solar cell, indicating that more Na is necessary, in addition to the Na supply from the soda lime glass, to suppress deep level defects in the $Cu(In,Ga)_3Se_5$ film. The cell efficiency of $CdS/Cu(In,Ga)_3Se_5$ was improved from 8.8 to 11.2% by incorporating Na with $Na_2S$ deposition on the CIGS film. The fill factor was significantly improved by the Na incorporation, due to a decrease of deep-level defects.

• 한국멀티미디어학회:학술대회논문집
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• 한국멀티미디어학회 2012년도 춘계학술발표대회논문집
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• pp.454-454
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• 2012

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1996년도 한국자동제어학술회의논문집(국내학술편); 포항공과대학교, 포항; 24-26 Oct. 1996
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• pp.331-334
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• 1996

It is a well-known problem that the adaptive control has a poor transient response. In order to improve this problem, the scheme that model-reference adaptive control (MRAC) uses the genetic algorithm (GA) in the search for parameters is proposed. Use genetic algorithm (GA) in the searching for controller's parameters set and conventional gradient method for fine tuning. And show the reduction of the oscillations in transient response comparing with the conventional MRAC.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.518-520
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• 1987

The semiconductor-metal-semiconductor structure is considered to be promising for high speed electronic devices. To realize this, the selective LPE and the proper design of epitaxial mask were adopted. Enhanced As diffusion made it possible to grow GaAs over W on GaAs. Buried W Schottky diode was fabricated and the rectifying I-Y characteristics were obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1805-1806
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• 2007

Silicon nitride (SiN) 박막을 플라즈마 응용화학기상법을 이용하여 증착하였다. SiN박막의 전하밀도는 일반화된 회귀 신경망 (GRNN)을 이용하여 모델링하였다. PECVD 공정은 Box Wilson 실험계획표를 이용하여 수행하였다. GRNN 모델의 예측수행은 유전자 알고리즘 (GA)을 이용하여 최적화하였다. 최적화한 GA-GRNN 모델은 종래의 GRNN 모델과 비교하여, 약55%정도의 예측성능의 향상을 보였다.