• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.6
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• pp.451-458
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• 2020

In this study, a trade-off analysis of a power conversion system (PCS) is performed in accordance with a power semiconductor device to establish the suitable operating frequency range for the anyplace induction heating system. A resonant network is designed under each operating frequency condition to compare and analyze the PCS losses depending on the power semiconductor device. On the basis of the simulation results, the PCS losses and frequency condition are calculated. The calculated results are then used for a trade-off analysis between Si-MOSFET and GaN-HEMT based on PCS. The suitable operating frequency range is determined, and the validity of the analysis results is verified by the experiment results.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.36-41
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• 2006

In this paper, the time evolution of undoped GaN epilayers on a low-temperature GaN buffer layer grown on c-plane sapphire at a low pressure of 300 Torr was studied via a two-step growth condition in a horizontal MOCVD reactor. As a function of the growth time at a high-temperature, the surface morphology, structural quality, and optical and electrical properties were investigated using atomic force microscopy, high-resolution x-ray diffraction, photoluminescence, and Hall effect measurement, respectively. The root-mean-square roughness showed a drastic decrease after a certain period of surface roughening probably due to the initial island growth. The surface morphology also showed the island coalescence and the subsequent suppression of three-dimensional island nucleation. The structural quality of the GaN epilayer was improved with increasing growth time considering the symmetrical (002) and asymmetrical (102) rocking curves. The variations of room-temperature photoluminescence, background carrier concentration, and Hall mobility were measured and discussed.

• ETRI Journal
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• v.18 no.4
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• pp.315-338
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• 1997

We extend our previous theoretical analysis of electronic and optical properties of p-type quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of the normal incidence absorption and photo current at photon wavelengths of 2 - 3 ${\mu}m$, which was observed in addition to the absorption around 8 ${\mu}m$ by a recent experimental investigation with heavily doped p-type GaAs/AlGaAs multi-quantum well (MQW) structures. In the theoretical analysis, the Hartree and exchange-correlation many-body interactions are taken into account within one-particle local density approximation, and it is shown that normal incidence absorption occurs in two wavelength regions over the transition energy range higher than barrier height for p-type GaAs/AlGaAs superlattices with well doping of $2{\times}10^{19}\;cm^{-3}$; one region has broad absorption peaks with coefficients of about 5000 $cm^{-1}$ around 8 ${\mu}m$, and the other has two rather sharp peaks at 2.7 ${\mu}m$ and 3.4 ${\mu}m$ with 1800 $cm^{-1}$ and 1300 $cm^{-1}$, respectively. The result indicates that the theory explains the experimental observation well, as the theoretical and experimental results are in close agreement in general absorption features.

• The Journal of Korean Physical Therapy
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• v.13 no.3
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• pp.603-611
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• 2001

This study was performed. using EGF, to observated the effect of GaAIAs laser on wound model induced designedly in lumbar region. The results of this study were as following: 1. In expression of EGF which used marker of wound healing, laser irradiating group made EGF to more induce significantly than laser non-irradiating group at 3 days. 2. EGF immunoreactivity in epidermis were increased markedly 3 days after wound, and increased gradually from 1 day to 2 days in wound which is laser irradiation. Therefore, EGF immunoreactivity which increased after wound with GaAIAs laser irradiation indicate that GaAIAs laser have wound healing effect. This study also can become a part of scientific evidence on electrotherapy through measuring quantitively effects of GaAIAs laser in wound

• YAKHAK HOEJI
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• v.42 no.6
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• pp.583-588
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• 1998

These experiments were investigated effects of the cell death of glycyrrhetinic acid (GA) on transplanted-L1210 cells in BALB/c mice. The GA suppressed the proliferation of L121 0 cells in vivo and in vitro system. The administration of GA induced apoptosis of transplanted-L1210 cells via the reduction of mitochondrial transmembrane potential in mice. The GA enhanced the production of nitric oxidation in peritoneal macrophages obtained from L1210 cells-transplanted mice. The apoptosis of L1210 cells were induced by co-culture of the macrophages obtained from GA administered mice and L1210 cells in vitro, and was partly inhibited by the treatment of L-NMMA. These results suggest that GA induces the cytotoxicity and the apoptosis of transplanted-L1210 cells via the production of nitric oxide in peritoneal macrophages.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.141-144
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• 2007

We demonstrated 4 inch QVGA AMOLED display driven by GaInZnO TFT. The structure of GaInZnO TFT is back channel etch (BCE) which is conventional structure for a-Si TFT. The electron mobility of GaInZnO TFT is $2.6\;cm^2/Vs$ and Vt is 3.8V. It is thought that GaInZnO TFT could be backplane for AMOLED TV.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.271-275
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• 2011

The role and effect of Sb surfactant on structure and properties of p type gallium nitride (GaN) epilayers have been investigated. It was found that there was a increase of hole concentration with Sb surfactant, compared to typical Mg-doped p-GaN. The structural and optical quality of p-GaN epilayers were accessed by x-ray diffraction, photoluminescence and atomic force microscope measurements. The results clearly show that the increase in hole concentration with Sb surfactant can be resulted from decrease in the dislocations and nitrogen point defects.

• Journal of Radiation Protection and Research
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• v.28 no.1
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• pp.25-33
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• 2003

The automatic system for $^{67}Ga$ production using for the diagnosis of malignant tumor has been developed. A solvent extraction and an ion exchange chromatography were used for the separation $^{67}Ga$ from the irradiated enriched $^{68}Zn$. This system consisted of a solvent separation unit which was composed of micro conductivity cells, air supply tubes, solvent transfer tubes, solenoid valves and glasses, a PLC based controller and a PMU user interface unit for automation. The radiation exposure to the workers and the production time can both be reduced by employing this system during the $^{67}Ga$ production phase. After all, the mass production of $^{67}Ga$ with high efficiency was possible.

• Journal of Life Science
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• v.6 no.1
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• pp.40-47
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• 1996

Experiments were conducted to determine the effects of plant growth regulators on in vitro flowering and micropropagation of Gentiana scabra Bunge which had been used the cut flower, pot flower ornamental and medicinal plants. Flower bud formation was affected by GA$_{3}$ and kinetin. The optimum concentrations for flower bud formation was observed at 0.5 mg/l kinetin and GA$_{3}$ , while kinetin was favorable. More flowerings result from the interaction of GA$_{3}$ and kinetin at in a combination of 0.1 mg/l kinetin + o.1 mg/l GA$_{3}$, but the optimum concentration of GA$_{3}$ and kinetin was decreased. All concentrations of kinetin with 0.1 mg/l GA$_{3}$ or O mg/l GA$_{3}$ + 0.5 mg/l kientin reduced t (weeks needed for 50% plantlets). The plantlet growth was affected by GA$_{3}$ and kinetin during plantlet culture. More lateral shots and better shoot length per plantlet were obtained as GA$_{3}$ and kinetin concentration were increased up to 1.0 mg/l. The number of per plantlet was greater increased in MS medium containing GA$_{3}$ than kinetin. Interaction was exhibited at lower concentration with 0.5mg/l GA$_{3}$ and kinetin, but not in higher concentration with 1.0 mg/l GA$_{3}$ and kinetin. Higher pod diameter increased seed germination, while lower pod diameter was obtained from abnormal plantlet. MA medium containing 0.5 mg/l GA$_{3}$ significantly increased germination without regard to pod diameter.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.