• Sijohaknonchong
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• v.21
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• pp.241-269
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• 2004

The purpose of this dissertation is to examine background of creation, composing method, and character of contents. was created by Kwon, Seop to reconfirm moral range of the Kiho-scholarship school and admire Kwon. Sang-ha (Kwon. Seop's uncle) through transmission of Kugok-ga when a custom handed down by Kwon, Sang-ha waned. This work, therefore, was composed of recollecting method describing each place of superb view relating to trace of life of Kwon, Sang-ha. In this work, the moralistic life of Kwon, Sang-ha don't appear directly. Hwangkangkugok, a fairyland where Kwon, Sang-ha lived in retirement. proves the moralistic life of Kwon, Sang-ha indirectly by describing his life as hermitian taste. Through this composing method and recognizant attitude, We know that was created for K won, Sang-ha, but it reveals Kwon, Seop' thought in life and it can be placed on prolongation with his work world.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.554-562
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• 2015

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.79-82
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• 1989

We studied the epitaxial growth of GaAs/GaAs and GaAs/Si by Laser CVD with 193nm ArF pulsed excimer laser. The source gases of TMGa and AsC13 or TMGa-TMAs adducts are mixed with H2, and photolyzed above the substrate which is heated up to around 300$^{\circ}C$. Then the photolyzed atoms are deposited on the silicon or GaAs substrate. The deposited films are analyzed with ESKA depth profiling and X-ray differaction method, which shows that the films on Si and GaAs are stoichiometric and crystalized at such a low temperature. We show a clear evidence for the epitaxial growth of GaAs on Si or GaAs on GaAs at low temperature by excimer laser CVD.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.34-37
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• 1987

Theoretical calculations are presented for analying lateral modes of stripe geometry lasers. The solution technique affords a matching between the fields of the active layer and those of the surrounding passive layer. The fields are written as a liner combination of Hermite-Gaussian function. Therefore fields have been described with a single H - G function. The lowest-order mode spreading is calculated and related to the gain distribution.

• Electronics and Telecommunications Trends
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• v.29 no.6
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• pp.1-13
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• 2014

GaN(Gallium Nitride)는 3.4eV의 넓은 에너지 갭으로 인하여 고전압에서 동작이 가능하고, 분극전하를 이용한 캐리어 농도가 높아 높은 전류밀도와 전력밀도를 얻을 수 있으며, 높은 전자 이동도와 포화 속도로부터 고속 동작이 가능하여 고주파 고출력 고효율 소형의 전력증폭기 소자의 재료로 적합하다. 본고에서는 민수 및 군수 겸용 Ku-대역 및 Ka-대역 GaN 고출력 전력증폭기(SSPA: Solid-State Power Amplifier)와 관련된 GaN 전력증폭 소자, GaN 전력증폭기 MMIC(Microwave Monolithic Integrated Circuit), 내부정합 패키지형 GaN 전력증폭기 및 GaN SSPA에 대하여, 국내외 특허 기술동향과 연구개발 기술동향을 중심으로 고찰하고자 한다. 국외의 GaN 고주파 고출력 전력증폭기 기술의 연구동향이나 특허동향을 심층분석하여 연구개발에 활용하고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• Proceedings of the Korean Society of Crop Science Conference
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• 1992.05a
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• pp.50-51
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• 1992

• Proceedings of the Korean Society of Crop Science Conference
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• 1992.05a
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• pp.52-53
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• 1992

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• Journal of computational fluids engineering
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• v.6 no.3
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• pp.10-18
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• 2001

Genetic Algorithm(GA) is applied to aerodynamic shape optimization and demonstrated its merits in global searching ability and the independency of differentiability. However, applications of GA are limited due to slow convergence rate, premature termination, and high computing costs. The present aerodynamic designs such as wing shape optimizations using GA have seldom been applied because of high computing costs. This paper has two objects; improvement of the efficiency of GA and application of GA into aerodynamic shape optimization for 2D and 3D wings. The study indicates that GA can be applied to aerodynamic design and its performance is comparable to traditional design methods.