• 제목/요약/키워드: KOH solution

검색결과 502건 처리시간 0.034초

알칼리 수전해를 위한 상용 음이온교환막에 관한 연구 (Study on Commercially Available Anion Exchange Membrane for Alkaline Water Eectrolysis)

  • 박주왕;유철휘;황갑진
    • 멤브레인
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    • 제31권4호
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    • pp.275-281
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    • 2021
  • 알칼리 수전해용 격막으로 사용가능성을 평가하기 위해 5종류의 상용 음이온교환막의 열적안정성, 이온전도도, 내구성을 평가하였다. TGA (thermo-gravimetric analysis)로 분석한 열적안정성은 FAAM-PK-75와 FAAM-40 막이 다른 3종류의 AEM, AHO, AHA 막과 비교하여 좋은 성능을 보였다. 25℃와 80℃, 7 M KOH 수용액에서의 이온전도도는 AEM막이 다른 막과 비교하여 약 4~17배 높은 값을 보였다. 25℃, 7 M KOH 수용액에서 측정한 내구성은 FAAM-PK-75막이 다른 막과 비교하여 안정하였다.

$SO_2/KOH$ 촉매에 의한 2-Pyrrolidone의 음이온 중합에 관한 연구 (Anionic Polymerization of 2-Pyrrolidone by $SO_2/KOH$ Catalyst)

  • 허동섭;이정근
    • Elastomers and Composites
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    • 제14권4호
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    • pp.231-252
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    • 1979
  • Polymerization of 2-pyrrolidone was carried out through anionic mechanism using $SO_2/KOH$ as catalyst. The effects of KOH concentration, $SO_2/KOH$ mole ratio and temperature on polymerization were investigated. The conversion and viscosity of polymers were measured at various polymerization conditions. It was observed that as the concentration of KOH was increased, equilibrium conversion was also increased. It was, however, found that after the concentration of KOH was reached above 8 mole percent, the equilibrium conversion was decreased. The highest rate of polymerization and maximum conversion were obtained when $SO_2/KOH$ mole ratio was around 0.5. It was also found that the rate of polymerization and the equilibrium conversion were higher at $50^{\circ}C$. than at $30^{\circ}C$. but the viscosity of polymer solution at $50^{\circ}C$. was not so high as expected. The rate constant, $K_p$ of polymerization, was determined by least square method: the value of $K_p$ was observed as 16 liter/mole hour at $50^{\circ}C$. and 2.6 liter/mole hour at $30^{\circ}C$., respectively. The mechanism of polymerization was also discussed.

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Influence of KOH Solution on the Passivation of Al2O3 Grown by Atomic Layer Depostion on Silicon Solar Cell

  • 조영준;장효식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.299.2-299.2
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    • 2013
  • We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

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KOH를 이용한 Si 식각에서 IPA와 Ethanol을 사용한 경우의 표면 비교 (Morphology of Si Etching Structure Using KOH Solution with IPA and Ethanol)

  • 이귀덕;노용한
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.123-124
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    • 2006
  • 본 연구에서는 KOH 용액을 사용한 Si 습식 이방성 식각실험 진행 후, 나타나는 표면의 거친 현상을 완화하는 데에 중점을 두고 연구를 진행하였다. 이를 위해 $SiO_2$ 웨이퍼 위에 Photo-lithography 공정으로 형성시킨 PMER 패턴을 Mask로 사용하여 HF 용액으로 $SiO_2$를 식각시켰으며, 형성된 $SiO_2$를 Mask로 사용하여 KOH 용액으로 Si을 식각시켰다. 이 때, KOH와 혼합하는 용액으로 IPA와 Ethan이을 각각 사용하여 실험을 진행하였으며, ESEM을 이용하여 표면을 비교하였다.

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$KTP(KTiOPO_4)$ 단결정 육성 및 물성 연구 (제2보) (A study on the growth and properties of KTP single crystals (II))

  • 이명준;차용원;오근호;김판채
    • 한국결정성장학회지
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    • 제4권3호
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    • pp.223-229
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    • 1994
  • $KTP(KTiOPO_4)$ 단결정을 KOH 용액 중에서 수열적으로 육성하였다. 그리고 육성결 정에 대하여 물성 및 Raman spectra를 조사하였다. KTP 단결정의 육서에 있어 KOH와 KF용 액이 효과적인 수열용매이었다. 본 연구에서는 $500^{\circ}C$의 9몰 KOH 용액 중에서 수열육성시킨 KTP 단결정을 갖고 물성조사를 하였으며 그 결과는 다음과 같다. 즉, 격자정수: a = 1.281 nm, c=1.058nm, 밀도: $2.94 g/cm^3$, Vickers 경도: $562kg/cm^2$, 굴절율: $n_e=1.740$, $n_e= 1.747.$이었다. 그리고 수열 육성 KTP 단결정의 Raman spectra를 상온, 상압하에서 조사한 결과 $A_1$ mode는 고온 용액법의 KTP 단결정과 동일 하였으나 $B_2$ mode의 거동은 약간 다르게 관측되었다.

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염기용액을 이용한 태양전지용 실리콘 기판의 절삭손상층 식각 특성 (The Saw Damage Etching Characteristics of Silicon Wafer for Solar Cell with Alkaline Solutions)

  • 권순우;이종협;윤세왕;김동환
    • 신재생에너지
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    • 제5권1호
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    • pp.26-31
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    • 2009
  • The surface etching characteristics of single crystalline silicon wafer were investigated using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). The saw damage layer was removed after 10min by KOH 45wt% solution at $80^{\circ}C$. The wafer etched at high temperature ($90^{\circ}C$) and in low concentration (4wt%) of TMAH solution showed an increased etch rate of silicon wafer and wavy patterns on the surface. Especially, pyramidal textures were formed in 4wt% TMAH solution without alcohol additives.

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알칼리 수전해용 전극에 관한 연구 (Study on the Electrode Characteristics for the Alkaline Water Electrolysis)

  • 최호상;임두순;유철휘;김재철;황갑진
    • 한국수소및신에너지학회논문집
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    • 제23권2호
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    • pp.117-124
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    • 2012
  • Alkaline electrolysis needs the electrode having a low overvoltage and good corrosion resistance in alkaline solution such as KOH and NaOH, for the oxygen and hydrogen production. The commercial materials such as SUS(stainless steel)-316, Ni and NiFe were evaluated for the electrode in alkaline electrolysis. The test solution for the alkaline electrolysis used 1~9M NaOH and 1~9M KOH. The voltage increased with an increase of current density in each solution. As for the 15wt.% (about 5M) NaOH, the voltage of the tested electrode under the current density of 1.8A/$cm^2$ showed the almost same value. The voltage over the current density of 1.8A/$cm^2$ deceased in the order: Ni${\fallingdotseq}$NiFe$cm^2$ showed the almost same value. The voltage over the current density of 1.8A/$cm^2$ deceased in the order: NiFe${\fallingdotseq}$SUS-316. From the results, it was estimated that NiFe and Ni was suitable as the electrode for the alkaline water electrolysis using NaOH and KOH electrolyte.

Synthesis of Activated Carbon from Rice Husk Using Microwave Heating Induced KOH Activation

  • Nguyen, Tuan Dung;Moon, Jung-In;Song, Jeong-Hwan;Kim, Taik-Nam
    • 한국재료학회지
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    • 제22권6호
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    • pp.321-327
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    • 2012
  • The production of functional activated carbon materials starting from inexpensive natural precursors using environmentally friendly and economically effective processes has attracted much attention in the areas of material science and technology. In particular, the use of plant biomass to produce functional carbonaceous materials has attracted a great deal of attention in various aspects. In this study the preparation of activated carbon has been attempted from rice husks via a chemical activation-assisted microwave system. The rice husks were milled via attrition milling with aluminum balls, and then carbonized under purified $N_2$. The operational parameters including the activation agents, chemical impregnation weight ratio of the calcined rice husk to KOH (1:1, 1:2 and 1:4), microwave power heating within irradiation time (3-5 min), and the second activation process on the adsorption capability were investigated. Experimental results were investigated using XRD, FT-IR, and SEM. It was found that the BET surface area of activated carbons irrespective of the activation agent resulted in surface area. The activated carbons prepared by microwave heating with an activation process have higher surface area and larger average pore size than those prepared by activation without microwave heating when the ratio with KOH solution was the same. The activation time using microwave heating and the chemical impregnation ratio with KOH solution were varied to determine the optimal method for obtaining high surface area activated carbon (1505 $m^2$/g).

핵연료피복관용 Zr 합금의 부식특성 및 산화막 미세구조 (Corrosion Characteristics and Oxide Microstructure of Zirconium Alloys for Nuclear Fuel Cladding)

  • 정용환;백종혁;김선재;김경호;최병권;정연호
    • 한국재료학회지
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    • 제8권4호
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    • pp.368-374
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    • 1998
  • Zr합금의 부식거동을 평가하기 위하여 여러 가지 1족 알칼리 수산화물 용액 (LiOH, NaOH, KOH, RbOH, CsOH)에서 autoclave를 이용하여 300일까지 부식시험을 실시하였다. 산화막 특성은 TEM을 이용하여 천이전과 천이후에 동일 산화막두께를 갖도록 준비된 부식시편에 대해 수행되었다. 실험결과를 고려할 때 금속이온은 부식과정에서 매우 중요한 역할을 하는 것으로 사료된다. 즉 $Li^+$$Zr^{4+}$ 치환하여 산소농도는 증가하고 부식은 가속되는데 산화막 내부의 barrier layer에서 $Li^-$치환이 부식을 제어하는 것으로 판단된다.동일 두께의 산화막 일지라도 산화막의 구조는 모두 다르다. 32.5mmol LiOH에서 생성된 산화막온 천이전,후에 관계 없이 많은 기공이 함유된 등축정 구조를 갖는다. 반면에 NaOH에서 생성된 산화막은 천이전에는 주상정 구조를 갖지만 천이후에는 다공성의 등축정 구조로 바뀐다. KOH용액에서는 천이전에는 주상정과 비정질 산화막의 이중 구조를 갖지만 천이후에는 비정질 산화막은 사라직 전반적으로 주상정 구조가 형성된다. 부식거동과 산화막 관찰로부터 금속이온의 산화막내 치환이 부식속도와 산화막 미세구조를 지어한다는 것을 알 수 있었다.

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기계화학적 극미세 가공기술을 이용한 PDMS 복제몰딩 공정용 서브마이크로 몰드 제작에 관한 연구 (A Study on the Fabrication of Sub-Micro Mold for PDMS Replica Molding Process by Using Hyperfine Mechanochemical Machining Technique)

  • 윤성원;강충길
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.351-354
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    • 2004
  • This work presents a simple and cost-effective approach for maskless fabrication of positive-tone silicon master for the replica molding of hyperfine elastomeric channel. Positive-tone silicon masters were fabricated by a maskless fabrication technique using the combination of nanoscratch by Nanoindenter ⓡ XP and XOH wet etching. Grooves were machined on a silicon surface coated with native oxide by ductile-regime nanoscratch, and they were etched in a 20 wt% KOH solution. After the KOH etching process, positive-tone structures resulted because of the etch-mask effect of the amorphous oxide layer generated by nanoscratch. The size and shape of the positive-tone structures were controlled by varying the etching time (5, 15, 18, 20, 25, 30 min) and the normal loads (1, 5 mN) during nanoscratch. Moreover, the effects of the Berkovich tip alignment (0, 45$^{\circ}$) on the deformation behavior and etching characteristic of silicon material were investigated.

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