• Journal of Magnetics
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• v.21 no.2
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• pp.168-172
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• 2016

$BiMnO_3$ has been a promising candidate as a magnetoelectric multiferroic while there have been many controversial reports on its ferroelectricity. The detailed analysis of its film growth, especially the growth of thin film having monoclinic symmetry has not been reported. We studied the effect of miscut angle, the substrate surface, and film thickness on the symmetry of $BiMnO_3$ thin film. A flat $SrTiO_3$ (110) substrate resulted in a thin film with three domains of $BiMnO_3$ and 1 degree miscut in the $SrTiO_3$ (110) substrate resulted in dominant domain preference in the $BiMnO_3$ thin film. The larger miscut resulted in a nearly perfect detwinned $BiMnO_3$ film with a monoclinic phase. This strong power of domain selection due to the step edge of the substrate was efficient even for the thicker film which showed a rather relaxed growth behavior along the $SrTiO_3$ [1-10] direction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.220-226
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• 2002

Amorphous $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5 and 1.0) thin films were prepared by vacuum evaporation. The resistivity of 7he films decreases from 1.4{\times}10^{-2}$ to $8.84{\times}10^{-5}\Omega cm$ and the type of conductivity changes from p to n with the increase of the x value of the films. D.C. conduction studies on these films ate performed at various electric fields in the temperature range of 303-403 K. At low electric fields, two types of conduction mechanisms, i.e. the variable range hopping and the phonon assisted hopping are found to be responsible for the conduction, depending upon the temperature. The activation energy decreases from 0.082 to 0.076 eV in the temperature range of 303-363 K and from 0.47-0.456 eV in the second range of 363-403 K, indicating the shift of the Fermi level towards the conduction band edge and hence the change of the conduction from P to n type with the increase of the Bi concentration. Poole-Frankel emission dominates at high fields. The shape of the potential well of the localized centre is deduced and the mean free path of the charge carriers is also calculated.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.9-13
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• 2008

Bismuth-substituted yttrium iron garnet($Bi_{0.5}Y_{2.5}Fe_5O_{12}$) films were deposited with the aerosol deposition method and their magnetic and optical properties were investigated as a function of the aerosol incident angle. The optical transmittance of Bi:YIG increased about 80% with increasing the aerosol incident angle from 0 degree to 30 degree, due to decrease of the defects which were formed from agglutinations of the Bi:YIG particles inside and/or surface of the film. The coercive force also decreased largely with increasing the aerosol incident angle due to the reduction of the collision energy between the particles and the substrate and the decrease of the defects.

• ETRI Journal
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• v.35 no.1
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• pp.51-57
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• 2013

In this paper, a small internal antenna for a mobile handset is presented using multiband, wideband, and high-isolation multiple-input multiple-output techniques. The proposed antenna consists of three planar inverted-F antennas (PIFAs) that operate in the global system for mobile communication (GSM900), the digital communication system (DCS), the personal communication system (PCS), the universal mobile telecommunication system (UMTS), and wireless local area network (WLAN) bands with a physical size of $40mm{\times}10mm{\times}10mm$. A resonator attached to the folded PIFA creates dual resonances, achieving a wide bandwidth of approximately 460 MHz, covering the DCS, PCS, and UMTS bands; a meander shorting line is used to improve impedance matching. Additionally, a modified neutralization link is embedded between diversity antennas to enhance isolation, which results in a 6-dB improvement in the isolation and less than 0.1 in the envelope correlation coefficient evaluated from the far-field radiation patterns. Simulation and measurements demonstrate very similar results for S-parameters and radiation patterns. Peak gains show 3.73 dBi, 3.77 dBi, 3.28 dBi, 2.15 dBi, and 5.86 dBi, and antenna efficiencies show 56.15%, 72.15%, 68.59%, 52.92%, and 82.93% for GSM900, DCS, PCS, UMTS, and WLAN bands, respectively.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2650-2652
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• 1999

To satisfy the demand for small size, light weight. high density power supply, the switching frequency of DC/DC converters has been increased. The PWM control of the conventional SMPS have a switching frequency that a level of the conducted noise spectra contribute to switching frequency band. So the electronic equipment is not only affected from that but is restricted to internal regulation like CISPR, FCC, and VDE. In this paper, we analyzed Bi-FM. Bi-FM is two fixed switching frequency with a modulation frequency. So emission spectrum of Bi-FM control signal is spreaded and spectral power level is reduced. In this paper, we analyze the spectral analysis of Bi-FM control signal and the spectral comparison between the PWM control and Bi-FM control. And we confirm that reduced the spectrum power level through simulation using Pspice and experiment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.323-323
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• 2012

We present ferroelectricity of Bi-doped ZnO film probed by piezoresponse force microscopy (PFM), which is one of the Scanning Probe Microscopy techniques. Perovskite ferroelectrics are limited to integration of devices into semiconductor microcircuitry due to hard adjusting their lattice structure to the semiconductor materials. Transition metal doped ZnO film is one of the candidate materials for replacing the perovskite ferroelectrics. In this study, ferroelectric characteristics of the Bi-doped ZnO grown by pulsed laser deposition were probed by PFM. The polarization switching and patterning of the ZnO films were performed by applying DC bias voltage between the AFM tips and the films with varying voltages and polarity. The PFM contrast before and after patterning showed clearly polarization switching for a specific concentration of Bi atoms. In addition, the patterned regions with nanoscale show clearly the local piezoresponse hysteresis loop. The spontaneous polarization of the ZnO film is estimated from the local piezoresponse based on the comparison with LiNbO3 single crystals.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.14-18
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• 2005

Ni-Cr-Sn-Bi alloys were prepared by air melting and sand casting method and their anti-galling behaviors were examined. Anti-galling properties were dominantly influenced by Bi-rich low temperature precipitates. Alloying effects on the anti-galling properties were investigated for several alloying elements to improve anti-galling properties of the alloy. An alloy with $1-3wt\%$ of Te showed markedly improved anti-galling properties. Metallographic and tribological tests were carried out to find out reasons for excellent properties. It was found that Te containing alloy has finely distributed precipitates of Bi-rich phase. The addition of Te changed the morphology of the Ni-rich primary phase from globular to fine dendritic. As a result, the anti-galling phase precipitated between dendrite arms with fine distribution showed excellent anti-galling properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

• Journal of Life Science
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• v.17 no.8 s.88
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• pp.1039-1045
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• 2007

Glioblastoma multiforme (GBM) is the most frequently occurring brain cancer. Although the existence of cancer stem cells (CSCs) in GBM has been established, there is little evidence to explain the link between CSCs and chemoresistance. In this study, we investigated that only a few cells of A172 and established GBM2 survived after 1,3-bis(2chloroethyl)-1-nitrosourea (BiCNU) exposures and these sur-vived cells resist the subsequent BiCNU treatment. In addition, these BiCNU-resistant small pop-ulations derived from GBM cells increased the phosphorylations of Erk and Akt and highly expressed CD133 stem cell surface marker. Furthermore, we observed that the BiCNU-resistant cancer cells de-rived from GBM have grown tumors when transplanted into severe combined immuno-deficient (SCID) mouse brain. These results demonstrate that BiCNU-resistant subpopulation cells derived from GBM have cancer stem-like cell properties. Therefore, it may provide provide further evidence that CSCs in GBM have chemotherapeutic drug resistance.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.707-712
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• 2004

$BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for hetero-epitaxially grown $BiFeO_3$ thin films comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.