• Honam Mathematical Journal
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• v.42 no.2
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• pp.319-330
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• 2020

We introduce a new subclass of q-bi-univalent functions of complex order related to shell-like curves connected with the Fibonacci numbers. We obtain the coefficient estimates and Fekete-Szegö inequalities for the functions belonging to this class. Relevant connections with various other known classes have been illustrated.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.348-350
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• 1994

In this paper, bi-directional buck-boost DC-DC converter for bus regulation system is presented. This converter which has one buck and one boost topology achieves bi-directional power flow using a common power inductor and alternative power switches. By connecting the battery to bus line, it can be regulated to bus voltage and charged the battery alternatively. And as an application, a mode controller is adopted to the converter.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.201-203
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• 1991

T. Kanal et al, were studied the superconducting properties in Bi system by mechanical grinding, in which the authors found that the samples ground degraded from the superconducting phases to nonsuperconducting phases. To obtain more information of the practical application in Bi system with high-Tc phase in this paper, these samples mechanically ground and the high-Tc phase properties of grinding powder samples were investigated.

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.682-688
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• 2012

In this study we aimed to examine the co-doping effects of 1/6 mol% $Co_3O_4$ and 1/4 mol% $Cr_2O_3$ (Co:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Co,Cr-doped ZBS, ZBS(CoCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were formed in all systems. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 by Cr rather than Co. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(CoCr), the varistor characteristics were improved (non-linear coefficient, ${\alpha}$ = 20~63), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to be composed of an electrically single barrier (0.94~1.1 eV) that is, however, somewhat sensitive to ambient oxygen with temperature. The phase development, densification, and microstructure were controlled by Cr rather than by Co but the electrical and grain boundary properties were controlled by Co rather than by Cr.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.60-60
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• 2010

1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide($Bi_2O_3$) is an important p-type semiconductor with main crystallographic polymorphs denoted by $\alpha-$, $\beta-$, $\gamma-$, and $\delta-Bi_2O_3$[1]. Due to its unique optical and electrical properties, $Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study, $Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at $270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at $300^{\circ}C$ for 2h in $O_2$ ambient, we successfully fabicated $Bi_2O_3$nanowires.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.183-188
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• 1999

The crystallization behavior and electrical conductivity of the $CuO-Bi_2O_3-V_2O_5$ glasses with various CuO content were investigated. The glass formation regin was 0~20 mol% Bi2O3, 5~55 mol% CuO, and 30~90 mol% $V_2O_5$ with Tg=$275^{\circ}C$~$290^{\circ}C$. Among glasses with various compositions, the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass heat-treated at $358^{\circ}C$ for 8 h showed the highest conductivity of ~ at room temperature. The heat-treated glasses increased in electrical conductivity by the order of 104 compared to non heat-treated glass. The linear relationship between 1n($\sigma$T)and $T^{-1}$ indicated that electrical conduction in the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass occurred by a small polaron hopping.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.13-19
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• 2020

Annealing effects on the properties of Bi-doped ZnO thin films were investigated. Bi- doped ZnO thin films were deposited on quartzs substrates at 300℃ by using radio-frequency magnetron sputtering system. Post heat treatments at 600, 700, and 800℃ were performed to evaluate the effect of annealing temperatures on the structural, optical, and electrical properties of Bi-doped ZnO thin films. FE-SEM images showed the dramatic surface morphology changes by rearrangement of elements at high heat treatment temperature of 800℃. X-ray diffraction analysis indicated that the peaks of the Bi-doped ZnO thin films were same as the peaks of the (002) planes of ZnO peak-positioned at 2θ=34.0° and peak intensities and FWHMs were improved as the annealing temperatures increased. The optical transmittance was improved with increasing annealing temperatures and was over 80% in the wavelength region between 435 and 1100 nm at the annealing temperature of 700 and 800℃. With increasing annealing temperature, the electron concentrations and electron mobilities were increased. On the other hand, electric resistivity of the films were decreased with increasing annealing temperatures. These results showed that the heat treatment temperature is an important parameter to improve the structural, optical, and electrical properties of Bi-doped ZnO thin films.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.808-815
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• 2005

[ $Bi_xCe_{l-x}O_{2-x/2}$ ](BD C : Bismuth Doped Ceria) powders with x = 0.1, 0.2, and 0.3 were synthesized using the Glycine Nitrate Process (GNP). They were then calcined at $500^{\circ}C$ for 2 hand sintered in a pellet or rod form at 900, 1000 or $1100^{\circ}C$ for 4 h for characterization as the alternative electrolyte material for intermediate temperature solid oxide fuel cells. The BDC powder consisted of a single phase of $CeO_2-Bi_2O_3$ solid solution in the as-synthesized state as well as in the as-calcined state with a mean powder size of 4.5nm in the former state and 6.5 - 10.1nm in the latter. On the contrary, the second phase of $\alpha-Bi_2O_3$ was observed to have been formed in the sinter with its amount increasing roughly with increasing temperature or $Bi_2O_3$ content. The BOC powder was superior in sinterability to other alternative electrolyte materials such as GDC, ScSZ, and LSGM with the minimum sintering temperature for a relative density of $95\%$ or larger as low as $1100^{\circ}C$. The ionic conductivity of BOC increased with $Bi_2O_3$ content and the maximum value of 0.119 S/cm was obtained at $800^{\circ}C$ for $Bi_{0.3}Ce_{0.7}O_{1.85}$.

• Journal of the Chungcheong Mathematical Society
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• v.28 no.4
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• pp.561-573
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• 2015

The aim of this paper is to introduce the notion of left-right (resp. right-left) symmetric bi-derivation of BCH-algebras and some related properties are investigated.