• Tuberculosis and Respiratory Diseases
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• v.42 no.5
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• pp.723-730
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• 1995

Background: Noninvasive ventilation has been used extensively for the treatment of patients with neuromuscular weakness or restrictive chest wall disorders complicated by hypoventilatory respiratory failure. Recently, noninvasive positive pressure ventilation has been used in patients with alveolar hypoventilation, chronic obstructive pulmonary disease(COPD), and adult respiratory distress syndrome. Sanders and Kern reported treatment of obstructive sleep apnea with a modification of the standard nasal CPAP device to deliver seperate inspiratory positive airway pressure(IPAP) and expiratory positive airway pressure(EPAP). Bi-level positive airway pressure(BiPAP) unlike nasal CPAP, the unit delivers a different pressure during inspiration from that during expiration. The device is similar to the positive pressure ventilator or pressure support ventilation. Method and purpose: Bi-level positive airway pressure(BiPAP) system(Respironics, USA) was applied to seven patients with acute respiratory failure and three patients on conventional mechanical ventilation. Results: 1) Two of three patients after extubation were successfully achieved weaning from conventional mechanical ventilation by the use of BiPAP ventilation with nasal mask. Five of seven patients with acute respiratory failure successfully recovered without use of conventional mechanical ventilation. 2) $PaO_2$ 1hour after BiPAP ventilation in acute respiratory failure patients significantly improved more than baseline values(p<0.01). $PaCO_2$ 1hour after BiPAP ventilation in acute respiratory failure patients did not change significantly more than baseline values. Conclusion: Nasal mask BiPAP ventilation can be one of the possible alternatives of conventional mechanical ventilation in acute respiratory failure and supportive method for weaning from mechanical ventilation.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.303-308
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• 2015

Pd-functionalized ${\beta}-Bi_2O_3$ nanowires are synthesized by thermal evaporation of Bi powder using VLS mechanism followed by Pd coating and annealing. In this study, sensing properties of Pd-functionalized ${\beta}-Bi_2O_3$ nanowires sensor to selected concentrations of $NO_2$ gas were examined. Scanning electron microscopy showed that the nanowires with diameters in a range of 100 - 200 nm and lengths of up to a few tens of micrometers. Transmission electron microscopy and X-ray diffraction confirmed that the products corresponded to the nanowires of ${\beta}-Bi_2O_3$ crystals and Pd nanoparticles. Pd-functionalized ${\beta}-Bi_2O_3$ nanowires sensor showed an enhanced sensing performance to $NO_2$ gas compared to as-synthesized ${\beta}-Bi_2O_3$ nanowires sensor. As synthesized and Pd-functionalized ${\beta}-Bi_2O_3$ nanowire sensors showed responses of 178% - 338% and 196% - 535% at $300^{\circ}C$, respectively, to 0.05 - 2 ppm $NO_2$. In addition, the underlying mechanism of the enhancement of the sensing properties of ${\beta}-Bi_2O_3$ nanowires by Pd-functionalization is discussed.

• Journal of Power Electronics
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• v.18 no.4
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• pp.1190-1200
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• 2018

A current sourced bi-directional wireless power transfer (WPT) system is proposed to solve the problems that exist in the bi-directional WPT for vehicle-to-grid (V2G) systems. These problems include the fact that these systems are not safe enough, the output power is limited and the control methods are complicated. Firstly, the proposed system adopts two different compensation and control methods on both the primary and secondary sides. Secondly, based on an AC impedance analysis, the working principle is analyzed and the parameter configuration method with frequency stability is given. In order to output a constant voltage, a bi-directional DC/DC circuit and a controllable rectifier bridge are adopted, which are based on the "constant primary current, constant secondary voltage" control strategy. Finally, the effectiveness and feasibility of the proposed methods are verified by experimental results.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.62-66
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• 2003

The preparation of n-type thermoelectric material of Bi₂ Te/sub 2.55/Se/sub 0.45/ doped with CuBr₂ was carried out using a vertical gradient freezing method. With this method, unidirectional solidified Bi₂Te/sub 2.55/Se/sub 0.45/ has been obtained. XRD analysis demonstrated that Bi₂/sub 2.55/Se/sub 0.45/ 5 ingot has grown with prefer orientation of (0 1 5) face. Seebeck coefficient and electrical conductivity were measured as functions of temperature in the range of 373 K to 523 K on the sample which prepared via VGF method.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3368-3372
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• 2012

The $Bi_2O_3$ nanowires are highly sensitive to low concentrations of $NO_2$ in ambient air and are almost insensitive to most other common gases. However, it still remains a challenge to enhance their sensing performance and detection limit. This study examined the influence of the encapsulation of ${\beta}-Bi_2O_3$ nanorods with $In_2O_3$ on the $NO_2$ gas sensing properties. ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorods were fabricated by a two-step process comprising the thermal evaporation of $Bi_2O_3$ powders and sputter-deposition of $In_2O_3$. Multiple networked ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorod sensors showed the responses of 12-156% at 1-5 ppm $NO_2$ at $300^{\circ}C$. These response values were 1.3-2.7 times larger than those of bare ${\beta}-Bi_2O_3$ nanorod sensors at 1-5 ppm $NO_2$. The enhancement in the response of ${\beta}-Bi_2O_3$ nanorods to $NO_2$ gas by the encapsulation by $In_2O_3$ can be accounted for based on the space-charge model.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.481-486
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• 2002

We have investigated the effects of plating materials for Cu lead (Sn-lOPb, AwPdJNi, Sn-3.5Ag, Sn-3Bi and Sn-0.7Cu) on properties of QFP joints using a Sn-8Zn-3Bi solder. The results were compared with the joints using Sn-3. 5Ag-0. 7Cu and Sn-37Pb solders. As a result, the joints with the Sn-3.5Ag, Sn-3Bi and Sn-0.7Cu plated Cu lead had the reliability comparable to those of the Sn-3.5Ag-0.7Cu and Sn-37Pb soldered joints with respect to the joint strength after the high temperature holding tests at 348K to 423k. In particular, the joint with the Sn-3.5Ag plated Cu lead had the best reliability. This is caused by the low growth rate of a Cu-Sn interfacial reaction layer that degrades the joint strength of the soldered joints. Consequently, the Sn-3.5Ag plating was found to be most feasible plating for the Sn-8Zn-3Bi soldered joint.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.577-580
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• 1998

This paper presents the characteristics of each MOS device and Bipolar device, then investigates about how these devices take effect on BiCMOS inverter from 300K to 470K. The turn-off and Logic swing characteristics of BiCMOS inverter are degraded by the electrical characteristics of the MOS to around 400K, but over that temperature enhanced by the characteristics of the Bipolar transistor.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1040-1048
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• 1998

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.855-862
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• 1992

Thermoelectric power, electrical conductivity and Hall effect were measured, as functions of temperature in the range of 100 to 600 K, on polycrystalline Bi4/3Sb2/3Te3 which had been prepared via uniaxial hot-pressing at different temperatures in the range of 373 K to 773 K, aiming at searching a profitable processing route to a polycrystalline thermoelectric material, a promising, viable alternative to a single crystalline one. It was found that, with increasing temperature of pressing under a fixed pressure, the material, normally a p-type prior to being hot-pressed, underwent a transition to n-type. This transition was confirmed to be due to plastic deformation during hot-pressing and interpreted as being attributed to the change of the major ionic defect BiTe' into TeBi˙at temperature high enough for structure elements mobility. Thermoelectric figure-of-merit of the hot-pressed material was discussed in connection with the p-n transition in addition to microstructure.

• Journal of Powder Materials
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• v.20 no.5
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• pp.345-349
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• 2013

Carbon nanotube-dispersed bismuth telluride matrix (CNT/$Bi_2Te_3$) nanopowders were synthesized by chemical routes followed by a ball-milling process. The microstructures of the synthesized CNT/$Bi_2Te_3$ nanopowders showed the characteristic microstructure of CNTs dispersed among disc-shaped $Bi_2Te_3$ nanopowders with as an average size of 500 nm in-plane and a few tens of nm in thickness. The prepared nanopowders were sintered into composites with a homogeneous dispersion of CNTs in a $Bi_2Te_3$ matrix. The dimensionless figure-of-merit of the composite showed an enhanced value compared to that of pure $Bi_2Te_3$ at the room temperature due to the reduced thermal conductivity and increased electrical conductivity with the addition of CNTs.