Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1998.10a
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- Pages.577-580
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- 1998
High Temperature Characterization of PSA-BiCMOS
PSA-BiCMOS의 고온특성에 관한 연구
Abstract
This paper presents the characteristics of each MOS device and Bipolar device, then investigates about how these devices take effect on BiCMOS inverter from 300K to 470K. The turn-off and Logic swing characteristics of BiCMOS inverter are degraded by the electrical characteristics of the MOS to around 400K, but over that temperature enhanced by the characteristics of the Bipolar transistor.
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