• Title/Summary/Keyword: K-Band

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Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability

  • Lee, Jang Woo;Choi, Woo Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.271-276
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    • 2017
  • The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation.

PECVD에 의한 다이아몬드성 탄소박막의 증착기구에 관한 연구

  • Kim, Han;Joo, Seung-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 1994.06a
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    • pp.54-69
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    • 1994
  • 메탄을 원료가스로 하여 ppECVD에 의해 다이아몬드성 탄소(DLC) 박막을 형성하였 으며 이 때 인가전력의 크기 및 주파수 그리고 보조가스의 종류가 opptical band gapp의 크 기에 미치는 영향에 대하여 연구하였다. DLC 박막의 opptical band gapp은 증착되는 이온의 에너지가 증가할수록 감소하였으며, 불활성 기체를 보조가스로 사용하는 경우 인가전력에 따른 opptical band gapp의 크기가 큰 폭으로 심화되었다. 수소를 보조가스로 사용한 경우는 높은 인가전력(100W)에서 opptical band gapp이 증가하는 것으로 밝혀졌으며 본 연구에서 새로이 제안된 증착기구의 모델에 의해 적절한 설명이 가능하였다.

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Dependency of Tunneling Field-Effect Transistor(TFET) Characteristics on Operation Regions

  • Lee, Min-Jin;Choi, Woo-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.4
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    • pp.287-294
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    • 2011
  • In this paper, two competing mechanisms determining drain current of tunneling field-effect transistors (TFETs) have been investigated such as band-to-band tunneling and drift. Based on the results, the characteristics of TFETs have been discussed in the tunneling-dominant and drift-dominant region.

Immunoelectrophoretic analysis of major component proteins In cystic fluid of Taenia solium metacestodes (면역전기영동법에 의한 유구낭미충 낭액의 구성 단백질 분석)

  • Yoon Kong;Seung-Yull Cho;Suk-Il Kim;Shin-Yong Kang
    • Parasites, Hosts and Diseases
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    • v.30 no.3
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    • pp.209-218
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    • 1992
  • When cystic fluid of Taenia solium metacestodes (CF) was filtrated through Sephacryl S-300 Superfine, major proteins were in fractions III add IV Major protein in fraction III was Band C protein of 150 kDa and that in fraction IV was Band N protein (Choi et of., 1990). When CF was electrophoresed in 0.9% agarose gel and reacted with anti-CF rabbit serum (RACF), two main bands, a long outer and a short inner band, were precipitated, together with 8 minor bands. RACF reacted with fraction III forming the long outer band whereas RACF formed the short infer band with fraction IV in immunoelectrophoresis (IEP) The long outer precipitin band of CF fraction III was similar to antigen B in hydatid fluid (HF) of Oriol et at. (1971), while the short inner band of CF fraction IV was similar to HF antigen 5 of Caption et at. (1967) . When HF was reacted with RACF, the short inner band was immunoprecipitated without forming the long outer band. Common antigenicity between CF and HF seemed to exist in fraction IV rather than in fraction III of CF. Patient sera of neurocysticercosis reacted more frequently with fraction III than with fraction IV.

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40-㎓-band Low Noise Amplifier MMIC with Ultra Low Gain Flatness

  • Chang, Woo-Jin;Lee, Jin-Hee;Yoon, Hyung-Sup;Shim, Jae-Yeob;Lee, Kyung-Ho
    • Proceedings of the IEEK Conference
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    • 2002.07a
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    • pp.654-657
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    • 2002
  • This paper introduces the design and implementation of 40-㎓-band low noise amplifier (LNA) with ultra low gain flatness for wide-band wireless multimedia and satellite communication systems. The 40-㎓-band 4-stage LNA MMIC (Monolithic Microwave Integrated Circuit) demonstrates a small signal gain of more than 20 ㏈, an input return loss of 10.3 ㏈, and an output return loss of 16.3 ㏈ for 37$\square$42 ㎓. The gain flatness of the 40-㎓-band 4-stage LNA MMIC was 0.1 ㏈ for 37$\square$42 ㎓. The noise figure of the 40 ㎓-band LNA was simulated to be less than 2.7 dB for 37~42 ㎓. The chip size of the 4-stage LNA MMIC was 3.7${\times}$1.7 $\textrm{mm}^2$.

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Multi-band Approach to Deep Learning-Based Artificial Stereo Extension

  • Jeon, Kwang Myung;Park, Su Yeon;Chun, Chan Jun;Park, Nam In;Kim, Hong Kook
    • ETRI Journal
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    • v.39 no.3
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    • pp.398-405
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    • 2017
  • In this paper, an artificial stereo extension method that creates stereophonic sound from a mono sound source is proposed. The proposed method first trains deep neural networks (DNNs) that model the nonlinear relationship between the dominant and residual signals of the stereo channel. In the training stage, the band-wise log spectral magnitude and unwrapped phase of both the dominant and residual signals are utilized to model the nonlinearities of each sub-band through deep architecture. From that point, stereo extension is conducted by estimating the residual signal that corresponds to the input mono channel signal with the trained DNN model in a sub-band domain. The performance of the proposed method was evaluated using a log spectral distortion (LSD) measure and multiple stimuli with a hidden reference and anchor (MUSHRA) test. The results showed that the proposed method provided a lower LSD and higher MUSHRA score than conventional methods that use hidden Markov models and DNN with full-band processing.

Design of InfiniBand RDMA-based Network Structure of Apache Storm (InfiniBand RDMA 기반 Apache Storm의 네트워크 구조 설계)

  • Yang, Seokwoo;Son, Siwoon;Choi, Seong-Yun;Choi, Mi-Jung;Moon, Yang-Sae
    • Proceedings of the Korea Information Processing Society Conference
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    • 2017.11a
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    • pp.679-681
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    • 2017
  • Apache Storm은 대용량 데이터 스트림을 처리하기 위한 실시간 분산 병렬 처리 프레임워크이며, 이를 사용해 다수의 프로세스 및 스레드를 동시에 동작시킬 수 있다. 하지만, 이러한 멀티 프로세스 및 스레드 환경을 제공하는 Storm은 많은 네트워크 시스템 호출을 수행하고, 이는 잦은 문맥 전환(context switch), 운영체제로의 버퍼 복사, 운영체제 내의 버퍼 복사 등으로 인해 CPU 과부하 문제를 발생시킬 수 있다. 이러한 문제는 고성능 네트워크 장비인 InfiniBand의 IPoIB(IP over InfiniBand) 통신을 사용할 때, InfiniBand가 지원하는 대역폭(bandwidth) 대비 저용량 데이터의 송수신으로 인해 더 잦은 문맥 전환과 버퍼 복사가 발생하여 CPU 과부하 문제가 더욱 심각해진다. 따라서, 본 논문에서는 InfiniBand의 RDMA(Remote Direct Memory Access)를 Storm에 적용하는 설계안을 제시함으로써 CPU 과부하 문제를 해결한다.

Two-dimensional modelling of uniformly doped silicene with aluminium and its electronic properties

  • Chuan, M.W.;Wong, K.L.;Hamzah, A.;Rusli, S.;Alias, N.E.;Lim, C.S.;Tan, M.L.P.
    • Advances in nano research
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    • v.9 no.2
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    • pp.105-112
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    • 2020
  • Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

Band Alignment at CdS/wide-band-gap Cu(In,Ga)Se2 Hetero-junction by using PES/IPES

  • Kong, Sok-Hyun;Kima, Kyung-Hwan
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.5
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    • pp.229-232
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    • 2005
  • Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

Design of a Simultaneously Operable Tri-band Antenna for SATCOM (위성통신용 삼중대역 동시사용 안테나 설계)

  • Woo, Byung-Seok
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.15 no.2
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    • pp.195-202
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    • 2015
  • As satellite communications services are showing gradual growth, so are the needs for dual or tri-band antennas greater than performance of conventional single-band antennas. In this paper, a simultaneously operable tri-band antenna for SATCOM(Satellite Communications) is proposed. It is different from conventional methods of implementing tri-band through replaceable horns, while it is designed with a tri-band feed assembly composed of corrugated and dielectric horns and reflectors of gregorian type to transmit and receive tri-band of X, Ku and Ka band simultaneously. And simulated and measured values were compared and analyzed for characteristics of the proposed antenna. In the results, radiation patterns of the proposed tri-band antenna were close to the simulated ones and also met specifications.