• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.409-411
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• 2014

Based on the first-principles computations, the nature of the microscopic geometry of the molecule-electrode contacts was addressed. The single-molecule junction was prepared by connecting hexanediothiolate (HDT) to Au(111) electrodes via one, two, and three Au adatoms having coordination number of one (CN1), two (CN2), and, three (CN3), respectively. The contact atomic structure and energy of the stretched Au-HDT-Au junction was observed. The analysis revealed that the contact geometry with lowest coordination number (CN1) is energetically more stable than CN2 and CN3.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.181-182
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• 2013

저온 공정을 통한 저가형의 태양전지를 만들기 위해 ALD 공정 법으로 Zinc oxide의 전도성을 조절하여 전기 증착법을 통해 성장시킨 Cuprous oxide와 p-n heterojunction을 구성하고 태양전지를 제작하였을 때 최적의 효율을 확인하였다. 전도성이 낮아질수록 전착법과의 p-n junction에서의 Jsc값이 증가하여 100도의 Zinc oxide의 경우 0.13%의 태양전지 효율을 보였다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.103-105
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• 2003

The high speed of RSFQ circuits is based on the self-resetting in the overdamped Josephson junctions. The SIS technology using Nb/A1$_2$O$_3$/Nb trilayer has been successfully adopted as a standard technology. However the newly suggested SINIS technology attracts interest because the junction itself is overdamped without any external shunt, and provides possibility of simplification of RSFQ circuit design and fabrication. In this paper we demonstrate RSFQ circuit fabrication process using SINIS technology.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권3호
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1448-1450
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• 1994

The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1813-1817
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• 2007

The present work presents plastic limit load solutions for piping branch junctions with local wall-thinning, based on detailed three-dimensional (3-D) and small strain FE limit analyses using elastic-perfectly plastic materials. Three types of loading are considered; internal pressure, in-plane bending on the branch pipe and in-plane bending on the run pipe. The wall-tinning located on variable area of the piping branch junction is considered. A wide range of piping branch junction and wall-thinning geometries are considered. Comparison of the proposed solutions with FE results shows good agreement

• Journal of the Korean Society for Industrial and Applied Mathematics
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• 제21권2호
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• pp.63-73
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• 2017

Segmenting the image into multiple regions is at the core of image processing. Many segmentation formulations of an images with multiple regions have been suggested over the years. We consider segmentation algorithm based on the multi-phase level set method in this work. Proposed method gives the best result upon other methods found in the references. Moreover it can segment images with intensity inhomogeneity and have multiple junction. We extend our method (GLIF) in [T. Dultuya, and M. Kang, Segmentation with shape prior using global and local image fitting energy, J.KSIAM Vol.18, No.3, 225-244, 2014.] using a multiphase level set formulation to segment images with multiple regions and junction. We test our method on different images and compare the method to other existing methods.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Progress in Superconductivity
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• 제1권2호
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• pp.95-98
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• 2000

We have studied critical currents of $YBa_2Cu_3O_7$ step-edge junctions with different step orientations with respect to the major axes of $SrTiO_3$ (100) substrates. The junctions were prepared by pulsed laser deposition and argon ion milling with photoresist mask. We investigated current-voltage characteristics and critical current of the junctions as a function of the angle. The junction critical current showed an angle dependent modulation with maxima near 0 or 90 degree and minima near 45 and 135 degrees. The experimental results were analyzed based on the microstructure of the junction along the step and the d-wave symmetry of $YBa_2Cu_3O_7$ superconductor.

• 한국재료학회지
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• 제32권8호
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• pp.333-338
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• 2022

In this work, we developed silver nanowires and a silicon based Schottky junction and demonstrated ultrafast broadband photosensing behavior. The current device had a response speed that was ultrafast, with a rising time of 36 ㎲ and a falling time of 382 ㎲, and it had a high level of repeatability across a broad spectrum of wavelengths (λ = 365 to 940 nm). Furthermore, it exhibited excellent responsivity of 60 mA/W and a significant detectivity of 3.5 × 10¹² Jones at a λ = 940 nm with an intensity of 0.2 mW cm^-2 under zero bias operating voltage, which reflects a boost of 50 %, by using the AC PV effect. This excellent broadband performance was caused by the photon-induced alternative photocurrent effect, which changed the way the optoelectronics work. This innovative approach will open a second door to the potential design of a broadband ultrafast device for use in cutting-edge optoelectronics.