• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.386-386
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• 2012

We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1435-1438
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• 1994

The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.137-137
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• 2004

• Genomics & Informatics
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• 제4권1호
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• pp.33-39
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• 2006

Alternative splicing (AS) is an important mechanism of producing transcriptome diversity and microarray techniques are being used increasingly to monitor the splice variants. There exist three types of microarrays interrogating AS events-junction, exon, and tiling arrays. Junction probes have the advantage of monitoring the splice site directly. Johnson et al., performed a genome-wide survey of human alternative pre-mRNA splicing with exon junction microarrays (Science 302:2141-2144, 2003), which monitored splicing at every known exon-exon junctions for more than 10,000 multi-exon human genes in 52 tissues and cell lines. Here, we describe an algorithm to deduce the relative concentration of isoforms from the junction array data. Non-negative Matrix Factorization (NMF) is applied to obtain the transcript structure inferred from the expression data. Then we choose the transcript models consistent with the ECgene model of alternative splicing which is based on mRNA and EST alignment. The probe-transcript matrix is constructed using the NMF-consistent ECgene transcripts, and the isoform abundance is deduced from the non-negative least squares (NNLS) fitting of experimental data. Our method can be easily extended to other types of microarrays with exon or junction probes.

• 한국공간구조학회논문집
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• 제1권1호
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• pp.117-124
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• 2001

In Single-layer latticed domes with rectangular network which is composed of ring of circumferential direction and rafter of longitudinal direction, that is, rib domes, if we use the cross-membered junction's method for the advantage in fabrication and construction, the eccentricity is occurred in the nodal point of crossing members. This paper is aimed at investigating the buckling characteristics for the effect of eccentricity according to rise-span ratios and distance of eccentricity. Analysis method is based on FEM dealing with the geometrically nonlinear deflection problems. The conclusion were given as follows: 1. The maximum decreasing ratio of buckling strength due to the junction's eccentricity is about 60% in models of this paper. 2. In the increasing ratio of buckling strength for rise-span ratio, that of Type 3 models is larger than that of type 2 models. On the other hand, that of Type 2 mode is larger than that of Type 3 for eccentricity-distance. 3. In the viewpoint of the value of buckling strength, that of Type 2 models is larger than that of type 3 models. The effect of the junction's rigidity on buckling strength is not great for overall models. Therefore if we use the cross-membered junction's method for the advantage in fabrication and construction, the method of Type 2 will have the great advantage of that of Type 3.

• Nuclear Engineering and Technology
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• 제53권3호
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• pp.804-811
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• 2021

The T-junction exists widely in industrial engineering, especially in nuclear power plants, which plays an important part in nuclear power reactor thermal-hydraulics. However, the existing prediction models of the liquid entrainment are mainly based on the small branches or small breaks while there are a few researches for large branches (d/D > 0.2). Referring to the classical models about the onset of liquid entrainment of the T-junction, most of previous models regard liquid as ideal working fluid and ignore surface tension. This paper aims to study the effect of surface tension on the liquid entrainment, and develops an improved model based on the reasonable assumption. The establishment of new model employs the methods of force analysis, dimensional analysis. Besides, the dimensionless Weber number is adopted innovatively into the model to show the effect of surface tension. What is more, in order to validate the new model, three kinds of working fluids with different surface tensions are creatively adopted in the experiments: water, silicone oil and ethyl alcohol. The final results show that surface tension has a nonnegligible effect on the onset of liquid entrainment in large branch T-junction. The new model is well matched with the experimental data.

• Journal of Power Electronics
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• 제12권1호
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• pp.19-23
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• 2012

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

• 대한화학회지
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• 제59권1호
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• pp.18-21
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• 2015

We use a scanning tunneling microscope based break-junction technique to measure the conductance of a 4,4'-dimethoxybiphenyl molecular junction formed with Ag and Au electrodes. We observe the formation of a clear molecular junction with Ag electrodes that result from stable Ag-oxygen bonding structures. However we have no molecular bonding formation when using Au electrodes, resulting in a tunneling current between the top and bottom metal electrodes. We also see a clear peak in the conductance histogram of the Ag-oxygen molecular junctions, but no significant molecular features are seen with Au electrodes. Our work should open a new path to the conductance measurements of single-molecule junctions with oxygen linkers.

• Progress in Superconductivity
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• 제13권1호
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• pp.47-51
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• 2011

Mono-atomic-layer graphene is an interesting system for studying the relativistic carrier transport arising from a linear energy-momentum dispersion relation. An easy control of the carrier density in graphene by applying an external gate field makes the system even more useful. In this study, we measured the Josephson current in a device consisting of mono-layer graphene sheet sandwiched between two closely spaced (~300 nm) aluminum superconducting electrodes. Gate dependence of the supercurrent in graphene Josephson junction follows the gate dependence of the normal-state conductance. The gate-tunable and relatively large supercurrent in a graphene Josephson junction would facilitate our understanding on the weak-link behavior in a superconducting-normal metal-superconducting (SNS) type Josephson junction.