• 한국초전도학회:학술대회논문집
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• v.12
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• pp.40-40
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• 2002

• Progress in Superconductivity
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• v.4 no.1
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• pp.37-41
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• 2002

In this work. we have designed two different kinds of Rapid Single Flux Quantum (RSFQ) OR-gates. One was based on the already developed RSFQ cells and the other was aimed to develop a more compact version. In the first circuit, we used a combination of two D Flip-Flops and a merger and in the other circuit we used a combination of RS Flip-Flops and Confluence Buffer. We tested the circuit performance by using the simulation tools, Xic and Wrspice. We obtained the operation margins of the circuit elements by a margin calculation program, and we obtained the minimum operation margins of $\pm$30%. The circuits were laid out, aimed to fabricate by using the existing KRISS Nb process. KRISS Nb process includes the $Nb／Al_2$$O_3$／Nb trilayer fabricated by DC magnetron sputtering and the reactive ion etching technique for the definition of the features. The major tools used in the layouts were Xic and L-meter.