• Nuclear Engineering and Technology
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• v.19 no.2
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• pp.115-121
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• 1987

A high voltage stabilization system for the SNU 1.5MV Tandem Van do Graaff accelerator was set up and its operational characteristics were examined and optimized. The optimum parameters of beam transport system were experimentally determined, and under the proper condition the accelerated proton beam current of 350nA was obtained at the target chamber. Without the high voltage stabilization the observed magnitude of voltage fluctuation was $\Delta$V/ V=5.2$\times$10$^{-3}$ without ion beam and 7.2$\times$10$^{-3}$ with ion beam, respectively, and its apparent ripple frequency for voltage fluctuations was about 3Hz or less. Through the optimized operation of the high voltage stabilization system, the terminal voltage fluctuation was reduced to $\Delta$V/V=2.45$\times$10$^{-4}$ and the energy stability with $\Delta$E/E=2.44$\times$10$^{-4}$ was steadily maintained at the 247.3kV terminal voltage, and the stabilization factor was deduced to be 29.4.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• Journal of Biosystems Engineering
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• v.31 no.3 s.116
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• pp.153-160
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• 2006

This study was performed to evaluate some geometrical characteristics of disc type swirl nozzles and to develop nozzles having improved spraying performance for knapsack sprayers. Considered geometrical characteristics of the nozzles were disc thickness, orifice diameter, swirl chamber diameter and shape of the swirl chamber (nozzle chamber). 3 types of nozzle cores were compared. Main results of this study were as follows. 1. Spraying angle (A) was increased with decreasing disc thickness (x), and with increasing orifice diameter (y) or spraying pressure (z). The equation was as a follow. $$A=3.95\frac{1}{x}+73.50\sqrt{y}+18.97\sqrt{z}-60.16$$ 2. Spraying flow rate (F) was increased with decreasing disc thickness (x), and with increasing orifice diameter (y) or spraying pressure (z). The equation was as a follow. $$F=-89.95x+611.09y+620.49\sqrt{z}-868.20$$ 3. Mean spraying droplet size (V) was decreased with decreasing disc thickness (x), with increasing orifice diameter (y) in low spraying pressure, with decreasing orifice diameter (y) in high spraying pressure, and with increasing spraying pressure (z). $$V=148.77x^4-746.85x^3+1311.76x^2-917.31x$$ 4. The spray pattern was compared using CV values. The CV value of the nozzle core type 1 was 26.7% in spraying pressure $3\;kgf/cm^2$, the CV value of the core type 2 was 23.6% in spraying pressure $2\;kgf/cm^2$, the CV value of the core type 3 was 20.6% in spraying pressure $1\;kgf/cm^2$. 5. Minimum spraying pressure was improved from $1.5\;kgf/cm^2\;to\;1.0\;kgf/cm^2$ by changes of nozzle core shape.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.2
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• pp.122-129
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• 2005

The characteristics of hydrogen storage have been investigated in the Ti-Cr-Mo and Ti-Cr-V ternary alloys with bcc structure. The alloys were melted by arc furnace and remelted 4-5 times for homogeneity. The lattice parameters, microstructures and phases of the alloys were examined by SEM, EDX and XRD, and the Pressure-Composition isotherms of the alloys were measured. From these data the relationship of the maximum and effective hydrogen storage capacities vs. chemical composition, lattice parameter and the radius of tetrahedral site were analyzed and discussed. The results showed that all of these alloy, in the range of the this study, had mainly bcc solid solutions with small amount of Ti segregation due to a lower melting point of Ti compared with other elements. Lattice parameters of the alloys were very near to the atomic average values of lattice parameters of the constituent elements. It was also found that maximum hydrogen storage capacities of the Ti-Cr-Mo alloys increased with increasing Ti content and the radius of tetrahedral site but the effective hydrogen storage capacities decreased after showing the maximum. The hydrogen storage capacities of the Ti-Cr-V alloys were almost same even though the V contens were quite different from alloy to alloy and this could be attributed to the almost same Ti/Cr ratio of the alloys. The maximum effective hydrogen storage capacity of the Ti-Cr-Mo alloys was revealed at Ti content of about 40${\sim}$50 at% and radius of tetrahedral site of 0.43${\sim}$0.45 nm. The Ti-Cr-V alloys showed the hydrogen storage capacities of 3.0 wt% and effective hydrogen storage capacities of 1.5 wt%.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• Journal of Power System Engineering
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• v.15 no.2
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• pp.31-36
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• 2011

The flow characteristics on the periodically arranged semi-circular ribs in a rectangular channel for turbulent flow have been investigated numerically. The aspect ratio of the rectangular channel was AR=5, the rib height to hydraulic diameter ratio was 0.07 and rib height to channel height ratio was e/H=0.117. The v2-f turbulence model and SST k-${\omega}$ turbulence model were used to find the flow characteristics of near the wall which are suited for realistic phenomena. The numerical analysis results show turbulent flow characteristics and pressure drop at the near the wall as observed experimentally. The results predict that turbulent kinetic energy(k) is closely relative to the diffusion of recirculation flow, and v2-f turbulence model simulation results have a good agreement with experimental.

• Transactions of Materials Processing
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• v.27 no.3
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• pp.139-144
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• 2018

Many studies have been conducted on the process of forming magnesium alloy sheets to reduce the body weights of vehicles. Magnesium has a lower specific gravity than steel and also has a higher specific strength. Mg alloy sheets have low formability and a lot of springback due to their limited ductility and low young's modulus. As the temperature increases, the yield strength of the material decreases. Warm forming increases the formability and minimizes the springback of a material by heating it and the die to reduce the required load at forming. In this study, the temperature of the AZ31B sheet was controlled in order to reduce springback and increase formability. However, as the temperature increased, the deformation characteristics of the material changed and the radius of curvature of the material increased. The load and springback amount required for forming were analyzed according to the temperature and the bottoming force in the bending deformation.

• Applied Chemistry for Engineering
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• v.30 no.4
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• pp.504-508
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• 2019

The feasibility of replacing the tope cell of pn GaInP homojunction with our GaInP/AlGaInP heterojunction structure in III-V semiconductor multijunction photovoltaic (MJPV) cells having the highest current conversion efficiency was investigated. The performance of photovoltaic (PV) cells grown on $2^{\circ}$ and $10^{\circ}$ off-oriented GaAs substrates were compared to each other. The PV cells on the $10^{\circ}$ off-cut substrate showed higher short-circuit current density ($J_{sc}$) and conversion efficiency values than that of using the $2^{\circ}$ one. For $2{\times}2mm^2$ area PV cell on $10^{\circ}$ off substrate, the $J_{sc}$ of $9.21mA/cm^2$ and the open-circuit voltage of 1.38 V were measured under 1 sun illumination. For $5{\times}5mm^2$ cell on $10^{\circ}$ off substrate, the conversion efficiency was decreased from 6.03% (1 sun) to 5.28% (20 sun) due to a decrease in fiill factor (FF).

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.