• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.612-614
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• 2008

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10nm to 50nm, we have obtained that the optimum CuPc layer thickness is around 40nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.4
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• pp.498-505
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• 1986

In2O3: Sn(ITO) transparent conducting films were fabricated by the electron beam evaporation method. The dependence of their electrical and optical properties on deposition conditions were examined. The optimum evaporation conditions were such that the deposition rate was 5-10\ulcornersec, oxygen partial pressure was 4x10**_4 torr, substate temperatudre was above 300\ulcorner, and SnO2 doping rate was 10 mol%. The values of sheet resistance and transmittance of the films in visible region fabricated under these optimum conditins were 12\ulcorner/ and 87-99%, respecively. And the energy conversion efficiency of the SIS solar cell fabricated using ITO was 9.16%. It is shown that the transparent conducting films can be applied to the TV camear pick-up tube and solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.458.1-458.1
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• 2014

An effective light-managing structure has been achieved by using a nano-imprint method. A transparent conductor of indium-tin-oxide (ITO) was periodically nanodome-shaped to have a height of 200 nm with a diameter of 340 nm on a p-type Si substrate. This spontaneously formed a heterojunction between the ITO layer and Si substrate and effectively reduced the light-reflection. The ITO nanodome device response was significantly enhanced to 6010 from the value of 72.9 of a planar ITO film. The transparent conducting ITO nanodome structure efficiently manipulates the incident light driving into the light-absorber and can be applied in various photoelectric applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.216-220
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• 1994

Polycrystalline CdS films have been prepared by coating a slurry, which consisted of CdS, 11w% CdCl$_2$ and appropriate amount of propylene glycol, on glass substrate and glass substrate coated with indium tin oxide(ITO) followed by sintering in a nitrogen atmosphere. CdTe slurries consisting of Te powder and Cd powder were coated on the sintered CdS films and ITO/CdS films and were sintered in nitrogen to prepare sintered CdS/CdTe and ITO/CdS/CdTe solar cells. The value of fill factor increased due to low series resistance and open circuit voltage decreased due to low shunt resistance in the ITO/CdS/CdTe solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.95-98
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• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.478.1-478.1
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• 2014

We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.44-49
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• 2009

Indium tin oxide(ITO) thin films were deposited on the glass substrates by radio-frequency (RF) magnetron sputtering method. The influence of rapid thermal annealing (RTA) treatment on the optical and electrical properties of the films were investigated for the purpose of fabricating plasma display signboard. Structural properties, surface roughness, sheet resistance and transmittance of the ITO film were analysed by using x-ray diffraction method, atomic force microscopy (AFM), four point prove, and ultraviolet-visible spectrometer, respectively. It was found that the RTA treatment increased the transmittance and decreased the resistivity of the ITO film, respectively. Furthermore, we successfully demonstrated the direct-current plasma signboard by using ITO electrode and phosphors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.228.1-228.1
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• 2014

투명전도성 산화물(TCO,Transparent Conductive Oxide) 물질로 널리 사용되는 ITO 박막은 산화물 반도체를 평판 디스플레이용 투명전극 재료로 개발하기 위한 많은 연구가 진행되고 있다. ITO (Indium tin oxide)는 약 3.5 eV 정도의 넓은 밴드갭을 가진 축퇴반도체로서 전기적 및 광학적 특성이 우수하기 때문에 대표적 투명전도성 박막으로 가장 많이 사용되고 있다.현재 양산화된 ITO의 조성비는 90:10WT%인 타겟을 사용하는대 투명전극은 비저항이 $1{\times}10-3{\Omega}/sq$이하로 면저항이 $103{\Omega}/sq$전기전도성이 우수하고 380에서 780 nm의 가시광선 영역에서의 투과율이 80% 이상이라는 두 가지 성질을 만족시키는 박막이다. 본 실험에서는 SnO2 1~5wt% 인 ITO타겟을 제작하고 RF-Magnetron Sputtering을 사용하여 영구자석을 이용한 고밀도 플라즈마로 높은 점착성과, 균일한 박막 및 대면적 공정이 가능한 RF-magnetron sputtering방법으로 기판인 Slide glass위에 ITO를 증착하여 광학적 특성 및 전기적 특성에 대하여 측정하였다. 전기적, 광학적 특성 등 XRD을 통해 분석하였다. 그리고 증착된 모든 ITO 박막에서 가시광 투과율을 측정하기 위해 UV-Vis spectrophptometer을 이용하여 분석한 결과 90%이상의 높은 투과율이 측정되었다. ITO박막은 Anti-Fogging, Self-Cleaning, Solar cell 및 디스플레이소자 등 다양한 산업에 이용 가능할 것으로 생각된다.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.699-707
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• 1995

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.