Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.458.1-458.1
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- 2014
Nanodome-patterned Transparent Conductor for Highly Responsive Photoelectric Device
- Hong, Seung-Hyeok ;
- Yun, Ju-Hyeong ;
- Park, Hyeong-Ho ;
- Gang, Gil-Mo ;
- Seo, Cheol-Won ;
- Kim, Jun-Dong
- Published : 2014.02.10
Abstract
An effective light-managing structure has been achieved by using a nano-imprint method. A transparent conductor of indium-tin-oxide (ITO) was periodically nanodome-shaped to have a height of 200 nm with a diameter of 340 nm on a p-type Si substrate. This spontaneously formed a heterojunction between the ITO layer and Si substrate and effectively reduced the light-reflection. The ITO nanodome device response was significantly enhanced to 6010 from the value of 72.9 of a planar ITO film. The transparent conducting ITO nanodome structure efficiently manipulates the incident light driving into the light-absorber and can be applied in various photoelectric applications.