• Korean Journal of Metals and Materials
• /
• v.46 no.11
• /
• pp.755-761
• /
• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.7 no.6
• /
• pp.1056-1063
• /
• 2006

Thermal evaporated 10 nm-Ni/l nm-Ir/(or polycrystalline)p-Si(100) and 10 nm-$Ni_{50}Co_{50}$/(or polycrystalline)p-Si(100) films were thermally annealed using rapid thermal annealing fur 40 sec at $300{\sim}1200^{\circ}C$. The annealed bilayer structure developed into Ni(Ir or Co)Si and resulting changes in sheet resistance, microstructure, phase and composition were investigated using a four-point probe, a scanning electron microscopy, a field ion beam, an X-ray diffractometer and an Auger electron spectroscope. The final thickness of Ir- and Co-inserted nickel silicides on single crystal silicon was approximately 20$\sim$40 nm and maintained its sheet resistance below 20 $\Omega$/sq. after the silicidation annealing at $1000^{\circ}C$. The ones on polysilicon had thickness of 20$\sim$55 nm and remained low resistance up to $850^{\circ}C$. A possible reason fur the improved thermal stability of the silicides formed on single crystal silicon substrate is the role of Ir and Co in preventing $NiSi_2$ transformation. Ir and Co also improved thermal stability of silicides formed on polysilicon substrate, but this enhancement was lessened due to the formation of high resistant phases and also a result of silicon mixing during high temperature diffusion. Ir-inserted nickel silicides showed surface roughness below 3 nm, which is appropriate for nano process. In conclusion, the proposed Ir- and Co- inserted nickel silicides may be superior over the conventional nickel monosilicides due to improved thermal stability.

• Korean Journal of Materials Research
• /
• v.17 no.4
• /
• pp.207-214
• /
• 2007

We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.6
• /
• pp.377-382
• /
• 2014

We have investigated the effects of spacer layer inserted between blue and red doped emission layers on the emission and efficiency characteristics of phosphorescent OLEDs. N,N'-di-carbazolyl-3,5-benzene (mCP) was used as a host layer. Iridium(III)bis[(4,6-di-fluorophenyl)- pyridinato-N,$C^2$']picolinate (FIrpic) and tris(1-phenyl-isoquinolinato-$C^2$,N)iridium(III) [Ir(piq)3] were used as blue and red dopants, respectively. The emission layer structure was mCP (1-x) nm/mCP:$Ir(piq)_3$ (5 nm, 10%)/mCP (x nm)/mCP:FIrpic (5 nm, 10%). The thickness of mCP spacer layer was varied from 0 to 15 nm. The emission from $Ir(piq)_3$ and the efficiency of the device were dominated by energy transfer from mCP host and FIrpic molecules, and by diffusion of mCP host triplet excitons.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2011.05a
• /
• pp.375-377
• /
• 2011

The augmented reality is a technology which expresses the information hardly obtained in the real world by synthesizing virtual objects in the real world. This study uses IR LED marker to obtain the coordination of real world for registration of virtual objects. Since the IR LED marker is inserted in target object thus it has properties of invisible markers. To realize the augmented reality, the existence of marker can be observed in camera input image. Therefore, this paper provides a method to give the properties of perfect invisible marker by using inpainting technology when realizing IR LED marker.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.06a
• /
• pp.130-131
• /
• 2003

The magnetic and thermal properties of NiFe/IrMn/CoFe with Mn additions have been studied. As grown CoFe pinned-layers with IrMn-Mn have dominantly larger exchange biasing field( $H_{ex}$) and blocking temperature( $T_{b}$) than when pure I $r_{22}$M $n_{78}$ is used. The magnetic properties improve, $H_{ex}$ and $T_{b}$ improve with 77-78 vol% Mn, but drop considerably with more Mn additions, losing magnetic properties of theb NiFe/IrMn/CoFe with addition 0.6 vol % Mn. The average x-ray diffraction peak ratios fcc (111)CoFe of (111)IrM $n_3$ textures for the Mn inserted total vol of 75, 77, and 79 vol% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between I $r_{22}$M $n_{78}$ and CoFe layers is almost nothing. For two multilayer as-grown samples with ultra-thin Mn layers of 77 vol % and 79 vol %, the $H_{ex}$s are 250 Oe and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was 444 Oe up to 30$0^{\circ}C$ endured of 363 Oe at 40$0^{\circ}C$, respectively. Mn additions improve the magnetic properties and thermal stabilities of NiFe/IrMn/CoFe. Those increase the $H_{ex}$ and $T_{b}$. In applications where higher $H_{ex}$ and $T_{b}$ are accept, proper concentrations of Mn can be used.n can be used.be used.

• Korean Chemical Engineering Research
• /
• v.53 no.1
• /
• pp.53-56
• /
• 2015

In this study, investigated the synthesis method of p-Phenylenediamine (PPD) by amination of p-Diiodobenzene (PDIB) under supercritical ammonia and CuI catalyst conditions. We examined the effects of various process variables (e.g., reaction temperature, pressure, amount of ammonia inserted, amount of catalyst inserted, and reaction time) on the production yield of PPD by analyzing the Gas Chromatography (GC). The experimental results demonstrated that PPD was not produced under non-catalyst conditions, and PPD production yield increased with increasing temperature, pressure, amount of catalyst inserted, and reaction time. However, for the reaction temperature case, it was found that $200^{\circ}C$ was the optimal temperature, because thermal degradation of PPD occurred above $250^{\circ}C$. In addition, we confirmed the structure of PPD and the bonding characteristics of the amine group via FT-IR and H-NMR analysis.

• Journal of the Korean Magnetics Society
• /
• v.13 no.5
• /
• pp.187-192
• /
• 2003

The magnetic and thermal properties of NiFe/[IrMn-Mn]/CoFe with Mn additions have been studied. As-deposited CoFe pinned layers with [IrMn-Mn]layer had dominantly larger exchange biasing field ( $H_{ex}$) and blocking temperature ( $T_{b}$) than those with pure I $r_{22}$M $n_{78}$ used. The $H_{ex}$ and $T_{b}$ improved with 76.8-78.1 vol% Mn, but those of the NiFe/IrMn/CoFe dropped considerably with more addition of 0.6 vol % Mn. The average x-ray diffraction peak ratios of fcc [(111)CoFe, NiFe]/(111)IrM $n_3$ textures for the Mn inserted total vol of 75.5, 77.5, and 79.3% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between IrMn and CoFe layers was almost zero, but it increased to 100 Oe after annealing of 250 $^{\circ}C$. For as-grown two multilayers samples with ultra-thin Mn layers of 77.5 and 78.7 vol %, the $H_{ex}$s were 259 and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was increased up to 475 Oe at 350 $^{\circ}C$ but decreased to 200 Oe at 450 $^{\circ}C$, respectively. The magnetic properties and thermal stabilities of NiFe/[IrMn-Mn]/CoFe multilayer were enhanced with Mn additions. In applications where higher $H_{ex}$ and $T_{b}$ are required, proper contents of Mn can be used. be used. used.

• Journal of the Korean Society of Radiology
• /
• v.14 no.1
• /
• pp.7-14
• /
• 2020

The purpose of this study is to assess the usefulness of IR to compensate for uncertainties in inserting high density artificial objects in radiation treatment planning in the 3D-CRT treatment technique. CT images of the subjects with phantom and titanium inserted were obtained from images without IR and images with IR, and the dose evaluation factors HI, MU and volume evaluation factors Volume and PCI were compared. The results of the stainless steel and titanium phantom experiments showed that the volume of high density artificial material was reduced by 4.850% and 11.456% respectively when applying IR. MU decreased 0.924% and 1.181%. HI was down 0.106% and 0.272%. PCI decreased 0.358% and 0.867%. When IR was applied to CT images of subjects with vertebroplasty, Femur alignment pin and wrist alignment pin, the volume of artifacts decreased by 47.76%, 23.841%, and 49.339%. MU also decreased 0.924%, 0.294% and 1.675%, while HI decreased 1.232%, 0.412% and 1.695%. PCI decreases 4.022%, 0.512%, and 13.472%. In conclusion, When IR was applied to 3D-CRT treatment plan, both dose and volume in phantom and subject case with high density artificial insert were reduced.

• Journal of the Korean Electrochemical Society
• /
• v.6 no.4
• /
• pp.250-254
• /
• 2003

In this study, the IR drop theory was adopted to explain the initiation of crevice corrosion in the framework of IR drop in crevice electrolyte. Furthermore, the electrochemical polarization was measured to study the mechanism of crevice corrosion for type STS430 stainless steel. lest method adopts under condition that the size of specimen is $10\times20\times5mm,\;in\;1N\;H_2SO_4+0.1N\;NaCl$ solution, and the artificial crevice gap sizes are three kinds, the Micro capillary tube size is inner diameter 0.04 mm, outer diameter 0.08 mm. Crevice corrosion is measured under the applied voltage of passivation potential -200mV/SCE, resulted from anodic potentio-dynamic polarization to the external surface along the crevice. The potential difference was measured by depth profile by Micro capillary tube which inserted in the crevice. The obtained results of this study showed that 1) As artificial crevice gap size became narrow, the current density was increased, whereas no crevice corrosion was found in the crevice gap size $3\times0.5\times16mm\;in\;1N\;H_2SO_4+0.1N\;NaCl\;solution\;at\;20^{\circ}C$ 2) potential of the crevice was about from -220 to -358mV which is lower than that of external surface potential of -200mV The results so far confirmes that the potential drop(so-called IR drop) in the crevice is one of the major mechanisms the process of crevice corrosion for 430 stainless steel.