• 대한전기학회논문지
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• 제34권7호
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• pp.289-296
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• 1985

The Townsend primary ionization coefficient a was measured by the luminous-flux method using the fact that the intensity of radiant light is proportional to electron density in the townsend discharge domain. The ranges of measurements were 15for He gas and 10

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• 전기학회논문지P
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• 제58권1호
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• pp.44-47
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• 2009

This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. $SF_6$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_6$ gas characteristics. Electron transport coefficients in $SF_6-N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method. which are ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_6-N_2$ mixture gases.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• 대한전자공학회논문지SD
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• 제41권9호
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• pp.1-9
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• 2004

III-V족 반도체 GaP GaAs 및 InP의 계단형 pn 접합에서의 항복전압을 위한 해석적 식을 유도하였다. 해석적 항복전압을 위해 각 물질에 대한 이온화계수 파라미터를 이용하여 유효 이온화계수를 추출하였고, 이의 이온화 적분을 통해 얻은 해석적 항복전압 결과는 수치적 결과 및 실험 결과와 10% 오차 범위 이내로 잘 일치하였다.

• 대한전자공학회논문지SD
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• 제41권1호
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• pp.9-14
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• 2004

본 논문에서는 Si의 유효 이온화 계수를 온도 함수로 추출하였고, 이 유효 이온화 계수를 이용하여 Si $p^+n$ 접합에서의 항복 전압을 위한 해석적 표현식을 온도 함수로 유도하였다. 100K 300K 및 500K일 경우, 해석적 항복 전압 결과는 $10^{14}cm^{-3}{\~} 10^{17}cm^{-3}$의 농도 범위에서 실험 결과 및 시뮬레이션 결과와 비교하여 오차 범위 $3\%$ 이내로 잘 일치하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2000년도 춘계종합학술대회
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• pp.451-454
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• 2000

임팩트이온화는 고전계하에서 고에너지를 지닌 캐리어간 산란으로써 전자전송해석에 필수적인 요소이다. 임팩트이온화율 계산은 풀밴드 E-k관계와 페르미의 황금법칙을 이용하였다. 본 연구에서는 풀밴드 Monte Carlo 시뮬레이션을 이용하여 온도 및 전계에 대한 Si 임팩트이온화계수를 조사하였다. 임팩트이온화 모델에 의해서 계산된 look의 임팩트이온화계수는 실험값과 잘 맞았다. 온도상승에 따른 임팩트이온화계수와 전자의 에너지는 포논산란의 emission 모드의 증가 때문에 감소함을 알 수 있었다. 임팩트이온화계수의 대수는 온도와 전계에 대한 선형함수로 fitting 되었다. 이 선형함수의 오차는 5%이내이다. 결과적으로 임팩트이온화계수의 대수는 선형적으로 온도와 전계에 의존함을 알 수 있었다.

• 전기학회논문지P
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• 제60권1호
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• pp.27-31
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• 2011

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The electron energy distribution function has been analysed in $CF_4$ at E/N=5, 10, 100, 200 and 300[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

• 대한전자공학회논문지SD
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• 제39권1호
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• pp.12-17
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• 2002

본 논문에서는 전자와 정공의 이온화 계수로부터 4H-SiC를 위한 유효 이온화 계수를 cㆍE/sup m/의 형태로 추출하였고, 이 유효 이온화 계수를 이용하여 4H-SiC p/sup +/n 접합에서의 항복시 임계 전계와 항복 전압을 위한 해석적 표현식을 유도하였다. 해석적 항복 전압 및 항복 전계 결과는 10/sup 15/㎝/sup -3/∼10/sup 18/㎝/sup -3/의 농도 범위에서 실험 결과와 비교하여 오차 범위 10% 이내로 잘 일치하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권4호
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• pp.226-231
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• 1999

Temperature dependence of effective ionization coefficients in GaAs is formulated as a single polynomial function of temperature, which allows analytical expressions for breakdown voltage of GaAs $p^+n$ junctions as a function of temperature. At 300 K, extracted effective ionization coefficient of GaAs $p^+n$ junction especially agrees well with the published result of <111> oriented GaAs. The analytic results agree with the simulation as well as the experimental ones reported within 10% in error for the doping concentrations in the range of $10_{14}cm_{-3}~10_{17}cm_{-3}$ at 100 K, 300 K and 500 K.