• 전기화학회지
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• 제22권3호
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• pp.87-103
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• 2019

현재 상용화되어 있는 리튬이온전지에 사용하고 있는 비수계 유기 전해액은 가연성, 부식성, 고휘발성, 열적 불안정성 등의 단점 때문에 더욱 안전하고 장수명을 보이는 고체 전해질로 대체하는 연구가 진행되고 있으며, 이것은 전기자동차 및 에너지저장 시스템과 같은 중대형 이차전지에도 효율적으로 활용될 수 있다. 다양한 형태의 고체 전해질 중에서 현재 고분자 매트릭스에 활성 무기 충진재가 포함되어 있는 복합 고체 전해질이 고이온전도도와 전극과의 탁월한 계면접촉을 이루는데 가장 유리한 것으로 알려졌다. 본 총설에서는 우선 고체 전해질의 종류와 연혁에 관해 간단히 소개하고, 고분자 및 무기 충진재 (불활성 및 활성)로 구성되는 고체 고분자 전해질 및 무기 고체 전해질의 기본적 물성 및 전기화학적 특성을 개괄한다. 또한 이 소재들의 형상을 기준으로 입자형 (0D), 섬유형 (1D), 평판형 (2D), 입체형 (3D)의 형식으로 구성된 복합고체 전해질과 이에 따른 전고체 전지의 전기화학적 특성을 논의한다. 특히 리튬금속 음전극을 사용하는 전고체 전지에 있어서 양전극-전해질 계면, 음전극-전해질 계면, 입자간 계면의 특성에 관해 소개하고, 마지막으로 현재까지 보고된 관련 총설들을 참조하여 복합 고체 전해질 기술의 현재 요구조건 및 미래 전망을 알아본다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• 한국자기학회지
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• 제16권1호
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• pp.6-10
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• 2006

단일상 $FeCr_{2-x}M_xS_4$ (M=Ga, In; x=0.1, 0.3)에 대하여 x-선 회절기(XRD), 진동 시료 자화율 측정기(VSM), 뫼스바우어 분광기를 이용하여 비자성 이온의 치환효과를 연구하였다. 결정구조는 Rietveld프로그램을 이용하여 공간그룹이 Fd3m[Fe, Ga, In(8a); Cr, Ga, In(160); S(32e) (u, u, u)]인 입방 스피넬 구조임을 확인하였다. 비자성 이온 Ga이 치환된 시료의 경우, Ga이 치환 될수록 격자상수가 10.007에서 $9.996\;{\AA}$,으로 감소하는 반면, In이 치환된 시료의 경우, In이 치환 될수록 격자상수가 10.029에서 $10.092\;{\AA}$로 증가함을 확인하였다 VSM측정 결과 Ga과 In이 치환 될수록 Neel온도는 각각 180에서 188K, 173에서 160K로 변화하였는데, 이것은 격자상수의 변화에 따른 사면체 자리(A자리)와 팔면체 자리(B 자리)의 초교환 상호작용 세기의 변화로 해석 할 수 있었다 $4.2K\~300K$의 온도범위에 걸쳐서 뫼스바우어 스펙트럼을 분석한 결과 Fe이온이 각각 A자리와 B자리에 점유함을 확인 할 수 있었다. 이것은 비자성 이온 Ga과 In 이 A자리의 Fe이온의 비대칭적인 전하 분포를 야기시키는 것으로 해석할 수 있었다. 또한 Cr-S의 결합거리를 비교해 본 결과, $FeCr_{2-x}Ga_xS_4$(x=0.3)와 RFeCr_{2-x}In_xS_4$ (x=0.3)가 각각 2.41, $2.43\;{\AA}$로$FeCr_{2-x}Ga_xS_4$(x=0.3)의 결합거리가 작아 공유 결합력이 커짐에 따라 비대칭적인 전하 분포를 유도함으로 해석할 수 있다. 이는 큰 전기 사중극자를 유도하는 결과와 일치함을 알 수 있었다.

• 대한수의학회지
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• 제36권2호
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• pp.305-312
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• 1996

Cell volume regulatory mechanisms are usually disclosed by exposure of cell to anisotonic media. If a cell is suddenly exposed to hypotonic media, it swells initially like an osmometer but within minutes regains its original cell volume. This behavior has been labelled as regulatory cell volume decrease(RVD). RVD is believed to result from the loss of permeable ions through the membrane. In this study, we examined hypotonically induced changes in the membrance currents involved in RVD by using whole cell voltage clamp technique in the unfertilized hamster egg. At -40mV of the holding potential, the stationary current was maintained in the hamster egg exposed to isotonic solution composed of, mainly, 115mM NaCl and 40mM mannitol. Hypotonic solution was prepared by removing mannitol. Therefore, the concentrations of $Na^+$ and $Cl^-$ in this hypotonic media were the same as those in the isotonic solution. Following 30 to 60 sec after applying the hypotonic media to the egg, the inward current was evoked. This inward current was eliminated by $100{\mu}M$ 4-acetamido-4'-isothiocyanostil-bene-2,2'-disulfonic acid(SITS), an anion channel blocker, leaving the small outward current component. Further addition of 2mM $Ba^{2+}$, a broad $K^+$ channel blocker, completely abolished the small outward current left even in the presence of SITS during hypotonic stress. These results suggest that $K^+$ and $Cl^-$ move out of cells, resulting in RVD. To test the involvement of $Na^+$ in RVD, 20mM Na-isethionate was substituted for mannitol in isotonic media(135mM $Na^+$) and Na-isethionate (20mM) was freed the hypotonic solution. Only $Cl^-$ concentration in both isotonic and hypotonic media was kept constant at 115mM, whereas concentration of $Na^+$ was lowered in hypotonic solution to 115mM from 135mM in isotonic solution. Hypotonic medium induced the outward current in the egg equilibrated isotonically. This current was reduced by $100{\mu}M$ SITS but was augmented by 2 mM $Ba^{2+}$. In terms of RVD, these results imply that $Cl^-$ efflux is coupled with $K^+$, maybe for electroneutrality during hypotonic stress and/or with $Na^+$ via unknown transport mechanism(s). From the overall results, the hypotonic stress facilitates the movement of $Cl^-$ and $K^+$ out of the hamster egg to regain cellular volume with electroneutrality. If there exist a difference in $[Na^+]_0$ between isotonic and hypotonic solution, another transport mechanism concerned with $Na^+$ may, at least partly, participate in regulatory volume decrease.