• Title/Summary/Keyword: Ion-beam treatment

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Characterion of Calcium Phosphate Films Grown on Surgicl Ti-6AI-4V By Ion Beam Assisted Deposition

  • Lee, I-S.;Song, J-S.;Choi, J-M;Kim, H-E.
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.30-36
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    • 1998
  • The plasma-spray technique is currently the most frequently used method to produce calcium phosphate coatings. Hydroxyapatite(HAp), one form of calcium phosphate, is preferred by its ability to form a direct bond with living bone, resulting in improvements of implant fixation and faster bone healing. Recently, concerns have been raised regarding the viable use and long-term stability of plasma-spray HAp coatings due to its nature of comparatively thick, porous, and poor bonding strength to metal implants. Thin layers (maximum of few microns) of calcium phosphate were formed by an e-beam evaporation with and without ion bombardments. The Ca/P ration of film was controlled by either using the evaporants having the different ration of Ca/P with addition of CaO, or adjusting the ion beam assist current. The Ca/P ration had great effects on the structure formation after heat treatment and the dissolution bahavior. The calcium phosphate films produced by IBAD exhibited high adhesion strength.

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Adhesion Properties between Polyimide Film and Copper by Ion Beam Treatment and Imidazole-Silane Compound (이온빔 및 이미다졸-실란 화합물에 의한 폴리이미드 필름과 구리의 접착 특성)

  • Kang, Hyung Dae;Kim, Hwa Jin;Lee, Jae Heung;Suh, Dong Hack;Hong, Young Taik
    • Journal of Adhesion and Interface
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    • v.8 no.1
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    • pp.15-27
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    • 2007
  • Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

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Low Temperature Deposition and Characteristics of ATO Thin Films by Ion Beam Sputtering (이온빔 스퍼터링법에 의한 ATO박막의 저온 증착 특성)

  • Koo, Chang-Young;Lee, Hee-Young;Hong, Min-Ki;Kim, Kyung-Joong;Kim, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.307-310
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    • 2000
  • Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

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Work Function Changes on MgO Protective Layer after O2plasma Treatment from Ion-induced Secondary Electron Emission Coefficient (산소 플라즈마 처리후의 이차전자방출계수(γ)를 이용한 MgO 보호막의 일함수(φW) 변화)

  • Jeong, Jae-Cheon;Yu, SeGi;Cho, Jaewon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.3
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    • pp.259-263
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    • 2005
  • The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.

The characteristics of AlN buffered GaN on ion beam modified Si(111) substrates (Si(111) 위에 Ion beam 처리 후 AlN layer를 완충층으로 이용하여 성장시킨 GaN의 특성)

  • Kwang, Min-Gu;Chin, Jeong-Geun;Lee, Jae-Seok;Oh, Seung-Seok;Hyun, Jin;Byun, Dong-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.99-99
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    • 2003
  • The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

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EFFECT OF ION BEAM ASSISTED CLEANING ON ADHESION OF ALUMINIUM TO POLYMER SUBSTRATE OF PC AND PMMA

  • Kwon, Sik-Chol;Lee, Gun-Hwan;Lee, Chuel-Yong;Gob, Han-Bum;Lim, Jun-Seop;Goh, Sung-Jin
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.428-432
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    • 1999
  • As metallic surface has its unique lustrous appearance and optical reflectance in visible range of light, the metallization of plastic surface has been an essential drive toward weight reduction for fuel economy and decorations in transportation industry and has been put into practiced from wet chemical-electrochemial to dry vacuum process in view of an environmental effect. Electron-beam metallization was used in this work with an aim at improving the scratchproof surface hardness of plastic substrate with metallic finish character. Thin film of Al ($1000\AA$) and $SiO_2$($7000\AA$) were metallized on substrate of PC and PMMA and the films were evaluated by pencil test for surface hardness and by cross-cut tape test for adhesion. The ion beam treatment improved around twice as hard as non-treat surface. The ion beam is effect on its hardness and adhesion to surface hardened PC substrate.

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Development of Nano Stage for Ultra High Vacuum (진공용 나노스테이지 개발)

  • 홍원표;강은구;이석우;최헌종
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.04a
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    • pp.472-477
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    • 2004
  • Miniaturization is the central theme in modern fabrication technology. Many of the components used in modem products are becoming smaller and smaller. The direct write FIB technology has several advantages over contemporary micromachining technology, including better feature resolution with low lateral scattering and capability of mastless fabrication. Therefore, the application of focused ion beam(FIB) technology in micro fabrication has become increasingly popular. In recent model of FIB, however the feeding system has been a very coarse resolution of about a few ${\mu}{\textrm}{m}$. It is not unsuitable to the sputtering and the deposition to make the high-precision structure in micro or macro scale. Our research is the development of nano stage of 200mm strokes and l0nm resolutions. Also, this stage should be effectively operating in ultra high vacuum of about 1$\times$10$^{-5}$ pa. This paper presents the concept of nano stages and the discussion of the material treatment for ultra tush vacuum.

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A Study on the Dosimetry of the Total Skin Electron Beam Therapy in Cutaneous T-Cell Lymphoma (피부 T 세포림프종의 전 피부 전자선 치료를 위한 dosimetry 연구)

  • 신교철;윤형근
    • Progress in Medical Physics
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    • v.7 no.2
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    • pp.57-65
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    • 1996
  • Total Skin Electron Beam Therapy (TSEBT) is one of the most effective treatment methods for superficially disseminated skin cancer or cutaneous T-cell lymphoma. We have treated a patient with cutaneous T-cell lymphoma. We have used Stanford technique using six dual field. The nominal energy of electron beam was 4MeV. SSD was 390cm and the gantry angles of dual fields were 76$^{\circ}$ and 104$^{\circ}$. The dose profiles of single field and dual fields were measured with films and a Farmer type ion chamber. The field uniformity was 10% over the patient's surface. During treatment, the patient was placed in six different positions for homogenous dose distribution over the body surface. The areas not directly exposed to the path of the electron beam (soles of feet, perineum and vertex of scalp) were boosted with 7MeV electron beam. During the treatment, lens, fingernails and toenails were shielded.

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Study on super-hydrophobic electro-spray micro thruster and measurement of micro scale thrust (초소수성 전기 분무 마이크로 추진 장치 및 마이크로 추력 측정)

  • Lee, Young-Jong;Yoo, Yong-Hoon;Tran, Si Bui Quang;Kim, Sang-Hoon;Park, Bae-Ho;Buyn, Do-Young
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.37 no.2
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    • pp.175-180
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    • 2009
  • In this article, we fabricated polytetrafluoroethylene(PTFE) nozzle treated by ion beam, in order to fabricate polymer based electrospray micro thruster with super hydrophobic nozzle. To obtain the super hydrophobic surface, PTFE surface is treated by argon and oxygen plasma treatment process. The optimal condition is investigated argon and oxygen flow rate as well as the paalied energy level for the treatment process. Fabricated nozzle was evaluated by measuring contact angle, and the surface morphology was examined by using scanning electron microscope(SEM) and atomic force microscope(AFM). We observe that jetting becomes more stable and repeatable on the treated nozzle. And to evaluate performance of fabricated nozzle, we measure micro scale thrust using a cantilever and a nozzle treated by ion beam laser displacement sensor.