• Journal of Powder Materials
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• v.27 no.6
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• pp.449-457
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• 2020

Iron and copper are practically immiscible in the equilibrium state, even though their atomic radii are similar. As non-equilibrium solid solutions, the metastable Fe-Cu alloys can be synthesized using special methods, such as rapid quenching, vapor deposition, sputtering, ion-beam mixing, and mechanical alloying. The complexity of these methods (multiple steps, low productivity, high cost, and non-eco-friendliness) is a hinderance for their industrial applications. Electrical explosion of wire (EEW) is a well-known and effective method for the synthesis of metallic and alloy nanoparticles, and fabrication using the EEW is a simple and economic process. Therefore, it can be potentially employed to circumvent this problem. In this work, we propose the synthesis of Fe-Cu nanoparticles using EEW in a suitable solution. The powder shape, size distribution, and alloying state are analyzed and discussed according to the conditions of the EEW.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.54-58
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• 1999

We deposited diamond-like carbon (DLC) films using ion beam sputtering of a graphite target on flat substrates for use as a thin film field emitter. An n-type silicon wafer, titanium-coated silicon, and indium tin oxide (ITO) coated glass were used as a substrate. All films exhibited a sudden increase in the emission after a breakdown occurred at high voltage. The morphology of the films after the breakdown depended on the substrate. On ITO and Ti substrates, the DLC film peeled off upon breakdown, but on the Si substrate the surface melting due to breakdown resulted in the formation of various structures such as a sharp point, mound, and crater. By scanning the deformed surface with a tip anode, we found that the emission was concentrated at the deformed sites, indicating that the field enhancement due to the morphology change was responsible for the increased emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.59-62
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• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.142-146
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• 2009

The soft magnetic property for the Corning glass/Ta(5 nm)/[Conetic, Permalloy)/Ta(3 nm) prepared by the ion beam deposition sputtering was investigated. The coercivity and saturation magnetic field of conetic (NiFeCuMo) and permalloy (NiFe) layer with easy and hard direction along to the applying magnetic field during deposition was compared with each other. The surface resistance of conetic film with a thickness of 10 nm was 2 times lower than one of permalloy film. The coercivity and the magnetic susceptibility of conetic film decreased and increased 3 times to one of permalloy film, respectively. These results suggest that a highly sensitive GMR-SV or MTJ using conetic film can be possible to develop the bio-device.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.333-333
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• 2011

We studied the H/D exchange kinetics of pure and acid dopped water-ice film by using the techniques of reactive ions scattering (RIS) and low energy sputtering (LES) with low kinetic energy cesium ion beam (<35 eV). From RIS, neutral water isotopomers were detected in the form of cesium-molecule ion clusters, $CsX^+$ (X= $H_2O$, HDO, $D_2O$). Ionic species, like $H_3O^+$, $DH_2O^+$, $D_2HO^+$, $D_3O^+$, adsorbed on the surface were ejected via LES process. Those techniques allowed us to trace the isotopomeric populations of water-ice film. To show the catalytic effect of excess proton in the H/D exchange reaction, our study was conducted with two types of water-ice films. In film 1, about 0.5 BL of $H_2O$ was adsorbed on HCl (0.1 ML) dopped $D_2O$ (8 BL) film. In film 2, similar amount of $H_2O$ used in film 1 was adsorbed on pure $D_2O$ film. Kinetic data were obtained from each film type for 90-110 K (film 1) and 110-130 K (film 2) and fitted with numerically integrated lines. Through the Arrhenius plot of kinetic coefficient deduced from fitting of the H/D exchange reaction, the activation energy of film 1 and 2 were estimated to be $10{\pm}3kJmol^{-1}$ and $17{\pm}4kJmol^{-1}$. This activation barrier difference could be understood from detailed pictures of H/D exchange. In film 2, both the formation of ion pair, $H_3O^+$ and OH. and proton transfer were needed for the H/D exchange. However, in film 1, only proton transfer was necessary but ion pair formation was not, so this might reduce the activation energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.520-527
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• 2006

A realistic surface model is presented for prediction of various surface phenomena such as polymer deposition, suppression and sputtering as a function of incidence ion energy in high density fluorocarbon plasmas. This model followed ion enhanced etching model using the "well-mixed" or continuous stirred tank reactor (CSTR) assumption to the surface reaction zone. In this work, we suggested ion enhanced polymer formation and decomposition mechanisms that can capture $SiO_2$ etching through a steady-state polymer film on $SiO_2$ under the suppression regime. These mechanisms were derived based on experimental data and molecular dynamic simulation results from literatures. The model coefficients are obtained from fits to available beam and plasma experimental data. In order to show validity of our model, we compared the model results to high density fluorocarbon plasma etching data.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.309-316
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• 2014

A large particle accelerator requires an ultrahigh vacuum (UHV) system of average pressure under $1{\times}10^{-7}$ Pa for mitigating the impact of beam scattering from the residual gas molecules. The surface inside the beam ducts should be controlled with an extremely low thermal outgassing rate under $1{\times}10^{-9}Pa{\cdot}m^3/(s{\cdot}m^2)$ for the sake of the insufficient pumping speed. To fulfil the requirements, the aluminum alloys were adopted as the materials of the beam ducts for large accelerator that thanks to the good features of higher thermal conductivity, non-radioactivity, non-magnetism, precise machining capability, et al. To put the aluminum into the large accelerator vacuum systems, several key technologies have been developed will be introduced. The concepts contain the precise computer numerical control (CNC) machining process for the large aluminum ducts and parts in pure alcohol and in an oil-free environment, surface cleaning with ozonized water, stringent welding process control manually or automatically to form a large sector of aluminum ducts, ex-situ baking process to reach UHV and sealed for transportation and installation, UHV pumping with the sputtering ion pumps and the non-evaporable getters (NEG), et al. The developed UHV technologies have been applied to the 3 GeV Taiwan Photon Source (TPS) and revealed good results as the expectation. The problems of leakage encountered during the assembling were most associated with the vacuum baking which result in the consequent trouble shootings and more times of baking. Then the installation of the well-sealed UHV systems is recommended.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.77-82
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• 2000

A surface of polytetrafluoroethylene(PTFE) was modified with changing ion doses by 1 keV $Ar^+$ ion irradiation and Cu films having thickness $5000\;{\AA}$ were deposited on the modified PTFE. The SEM study showed that the surface texture of modified PTFE was in the form of cones whose height increased depending on ion doses. Through XPS spectra, it was found that the intensity of F ls peaks decreased with ion doses by preferential sputtering of F atoms and the C-C and / or C-F chains were formed by the crosslinking in the newly unstable chains. Cu films were deposited uniformly along the filaments formed on the modified PTFE. In x-ray diffraction (XRD) spectra of deposited Cu films on modified PTFE, a preferred orientation along (111) and (200) planes was found and the peak intensity of (111) plane increased as surface roughness of modified PTFE increased. The resistivity of Cu films was changed from $2.7{\mu}{\Omega}cm$ of unmodified PTFE to $4.3{\mu}{\Omega}cm$ of modified PTFE at ion dose of $1{\times}10^{16}/\textrm{cm}^2$ and the abrupt increase of resistivity in the modified PTFE at ion dose of $1{\times}10^{17}/\textrm{cm}^2$ was due to being cut off the film which resulted from the increased surface roughness.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.59-64
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• 2004

We investigated the soft magnetic properties of nanocrystalline Fe-Al-O film as etching the oxide film with ion beam etching method. It is thought that the grain size of Fe-Al-O film increases as the thickness decreases. The coercivity and squareness increase with decreasing thickness. The surface curvature of Am images increases when the etching experiment proceeds. This phenomena could be due to the grain growth which occurs during sputtering. This grain growth could be assisted by the the plasma energy during sputtering. Therefore proper thickness should be searched to acquire the good soft magnetic properties for the nanocrystalline film material. Good soft magnetic properties of Fe-Al-O film was acquired at the thickness of more than 900 nm.