• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.518-523
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• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.409-414
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• 1999

The influence of ion beam energy and reactive oxygen partial pressure on the electrical and crystallographic characteristics of transition metal oxide compound(Cr0x) film was studied in this paper. Chromium oxide films were prepared onto the coverglass using Ion Beam Sputter Deposition(1BSD) technique according to the processing conditions of the partial pressure of reactive oxygen gas and ion beam energy. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. As results, according to the XRD, XPS and resistivity measurement, the deposited films were the cermet type films which has a crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increasernent of the ion b m energy during the deposition process happened to decreasernent of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.361-364
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by reactive ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to 1500 $\AA$ or 2000$\AA$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from 40$0^{\circ}C$ to 80$0^{\circ}C$ in flowing $O_2$or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.307-310
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1025-1032
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• 2000

산화분위기에서의 반응성 이온빔 스퍼터링법으로 Sn과 Sb 금속 타겟을 사용하여 실온에서 ATO 박막을 증착하였다. Sb 첨가량, 박막의 두께 및 열처리가 ATO 박막의 전기적 특성과 광학적 특성에 미치는 효과를 연구하고자 하였다. 제조된 ATO 박막의 두께는 약 1500$\AA$과 1000$\AA$으로 조절하였으며, Sb 농도는 10.8wt% 또는 14.9wt%임이 XPS 분석에 의하여 확인되었다. 증착한 박막의 열처리는 40$0^{\circ}C$~$600^{\circ}C$의 온도범위에서 산소 또는 forming gas(10% H$_2$-90% Ar) 분위기에서 30분간 수행하였다. 이렇게 제조된 ATO 박막은 Sb의 첨가량, 두께 및 열처리 조건에 따라 다양한 전기 비저항 값과 가시광선 대역에서의 광투과도를 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.175-175
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• 2009

최근 전자 소자의 소형화 집적화에 따른 대응 방안으로 한 개의 소자에 두가지 이상의 물리적 특성을 갖는 다기능성 소재의 개발에 많은 연구가 진행되고 있다. 다강체는 강유전성 (ferroelectricty ), 강자성 (ferromagnetism), 강탄성 (ferroelasticity) 중에서 두 개 이상의 현상을 나타내는 재료로, 이중에서도 특히 강유전성과 강자성을 동시에 나타내는 다강체가 학계 및 산업계로부터 집중적인 관심을 받으면서 최근 이 분야 연구가 국내 외적으로 매우 활발하게 이루어지고 있다. 이는 다강체를 이용하면 기존의 강유전 현상을 이용한 메모리소자인 FRAM이나 차세대 메모리소자로 주목을 받고 있는 MRAM을 결합한 새로운 방식의 메모리소자의 탄생이 가능할 수도 있기 때문이다. 즉, 일부 다강체가 나타내는 magnetoelectric (ME) 현상을 이용하면 자기적으로 신호를 인가하여 전기신호로 데이터를 저장하거나 또는 전기적으로 신호를 인가하여 자기적으로 데이터를 저장하는 것이 가능해지기 때문이다. 이 연구에서는 다강체 특성을 가지는 $Fe/BaTiO_3$ 이중박막을 IBSD(Ion Beam Sputter Deposition)을 이용하여 (111)Pt/Ti/$SiO_2/Si$ 기판에 증착을 하여 구조적, 전기적, 자기적 특성을 토론할 것이다.