• 소성∙가공
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• 제21권6호
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• pp.354-359
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• 2012

Effects of a nitriding treatment on the tensile and high cycle fatigue properties were investigated by conducting ion-nitriding and gas nitro-caburizing treatments on the spheroidized SCr430B medium-carbon steel and performing tensile and tension-tension high cycle fatigue tests. The nitrided samples showed much lower strength and ductility compared to those in the initial as-spheroidized state and premature fracture occurred at the hardened layers. The micro-voids in the compound layer caused fatigue crack initiation. Thus, the removal of the compound layer with micro-voids remarkably improved the fatigue resistance to even beyond that of the as-spheroidized sample.

• 열처리공학회지
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• 제9권2호
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• pp.130-138
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• 1996

It has been investigated that the ion nitriding effects of a STD61 steel in various time conditions of 3 to 9 hours, and the microstructure of compound and diffusion layers of the ion nitrided specimen for 6 hours and subsequently reheated for 1 hour at various temperatures of $400{\sim}800^{\circ}C$ As the nitriding time increased, the thickness of compound and diffusion layers was increased, but the hardness of surface was not considerably increased (Max Hv=1045 at 9hrs). Some of the nitrogen was denitrided out of the surfac and diffused into the core, and also the oxides ($Fe_3O_4$, $Fe_2O_3$) were formed on the surface of the specimen during reheating. The compound layer was partially decomposed at about $600^{\circ}C$ but the diffusion layer was increased up to $800^{\circ}C$. With increasing reheated temperture, the hardness of the surface was decreased, whereas the hardness depth of diffusion layer (0.25mm) was increased up to $600^{\circ}C$ more than that of ion nitrided (0.18mm). The blend-heat treated STD61 steel by ion nitriding is therefore expected to hold on the characteristics of ion nitriding up to $600^{\circ}C$.

• 한국결정성장학회지
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• 제11권5호
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• pp.224-230
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• 2001

초박막 게이트 유전막 및 비휘발성 기억소자의 게이트 유전막으로 연구되고 있는 $NO/N_2O$ 열처리된 재산화 질화산 화막의 특성을 D-SIMS(Dynamic Secondary Ion Mass Spectrometry), ToF-SIMS(Time-of-Flight Secondary Ion Mass Spectrometry), AES(Auger Electron Spectroscopy)으로 조사하였다. 시료는 초기산화막 공정후에 NO 및 $N_2O$ 열처리를 수행하였으며, 다시 재산화공정을 통하여 질화산화막내 질소의 재분포를 형성토록하였다. 재산화에 있어서 습식산화시 공정에 사용된 수소에 의한 영향으로 계면 근처에 축적된 질소가 Si≡N 결합을 쉽게 이탈함에 따라 방출이 촉진되어 건식산화에 비하여 질소의 감소가 더욱 두드러지게 나타났다. 재산화에 따른 질화산화막내 질소의 거동은 외부로의 방출과 기판으로의 확산이 동시에 나타난다. 재산화후 질화산화막내 축적된 질소의 결합종을 분석한 결과, 초기산화막 계면근처의 질소는 SiON의 결합종이 주도적으로 나타나는 반면 재산화 후 새롭게 형성된 $Si-SiO_2$ 계면근처로 확산한 질소는 $Si_2NO$ 결합종이 주로 검출된다. SiON에 의한 질소의 미결합손과 $Si_2$NO에 의한 실리콘의 미겨랍손은 기억특성에 기여하는 결함을 포함하기 때문에 재산화 질화산화막내 존재하는 SiON과 $Si_2$NO 결합종은 모두 전하트랩의 기원과 관련된 결합상태로 예상된다.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• 열처리공학회지
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• 제14권1호
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• pp.27-34
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• 2001

The effects of pre-heat treatment(Q/T) on microstructure and hardness of STD11 and STD61 tool steel nitrided by micro-pulse plasma were investigated. The quenching temperature for obtaining matrix hardness of STD11 and STD61 steel on range of HRC 50 to HRC 60 desired for machine parts is about $1070^{\circ}C$ and $1020^{\circ}C$ respectively. The hardness of STD11 and STD61 quenched at the temperature was HRC 63 and HRC 56 respectively. The nitrided case depth of STD11 and STD61 nitrided at $550^{\circ}C$ for 5 hours was independent of pre-heat treatment condition and the depth was approximately $100{\mu}m$. However, hardness and compactness of nitrided layer on Q/T treated specimen were higher than the annealed specimen. The case depth increased linearly with the increase of nitriding temperature, however, the hardness of nitrided layer decreased with the increase of temperature. Phase mixture of ${\gamma}-Fe_4N$ and ${\varepsilon}-Fe_{2-3}N$ was detected by XRD analysis in the nitrided layer formed at the optimum nitriding condition. The optimum nitriding temperature was approximately $490^{\circ}C$ which was $10^{\circ}C$ lower than the tempering temperature for preventing softening behavior of STD11 and STD61 matrix during nitriding process and the surface hardness of nitrided layer obtained by optimum pre-heat treatment condition was about Hv1400.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.177-179
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• 2011

The purpose of this study is to enhance an adhesion between substrate and Diamond-like Carbon (DLC) film. DLC has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion because of weak bonding between DLC film and the substrate. For improvement adhesion, a layer between DLC film and the substrate was prepared by dual post plasma. DLC film was deposited on nitrided layer by linear ion source. The composed compound layer between substrate and DLC film was investigated by Glow Discharge Spectrometer (GDS) and Scanning Electron Microscope (SEM). The synthesized bonding structure of DLC film was analyzed using a micro raman spectrometer. Mechanical properties were measured by nano-indentation. In order to clarify the mechanism for improvement in adhesive strength, it was observed by scratch test.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.58-59
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• 2012

Surface hardening mechanism of H13 steel was investigated when ion niriding after shot peening process was applied. Severe plastic deformation induced nanocrystallized grains at surface region. Higher nitrogen concentration was achieved in ion nitrided specimen with shot peening treatment than in single nitrided specimen. The elemental mapping on chromium and nitrogen by TEM-EELs showed chromium dissolved in matrix enhanced bulk nitrogen diffusion at surface region. Higher nitrogen diffusion also caused lattice distortion. Nano-sized grains, higher nitrogen concentration, and lattice diffustion contributed to the surface hardening.

• 한국표면공학회지
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• 제43권2호
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• pp.91-96
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• 2010

SCM440 steels were nitrided using pulsed dc plasma combined with inductively coupled plasma (ICP) generated by 13.56 MHz rf power in order to enhance case hardening depth. The case hardening depth was increased with rf power. The effective case-depth with ICP at 900 watt was as 1.6 times as that nitrided without ICP. The hardening depth was also increased up to 1.45 times. The compound layers formed on top surface were dense and thin when pulsed dc plasma was combined with ICP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• 대한조선학회지
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• 제27권2호
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• pp.47-54
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• 1990

본 연구에서는 이온질화처리한 SM45C강의 피로파괴거동, 피로크랙진전거동 및 부식피로파괴거동에 관한 $N_2:H_2$가스조정비와 이온질화처리시간에 대한 효과를 조사하였다. 실험에 사용된 모든 종류의 시험편의 피로한도와 부식피로강도는 $N_2$가스와 처리시간에 비례하여 증가하였다. 무처리 시험편에 비해 이온질화처리시험편은 피로한도 및 부식피로강도가 $10^7$싸이클의 공기중에서 $24{\sim}29%$, $10^6$싸이클의 3% NaCl 수용액 중에서는 $32{\sim}48%$ 증가하였다. 반복압축-인장하중을 받는 SM45C강은 이온질화처리시험편이 무처리시험편에 비해 피로한도 및 부식피로강도가 $10^6$싸이클의 공기중에서 $24{\sim}29%$증가하였고, 3% NaCl 수용액중과 수도물중에서 $32{\sim}48%$의 증가를 보였다. 이온질화처리한 SM45C강은 무처리시험편에 비해 낮은범위의 ${\Delta}K$ 영역에서는 균열진전속도가 느리고, 높은 ${\Delta}K$ 영역에서는 빨라졌다.