• Title/Summary/Keyword: Ion sputtering

Search Result 602, Processing Time 0.021 seconds

A Study on the Shape of the Pattern Milled Using FIB (집속이온빔 연마에 의한 패턴의 형태에 관한 연구)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.27 no.11
    • /
    • pp.679-685
    • /
    • 2014
  • For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

FIB Machining Characteristic Analysis according to $Ga^+$ Ion Beam Current (집속이온빔의 전류변화에 따른 미세가공 특성분석)

  • Kang, Eun-Goo;Choi, Byeong-Yeol;Hong, Won-Pyo;Lee, Seok-Woo;Choi, Hon-Zong
    • Transactions of the Korean Society of Machine Tool Engineers
    • /
    • v.15 no.6
    • /
    • pp.58-63
    • /
    • 2006
  • FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\Phi}10nm$ and smaller is available. Since general FIB uses very short wavelength and extremely high energy, it can directly make a micro structure less than $1{\mu}m$. As a result, FIB has been probability in manufacturing high performance micro devices and high precision micro structures. Until now, FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis, IC error correction, etc. In this paper FIB-Sputtering and FIB-CVD characteristic analysis were carried out according to $Ga^+$ ion beam current that is very important parameter for minimizing the pattern size and maximizing the yield. Also, for FIB-Sputtering burr caused by redeposition of the substrate characteristic analysis was carried out.

3D Plasma simulation을 이용한 Cylindrical Rotating Magnetron Sputtering Cathode 개발

  • Cheon, Yong-Hwan;O, Ji-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.179.1-179.1
    • /
    • 2013
  • Cylindrical Rotating Magnetron Sputtering Cathode (이하 Rotary Cathode)는 기존에 사용 되던 rectangular type 보다 Target 사용 효율이 높다는 큰 이점을 가지고 있다. 높은 Target 사용 효율은 비용 절감 효과와 직접적으로 관련 된다. 이번 연구는 3D Plasma simulation(PIC-MCC)을 통한 Target 사용 효율 80% 이상의 Rotary Cathode 개발을 목적으로 한다. Plasma simulation에 External Magnetic fields를 접목하여 Electron의 이동 궤적을 제어하였고, 생성된 Ion (Ar+)의 밀도 및 속도로 Plasma의 안정성과 Erosion 계산 구간을 선정 하였다. Target Erosion Profile은 Sputtering yield Data와 Target에 충돌한 Ion 정보를 사용하여 산출 하였으며, Sputtered Particles의 Deposition Profile은 계산된 Target Erosion Profile과 The cosine law of emission을 이용하여 계산 하였다. 실험 조건은 Plasma simulation의 초기조건 바탕으로 하여 2G size의 ITO Target을 대상으로 실험 하였다. 비 Erosion 영역 최소화하기 위해 Magnet Length를 변경하여 제작 적용 하였다. Simulation 계산 시간의 제약으로 인하여 simulation에서 생성된 최대 이온 밀도는 일반적으로 알려진 값 보다 적게 계산 되었지만, Simulation으로 예측한 Erosion Profile 및 Deposition Profile은 실험 값과 유사한 형태를 나타났으며, 실험 결과는 Target 사용 효율 80%이상의 결과를 보였다.

  • PDF

THE EFFECT OF AN APPLIED BIAS UPON THE REFLECTANCE AND ADHESION OF SILVER FILMS BEING SPUTTER-DEPOSITED ON POLYESTER SUBSTRATE

  • Ri, Eui-Jae;Hoang, Tae-Su
    • Journal of the Korean institute of surface engineering
    • /
    • v.32 no.3
    • /
    • pp.257-264
    • /
    • 1999
  • Thin reflective films are synthesized by using PVD methods with a bright metal of Al or Ag. For purposes of improving the reflectance and adhesion of such films particularly, substrate bias was applied during sputtering (namely, ion-plating) to enhance the deposition process with higher energy. And we succeeded in fabricating a quality silver film which possesses an adhesion of $85{\;}Kg/\textrm{cm}^2$ and a high reflectivity of more than 96%. Both of reflectivity and adhesion are better in case of bias sputtering as controlled than nonbias sputtering, particularly the bias of 50-100 V showed most effective. The microstructures of sample films were examined by using various equipments and the XRD spectrum in particular showed that <111> direction is the preferred growth orientation.

  • PDF

Process Diagnosis of Reactive Deposition of MgO by ICP Sputtering System (유도결합 플라즈마 스퍼터링 장치에서 MgO의 반응성 증착 시 공정 진단)

  • Joo, Junghoon
    • Journal of the Korean institute of surface engineering
    • /
    • v.45 no.5
    • /
    • pp.206-211
    • /
    • 2012
  • Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

Hydrogen ion effect on the formation of DLC thin film by negative carbon ion beam (탄소 음이온빔으로 증착되는 DLC 박막 제조에 미치는 수소 이온의 영향)

  • 한동원;김용환;최동준;백홍구
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.10 no.4
    • /
    • pp.324-329
    • /
    • 2000
  • We investigated the effect of hydrogen ion beam on the formation of DLC thin film, which is deposited on the Si substrate with negative carbon ion by $Cs^+$ ion sputtering and positive hydrogen ion by Kauffmann type ion source. The amount of hydrogen in the DLC films increased as increasing hydrogen gas flow rate from 0 sccm to 12 sccm. As increasing hydrogen flow rate, $sp^2$bonding structure increased. The reason is that the hydrogen ions have relatively high energy, although total amount of hydrogen is very small compared with that of CVD process. These results suggest that the physical energy transfer plays a dominant role on the formation of DLC film.

  • PDF

'AMADEUS' Software for ion Beam Nano Patterning and Characteristics of Nano Fabrication ('아마데우스' 이온빔 나노 패터닝 소프트웨어와 나노 가공 특성)

  • Kim H.B.;Hobler G.;Lugstein A.;Bertagonolli E.
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2005.10a
    • /
    • pp.322-325
    • /
    • 2005
  • The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

  • PDF

Effect of surface roughness onto the scattering in low loss mirrors (기판의 표면거칠기와 반사경 산란에 대한 연구)

  • 조현주;신명진;이재철
    • Korean Journal of Optics and Photonics
    • /
    • v.13 no.3
    • /
    • pp.209-214
    • /
    • 2002
  • The effect of surface roughness on mirror scattering has been studied. Five kinds of substrates with different surface roughness were fabricated. On those substrates, a dielectric multi-layer coating with high reflectivity was deposited by ion beam sputtering and electron beam evaporation. A total integrated scattering measurement set-up was built for the evaluation of deposited samples. Most of the ion beam sputtered mirrors showed lower scattering than the electron beam evaporated one, which deposited on substrates similar in surface roughness. Over ~2 $\AA$ in surface roughness, scattering strongly depend on the micro-structure of the super-polished surface. The lowest scattering we have achieved is 2.06 ppm by ion beam sputtering from the substrate with surface roughness of 0.23 $\AA$.

Properties of $TiO_2$ thin films deposited by ion-beam assisted reactive magnetron sputtering (이온빔 보조 반응이온 마그네트론 스퍼터링으로 증착된 $TiO_2$박막의 특성)

  • 김성화;이재홍;황보창권
    • Journal of the Korean Vacuum Society
    • /
    • v.11 no.3
    • /
    • pp.141-150
    • /
    • 2002
  • Titanium oxide thin films were deposited by DC reactive magnetron sputtering(RMS) with Ar ion-beam assistance using end-Hall ion source at low oxygen partial pressure and long target-to-substrate distance. The optical and structural properties of deposited films were investigated by the measurement of measured transmittance and reflectance, atomic force microscope(AFM), and X-ray diffraction(XRD). The results show that the Ax ion-beam assisted RMS for titanium oxide thin films induces the higher packing density, lower absorption, and smoother surface than the conventional RMS, suggesting that it can be employed in deposition of optical dielectric coatings.