• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.156-157
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• 1998

It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.176-182
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• 2002

Amorphous $TiO_2$ thin films were deposited on glass substrates by ion beam sputtering in which the ratio of $O_2$/Ar gas used as discharged gas was varied from 0 to 2. After optical and microstructure properties and chemical composition of thin films was analyzed, antireflection coating layers were fabricated with $SiO_2$/$TiO_2$ multi-layers. Thin films deposition was performed at room temperature and ion beam voltage and ion current density for sputtering of target were fixed at 1.2 kV and 200 $\mu\textrm{A}/\textrm{cm}^2$, respectively. Refractive indexs of the deposited $TiO_2$films were 2.40-2.45 at a wavelength of 633 nm. $TiO_2$films had high transmission and stoichiometry when ratio of $O_2$/Ar was 1. Rms roughness of deposited $TiO_2$ film was below 7 $\AA$. In excessive $O_2$ environments, however Rms roughness increased over 50 $\AA$. Transmittance decreased by scattering of rough surface. Reflectance of $SiO_2$/$TiO_2$multi-layers was below 1% in visible light.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.2
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• pp.291-299
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• 2004

DLC films were deposited using the ECR-PECVD method with the fixed deposition condition, such as ECR power, methane and hydrogen gas-flow rates and deposition time, for various substrate bias voltage. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristic of the films were analyzed using the FTIR, Raman, and UV/Vis spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio(ID/IG) of the D and G peak was increased as the substrate bias voltage increased and films hardness was increased. Optical transmittances of DLC film were decreased with increasing deposition time and substrate bias voltage. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.573-574
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• 2013

본 연구에서는 Roll-to-Roll 스퍼터를 이용한 ITO 성막 공정에서 Ar 이온 빔 처리가 플렉시블 ITO 박막의 전기적, 광학적, 구조적 특성에 미치는 효과를 연구하였다. Roll-to-Roll 스퍼터를 이용하여 ITO 박막을 성막할 때 Linear ion source를 이용하여 Ar 이온을 ITO 박막에 직접 조사할 때 일어나는 ITO 박막의 변화를 분석하였다. Ar 이온 빔에 인가되는 DC 파워 변화에 따른 ITO 박막의 전기적, 광학적 특성 변화를 Hall measurement 및 UV/Visible spectrometry 분석법을 통해 확인하였다. 이온 빔 처리 공정 시 인가되는 파워가 DC 100 W일 때 $5.81{\times}10^{-4}{\Omega}-cm$으로 이온 빔 처리를 하지 않은 $1.14{\times}10^{-3}{\Omega}-cm$에 보다 낮은 비저항을 나타냄을 확인할 수 있었다. 이온 빔 처리 전/후 ITO 박막의 결정성은 포항 가속기 X-ray scattering법을 이용하여 분석하였으며, 결과를 통해 Ar 이온 빔 처리가 ITO 박막의 표면에서의 국부적인 결정성을 향상을 일으킴을 알 수 있었다. 이러한 결정성 향상이 Roll-to-Roll 스퍼터된 ITO 박막의 전기적 특성을 향상과 매우 밀접한 관계가 있음을 확인할 수 있었다. 또한 이온 빔 처리 전/후 ITO/CPI의 기판 휨에 따른 기계적 안정성을 알아보기 위해 bending frequency 60 Hz, bending radius 15mm로 bending test를 진행을 통하여 이온 빔 처리 전후 ITO 박막의 특성을 비교 확인하였다. 본 실험 결과를 통해 Ar 이온빔 조사에 의해 상온에서 결정형 ITO 박막을 CPI 기판위에 형성 할 수 있었다. 또한 최적화된 ITO 박막을 이용하여 유기 태양전지를 제작하였으며 이를 통해 Ar 이온빔 처리된 결정형 ITO의 유연 태양전지 응용 가능성을 타진하였다.

• Nuclear Engineering and Technology
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• v.24 no.1
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• pp.63-74
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• 1992

The resonant formation rates of muonic molecular ion dtr in the muon-catalyzed fusion are calculated in various fuel temperatures and densities. The elastic scattering cross sections between t$\mu$ and deuterons are obtained by making use of the partial wave method. The transition property of the excited compound molecule [(dt$\mu$)dee]＊ derived by the impulse approximation in the form of a bound-state form factor. The radiative, Auger, and collisional deexcitations are considered as the deexcitation mechanisms of the excited dt$\mu$, and each deexcitation width is calculated as well as back decay width. The resultant reaction widths are used to calculate the formation cross sections of resonant dt$\mu$. The resonant formation rates for dt$\mu$-d and dt$\mu$-t collisions are computed as functions of fuel temperature and density. The calculations show that the resonant formation rates increase with fuel densities and have the maximum values at the particular temperatures where the relative collision energies are equal to the resonant ones.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.328-334
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• 2000

DLC (Diamond-Like Carbon) films were deposited by ECR-PECVD (electron cyclotron resonance plasma-enhanced chemical vapor deposition) method with the variation of substrate bias voltage under the others are constant except it. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristics of the film were analyzed using the Dektak surface profiler, SEM, FTIR spectroscopy, Raman spectroscopy and Nano Indentation tester. FTIR spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio $(I_D /I_G)$ of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Korean Journal of Crystallography
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• v.17 no.2
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• pp.60-65
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• 2006

표면 및 계면층의 결정구조, 결함구조, 불순물 편석, 표면의 전자 구조, 원자 진동 등과 같은 산화물의 표면물성은 촉매, 센서, 소결, 마찰, 부식 등과 같은 분야에서 그 특성을 좌우한다. 고체 표면의 결정구조 해석 수단으로 저에너지 이온산란 분광법이 유용한 도구로 알려져 있는데, 이 방법의 뛰어난 표면민감성은 표면에서의 효과적인 이온 중성화 과정에 기인한다. $He^+$, $Ne^+$, $Ar^+$ 등과 같은 이온은 Auger 중성화 과정에 의하여 쉽게 중성원자화 되고, 중성화 확율의 타겟에 대한 의존성이 낮기 때문에 이온빔으로서 종종 사용된다. 산란각도를 180$^{\circ}$로 고정하여 산란이온 검출기를 설치한 직충돌 이온산란 분광법의 경우는 산란된 이온의 궤적이 입사궤도와 거의 동일하기 때문에 산란궤적의 계산이 간단해지고, 수 층 깊이의 원자구조의 해석이 가능해진다. 본 고에서는 고체 표면의 원자구조를 실공간에서 해석할 수 있는 직충돌 이온산란 분광법에 대하여 측정의 기본원리, 측정장치, 간단한 분석 예 등에 관하여 기술하고자 하며, 다음 편에서는 복잡한 표면구조를 가지는 반도체 표면에서 직충돌 이온산란분광법의 이용하여 해석한 예를 중심으로 기술하고자 한다.

• Carbon letters
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• v.1 no.1
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• pp.22-26
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• 2000

Raman spectroscopy has been used to investigate the structure of coal tar pitch heat-treated up to $3000^{\circ}C$ by using 514.5 run Ar ion laser line. Four critical temperature ranges were found on pyrolyzing coal tar pitch, which correspond to four distinct processes from disordered carbons to the well-ordered graphite structure. The range of heat treat temperature (HTT) below $1000^{\circ}C$ corresponds to gas evolution during the pyrolysis of coal tar pitch. Above the HTT are correlated to rearrangements of enlarged molecules, growth of the molecules along the direction of plane, finally stacking in the normal direction of the plane, in the respective HTT ranges of 1000-2000, above 2000 and $2500-3000^{\circ}C$.

• Journal of Environmental Science International
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• v.8 no.6
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• pp.639-643
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• 1999

After analyzing the correlation between air pollution and visibility, TSP and $NO_2$ is responsible for poor visibility in Pusan. After analyzing the correlation between meteorological factors and visibility, general pattern of humidity has clear negative correlation. The variation of wind speed has a positive correlation. In order to investigate the cause of poor visibility in Pusan area, the Andersen sampler and PM-2.5 are used to collect and analyze aerosol. This study was carried out to monitor the visibility using Forward scattering meter and to find out the characteristics and the cause of good visibility case and poor visibility case by measuring and analyzing a variety of parameters, such as particle size distributions, chemical compositions, and meteorological conditions in Pusan. According to the analysis of intensive sampling, $NO_3^-,NH_4^+$ ion concentration increased together with the mass concentration around $0.5\~2.5{\mu}m$ approximately during the case of poor visibility. $NH_4NO_3,\;NH_4Cl,\;and\;NaCl$ were thought to be the major components of fine particles.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.179-179
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• 1999

Cu3AU(100) 단결정은 fcc 구조를 가지고 있으며 (100)면은 Cu와 Au가 1:1로 존재하고 가운데(200)면은 Cu만 존재한다. 따라서 Au 층은 (100)면에서만 존재하여 각 Au층은 서로 0.5nm 떨어져 있다. 이와 같은 Cu3Au(100) 단결정을 MEIS(Medium Energy Ion Scattering Spectroscopy) 실험 장비를 사용하여 0.35nm 떨어져 있는 Single unit cell의 윗면과 아래면, 즉 첫 층의 Au와 셋째층의 Au의 층분리를 통해서, 온도 변화에 따른 Cu3Au(100) 단결정의 표면 물리적 현상인 surface induced disorder을 밝혀내고자 한다. 우선 두 Au층의 분리 시도는 수소이온을 이용한 실험 조건에서는 extremely glancing exit angle 등 극한의 산란조거에서도 성공하지 못하였다. 깊이 분해능을 정해주는 electronic energy loss를 극대화하기 위해 수소이온이 아닌 질소 이온을 사용하여 energy spectra를 측정해 본 결과 아래 그림에서와 같이 표면 Au 층과 표면 셋째 Au층을 구분할 수 있었다. <110>으로 align된 조건에서는 셋째층의 Au 원자들이 완전히 shadow cone 내부에 존재하여 관측되지 않지만 9.75$^{\circ}$ tilt 한 경우 셋째층의 Au 원자들이 shadow cone 바깥으로 나오게 되어 그림에서와 같이 첫째 층과 셋째 층이 확실히 분리되어 측정되었다. 이를 바탕을 Cu3Au(100)의 온도변화에 다른 order disorder and segregation 현상을 측정하였다. ordered Cu3Au(100)은 28$0^{\circ}C$ 근처에서 surface층이 먼저 disordered상으로 바뀌는 surface induced disorder 현상이 일어나고 bulk transition 온도 39$0^{\circ}C$ 이하에서 R.T으로 온도를 낮추면 본래의 ordered 구조로 되돌아간다. 하지만 bulk transition 온도를 지나면 order-disorder transition이 비가역적이고 segregation 현상이 일어난다.