• Journal of Electrochemical Science and Technology
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• v.15 no.1
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• pp.51-66
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• 2024

Modern society is making numerous efforts to reduce reliance on carbon-based energy systems. A notable solution in this transition is the adoption of lithium-ion batteries (LIBs) as potent energy sources, owing to their high energy and power densities. Driven by growing environmental challenges, the application scope of LIBs has expanded from their initial prevalence in portable electronic devices to include electric vehicles (EVs) and energy storage systems (ESSs). Accordingly, LIBs must exhibit long-lasting cyclability and high energy storage capacities to facilitate prolonged device usage, thereby offering a potential alternative to conventional sources like fossil fuels. Enhancing the durability of LIBs hinges on a comprehensive understanding of the reasons behind their performance decline. Therefore, comprehending the degradation mechanism, which includes detrimental chemical and mechanical phenomena in the components of LIBs, is an essential step in resolving cycle life issues. The LIB systems presently being commercialized and developed predominantly employ graphite anode and layered oxide cathode materials. A significant portion of the degradation process in LIB systems takes place during the electrochemical reactions involving these electrodes. In this review, we explore and organize the aging mechanisms of LIBs, especially those with graphite anodes and layered oxide cathodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.292-292
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• 2007

To apply PDP panel, Soda lime glass(SLG) is cheeper than Non-alkali glass and PD-200 glass but has problems such as low strain temperature and ion diffusion by alkali metal oxide. In this paper suggest the methode that prohibits ion diffusion by deposing barrier layer on SLG. Indium thin oxide(ITO) thin films and barrier layers were prepared on SLG substrate by Rf-magnetron sputtering. These films show a high electrical resistivity and rough uniformity as compared with PD-200 glass due to the alkali ion from the SLG on diffuse to the ITO film by the heat treatment. However these properties can be improved by introducing a barrier layer of $SiO_2\;or\;Al_2O_3$ between ITO film and SLG substrate. The characteristics of films were examined by the 4-point probe, SEM, UV-VIS spectrometer, and X-ray diffraction. GDS analysis confirmed that barrier layer inhibited Na and Ka ion diffusion from SLG. Especially ITO films deposited on the $Al_2O_3$ barrier layer had higher properties than those deposited on the $SiO_2$ barrier layer.

• KEPCO Journal on Electric Power and Energy
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• v.6 no.4
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• pp.461-466
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• 2020

There are many application fields of electrical energy storage such as load shifting, integration with renewables, frequency or voltage supports, and so on. Especially, the frequency regulation is needed to stabilize the electric power system, and there have to be more than 1 GW as power reserve in Korea. Ni-rich layered oxide cathode materials have been investigated as a cathode material for Li-ion batteries because of their higher discharge capacity and lower cost than lithium cobalt oxide. Nonetheless, most of them have been investigated using small coin cells, and therefore, there is a limit to understand the deterioration mode of Ni-rich layered oxides in commercial high energy Li-ion batteries. In this paper, the pouch-type 20 Ah-scale Li-ion full cells are fabricated using Ni-rich layered oxides as a cathode and graphite as an anode. Above all, two test conditions for the application of frequency regulation were established in order to examine the performances of cells. Then, the electrochemical performances of two types of Ni-rich layered oxides are compared, and the long-term performance and degradation mode of the cell using cathode material with high nickel contents among them were investigated in the frequency regulation conditions.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.420-423
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• 2003

Coatings of TiCrN ion-plated on a steel substrate was oxidized at $800^{\circ}C$ in air, and their oxidation mechanism was presented. During oxidation, substrate elements and Ti and Cr in the coating always diffused outwardly to form the oxide scale. Simultaneously, oxygen from the atmosphere diffused inward1y to react with Ti and Cr to form $TiO_2$and $Cr_2$$O_3$, respectively. Also, the counter-diffusion of cations and oxygen resulted in some oxygen dissolution in the unoxidized TiCrN coating, and Fe dissolution in the oxide scale. When the Ti content in the coating was high, the $TiO_2$-forming tendency was strong, while when the Cr content was high, the $Cr_2$$O_3$-forming tendency was strong.

• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.463-463
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• 2012

ITRS (international technology roadmap for semiconductors)에 따르면 MOS(metal-oxide-semiconductor)의 CD (critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/$SiO_2$를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두된다고 보고하고 있다. 일반적으로 high-k dielectric를 식각시 anisotropic 한 식각 형상을 형성시키기 위해서 plasma를 이용한 RIE (reactive ion etching)를 사용하고 있지만 PIDs (plasma induced damages)의 하나인 PIED (plasma induced edge damage)의 발생이 문제가 되고 있다. PIED의 원인으로 plasma의 direct interaction을 발생시켜 gate oxide의 edge에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 high-k dielectric의 식각공정에 HDP (high density plasma)의 ICP (inductively coupled plasma) source를 이용한 원자층 식각 장비를 사용하여 PIED를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. One-monolayer 식각을 위한 1 cycle의 원자층 식각은 총 4 steps으로 구성 되어 있다. 첫 번째 step은 Langmuir isotherm에 의하여 표면에 highly reactant atoms이나 molecules을 chemically adsorption을 시킨다. 두 번째 step은 purge 시킨다. 세 번째 step은 ion source를 이용하여 발생시킨 Ar low energetic beam으로 표면에 chemically adsorbed compounds를 desorption 시킨다. 네 번째 step은 purge 시킨다. 결과적으로 self limited 한 식각이 이루어짐을 볼 수 있었다. 실제 공정을 MOS의 high-k dielectric에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU (North Carolina State University) CVC model로 구한 EOT (equivalent oxide thickness)는 변화가 없으면서 mos parameter인 Ion/Ioff ratio의 증가를 볼 수 있었다. 그 원인으로 XPS (X-ray photoelectron spectroscopy)로 gate oxide의 atomic percentage의 분석 결과 식각 중 발생하는 gate oxide의 edge에 trap의 감소로 기인함을 확인할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.109-112
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• 2016

We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.

• 한국신재생에너지학회:학술대회논문집
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• 2008.10a
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• pp.51-54
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• 2008

This study aims to devise and analyze a power generation system combining the solid oxide fuel cell and oxy-fuel combustion technology. The fuel cell operates at an elevated pressure, a constituting a SOFC/gas turbine hybrid system. Oxygen is extracted from the high pressure cathode exit gas using ion transport membrane technology and supplied to the oxy-fuel power system. The entire system generates much more power than the fuel cell only system due to increased fuel cell voltage and power addition from oxy-fuel system. More than one third of the power comes out of the oxy-fuel system. The system efficiency is also higher than that of the fuel cell only system. Recovering most of the generated carbon dioxide is major advantage of the system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.302-306
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• 2019

We investigated a solution-derived $Y_2O_3$ film treated by ion beam (IB) irradiation as a liquid crystal (LC) alignment layer. With IB irradiation, homogeneous LC alignment was achieved irrespective of the annealing temperature. To verify the effect of IB irradiation, we conducted surface analyses such as X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). As $Y_2O_3$ is a high-k material, the electro-optical properties of the twisted nematic (TN) cells were superior to those of conventional TN cells based on a rubbed polymer, with an LC rising time of 4.1ms and falling time of 2.9ms. The IB-irradiated $Y_2O_3$ is a good alternative as an alignment layer for fast-switching TN LC displays.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.