• Title/Summary/Keyword: Ion oxide

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Evaluation of Antioxidative activity of Korean Yam (Dioscorea batatas DECNE.) by n-Butanol and Ethyl Acetate Extracts

  • Duan, Yishan;Kim, Han-Soo;Kim, Gyeong-Hwuii
    • Journal of the Korean Applied Science and Technology
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    • v.32 no.2
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    • pp.312-319
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    • 2015
  • In this study, n-butanol and ethyl acetate extracts were prepared from raw yam (Dioscorea batatas DECNE.). Their antioxidative potencies were investigated employing various in vitro methods, such as ferrous ion chelating, ${\beta}$-carotene bleaching assay, lipid peroxidation inhibition and nitric oxide (NO) radical scavenging and nitrite scavenging activity. The n-butanol fraction was assayed to possess stronger antioxidant activity by ${\beta}$-carotene bleaching assay, lipid peroxidation inhibition and NO radical scavenging activity. However, ethyl acetate extract was more effective in chelating ferrous ion and scavenging nitrite. Based on the results obtained, yam is a potential active ingredient that could be applied in antioxidation as well as bio-health functional food to take a good part in prevention of human diseases and aging.

High-Performance Silicon-on-Insulator Based Dual-Gate Ion-Sensitive Field Effect Transistor with Flexible Polyimide Substrate-based Extended Gate (유연한 폴리이미드 기판 위에 구현된 확장형 게이트를 갖는 Silicon-on-Insulator 기반 고성능 이중게이트 이온 감지 전계 효과 트랜지스터)

  • Lim, Cheol-Min;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.11
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    • pp.698-703
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    • 2015
  • In this study, we fabricated the dual gate (DG) ion-sensitive field-effect-transistor (ISFET) with flexible polyimide (PI) extended gate (EG). The DG ISFETs significantly enhanced the sensitivity of pH in electrolytes from 60 mV/pH to 1152.17 mV/pH and effectively improved the drift and hysteresis phenomenon. This is attributed to the capacitive coupling effect between top gate and bottom gate insulators of the channel in silicon-on-transistor (SOI) metal-oxide-semiconductor (MOS) FETs. Accordingly, it is expected that the PI-EG based DG-ISFETs is promising technology for high-performance flexible biosensor applications.

Effects of Alkali and Chloride ions on the Electric Conduction of ZrF4-Based Heavy Metal Fluoride Glasses (알칼리 및 염소 이온이 지르코늄 플루오르화물 유리의 전기전도에 미치는 영향)

  • 한택상;박순자;조운조;정기호;최상삼
    • Journal of the Korean Ceramic Society
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    • v.26 no.5
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    • pp.601-608
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    • 1989
  • Electrical properties of ZrF4-based heavy metla fluoride glasses were measured by the ac complex impedance method. The effects of alkali and chloride ions addition into fluoro zirconate glasses on the electrical conductivity were examined. The electrical conductivities of fluoride glasses show Arrhenian behavior in the temperature range of the experiment and were decreased by the addition of sodium fluoride up to 15mol%. Mixed alkali substitution resulted in conductivity minimum at intermediate composition which is commonly observed as mixed alkali effect' in alkali oxide glasses. Chloride ion substituted for fluoride ion was found to lower the conductivity.

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Contaminations of MgO Thin Films by Phosphors for the Surface and Vertical Discharge Type AC-PDP

  • Jen, Ko-Ruey;Kim, Sung-O;Chen, Kuang-Lang;Chen, Samuel;Lee, Chien-Pang;Huang, Chih-Ming;Hsu, Chien-Hsing
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.18-20
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    • 2006
  • The panels were fabricated to characterize the contamination of Magnesium Oxide (MgO) thin films by phosphors and ion bombardments in AC-PDPs. Forty-six inch WVGA panels of the surface and vertical discharge type were manufactured. The experiment was designed to investigate the relationship between the MgO thin films and phosphor contamination caused by ion bombardments in a plasma environment to produce a life time test. The contamination of MgO thin films by phosphors was investigated by way of X-ray photoelectron spectroscopy (XPS).

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Ion Sensitive Field Effect Transistor (감이온 전양효과 트랜지스트)

  • 손병기
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.18 no.5
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    • pp.22-29
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    • 1981
  • An ion sensitive field effect transistor employing a special HCI heat treatment for the gate oxide layer along with tungsten metallization and multilayer encapsulation using fumed silica epoxy mixture was fabricated and its performance characteristics have been investigated. A theoretical model for the device operation is discussed, and it is shown that the experimental results are in good agreement with the theory. The fabricated device has excellent performance characteristics showing the fast response, long operation-life, small pH hysteresis, high sensitivity, etc. Especially, its stability has been greatly improved.

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Synthesis of Zirconium Oxides on silicon by Radio-Frequency Magnetron Sputtering Deposition

  • Ma, Chunyu;Zhang, Qingyu
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.83-87
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    • 2003
  • Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

Fabrication of Hollow-type Silicon Microneedle Array Using Microfabrication Technology (반도체 미세공정 기술을 이용한 Hollow형 실리콘 미세바늘 어레이의 제작)

  • Kim, Seung-Kook;Chang, Jong-Hyeon;Kim, Byoung-Min;Yang, Sang-Sik;Hwang, In-Sik;Pak, Jung-Ho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2221-2225
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    • 2007
  • Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.

Optical Reactivity Modification of Titanium Oxide coatings on Ceramic filters by Nitrogen ion Implantation

  • Kim, Hyeong-Jin;Park, Jae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.90-90
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    • 2010
  • We investigated the modification of optical response properties of titanium dioxide (TiO2) coatings on the ceramic water-purification filters by using ultraviolet-visible absorption spectroscopy and X-ray diffraction. The TiO2 coatings were prepared on ceramic substrate by e-beam evaporation method. These amorphous TiO2 were turned into anatase phase by heat treatment at $700^{\circ}C$ for 2 hours. The doping of N atoms into the TiO2 coatings was done by using 70KeV of N+ ion implantation with the dose of $1.0{\times}1017$ ions/cm2, followed by post-irradiation heat treatment at $550^{\circ}C$ for 2 hours. Methylene blue test of TiO2 coatings to solar irradiation showed that the post-evaporation heated TiO2 was photocatalytic and N-doped TiO2 reacted to the visible part of solar irradiation.

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Polycrystalline Silicon Thin Film Transistor Fabrication Technology (다결정 실리콘 박막 트랜지스터 제조공정 기술)

  • 이현우;전하응;우상호;김종철;박현섭;오계환
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.212-222
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    • 1992
  • To use polycrystalline Si Thin Film Transistor (poly-Si TFT) in high density SRAM instead of High Load Resistor (HLR), TFT is needed to show good electrical characteristics such as large carrier mobility, low leakage current, high driver current and low subthreshold swing. To satisfy these electrical characteristics, the trap state density must be reduced in the channel poly. Technological issues pertinent to the channel poly fabrication process are investigated and discussed. They are solid phase growth (SPG), Si-ion implantation, laser annealing and hydrogenation. The electrical properties of several CVD oxides used as the gate oxide of TFT are compared. The dependence of the electrical characteristics of TFT on source-drain ion-implantation dose, drain offset length and dopant lateral diffusion are also described.

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Effect of Solution Compositions on Properties of Ni-Fe Nano Thin Film and Wire Made by Electrodeposition Method (Electrodeposition법으로 제조한 Ni-Fe 나노박막 및 나노선의 특성에 미치는 용액 조성의 영향)

  • Koo, Bon-Keup
    • Journal of Surface Science and Engineering
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    • v.43 no.5
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    • pp.243-247
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    • 2010
  • The micro Vickers hardness and internal stress of Ni-Fe metal thin film synthesized by electrodeposition method at $25^{\circ}C$ were studied as a function of bath composition, and surface microstructure and atomic compositions of thin films were investigated by SEM and EDS. And the shape change of $200\;{\AA}$ Ni-Fe nanowires made using anodic aluminum oxide(AAO) templates by electrodeposition method were observed by SEM as a function of ultrasonic treatment time and bath composition. The Fe deposition contents on the substrate non-linearly increased with Fe ion concentration over total metal ion concentration. In case of low Fe contents film, the grain size is smaller and denser than high Fe contents deposited films, and the micro Vickers hardness increased with Fe contents of electrodeposited films. These results affected the shape change of nanowire after ultrasonic treatments.