• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.111-116
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• 2000

700nm red emission(3F3longrightarrow3H6) in Tm3+ ion with 800 nm(3H6longrightarrow3H4) excitation via upconversion process has been reported only in host materials which have low phonon energies such as halide crystals. However, we observed 700nm and 480nm(1G4longrightarrow3H6) upconverted emission with 800nm excitation in several oxide glasses which has never reported. With spectroscopic analyses and lifetime measurements of each nergy level of Tm3+ ion doped in various oxide glasses, following mechanisms are suggested. For red upconversion, upconversion mechanism changed with Tm3+ concentration. While direct excitation up to 3F3 level via anti-Stokes excitation was dominated at low concentration, two-step excitation via 3H6longrightarrow3H4 and 3F4longrightarrow3F3 transitions was dominated at high concentration. For blue upconversion, two step excitation mechanism up to 1G4 level was suggested as follows : electrons are exciated up to 3H5 with direct excitation with pumping light up to 3H4 followed by multiphonon relaxation, and then additional reabsorption of pumping light excites electrons up to 1G4.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.120-126
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• 2004

A damage-reduced trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy, which was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $O_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching. To reduce the RIE induced damage and obtain the fine shape trench corner rounding, we investigated the hydrogen annealing effect after trench formation. Silicon atomic migration on trench surfaces using high temperature hydrogen annealing was observed with atomic scale view. Migrated atoms on crystal surfaces formed specific crystal planes such as (111), (113) low index planes, instead of fully rounded comers to reduce the overall surface energy. We could observe the buildup of migrated atoms against the oxide mask, which originated from the surface migration of silicon atoms. Using this hydrogen annealing, more uniform thermal oxide could be grown on trench surfaces, suitable for the improvement of oxide breakdown.

• Membrane Journal
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• v.28 no.3
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• pp.205-213
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• 2018

In this study, cross-linked membrane were successfully prepared by using brominated PPO (Br-PPO) as the main polymer chain. Chitosan and quaternary ammonium modified chitosan (QA-chitosan) was used as the cross linking agents. The cross linked membranes were post-functionalized by using trimethylamine solution. The degree of cross linking was also controlled by varying the ratio of cross linking agent. The applicability of the cross-linked membrane (A-PPO + chitosan, A-PPO + QA-chitosan) as ion exchange membranes was verified through various characterization techniques. The cross-linked membrane using QA-chitosan as cross linking agent was found to be better in performance than the membrane using pristine chitosan cross linking agent. As the percentage of QA-chitosan increased, the ion exchange capacity from 1.18 meq/g to 1.53 meq/g and water uptake from 21.6% to 42.2% was improved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.203-209
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• 2023

Cobalt sulfide nanocomposites were synthesized through a simple hydrothermal method as anode materials for sodium ion batteries (SIBs). In this work, a cobalt sulfide nanoparticle (CoS-NF) and a cobalt sulfide nanocomposite integrated with reduced graphene oxide (CoS@G-NC) were fabricated for electrochemical energy storage performance of battery. The as-prepared CoS@G-NC electrode exhibited reversible and stable cycle performance (62 % after 30 cycles at current density of 200 mA g^-1). The improved electrochemical property was attributed to the small grain growth and uniform distribution of cobalt sulfide during synthesis, which maximized the diffusion pathway for sodium ions and effectively suppressed the delamination and volume expansion of cobalt sulfide during the conversion reaction. The results provide promising anode materials for next-generation SIBs.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.505-510
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• 2012

Cobalt oxide nanostructure materials have been prepared by adding several concentrations of spectator Ni ions in solution, and analyzed by electron microscopy, X-day diffraction, calorimetry/thermogravimetric analysis, UV-vis absorption, Raman, and X-ray photoelectron spectroscopy. The electron microscopy results show that the morphology of the nanostructures is dramatically altered by changing the concentration of spectator ions. The bulk XRD patterns of $350^{\circ}C$-annealed samples indicate that the structure of the cobalt oxide is all of cubic Fd-3m $Co_3O_4$, and show that the major XRD peaks shift slightly with the concentration of Ni ions. In Raman spectroscopy, we can confirm the XRD data through a more obvious change in peak position, broadness, and intensity. For the un-sputtered samples in the XPS measurement process, the XPS peaks of Co 2p and O 1s for the samples prepared without Ni ions exhibit higher binding energies than those for the sample prepared with Ni ions. Upon $Ar^+$ ion sputtering, we found $Co_3O_4$ reduces to CoO, on the basis of XPS data. Our study could be further applied to controlling morphology and surface oxidation state.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.247-253
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• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.45-48
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• 2007

Thermochemical 2-step methane reforming, involving the reduction of metal oxide with methane to produce syn-gas and the oxidation of the reduced metal oxide with water to produce pure hydrogen, was investigated on ferrite-based metal oxide mediums and $WO_{3}/ZrO_{2}$. Thermochemical 2-step methane reforming were accomplished at 900 $^{\circ}C$(syn-gas production step) and 800 $^{\circ}C$(water-splitting step). In syn-gas production step, it appeared carbon deposition on metal oxides with increasing react ion time. Various mediums showed the different starting point of carbon deposition each other. To minimize the carbon deposition, the reaction time was controlled before the starting point of carbon deposition. As a result, $CO_{x}$ were not evolved in water-splitting step, Among the various metal oxides, $Mn-ferrite/ZrO_{2}$ showed high reactivity, proper $H_{2}/CO$ ratio, high selectivity of undesired $CO_{2}$ and high evolution of $H_{2}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.653-653
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• 2013

In this study, ITO extended gate reduced graphene oxide field effect transistor (rGO FET) was demonstrated as a transducer for a proton sensing application. In this structure, the sensing area is isolated from the active area of the device. Therefore, it is easy to deposit or modify the sensing area without affecting on the device performance. In this case, the ITO extended gate was used as a gate electrode as well as a proton sensing material. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device showed a high stability in the air ambient with a TTC encapsulation layer for months. The device showed an ambipolar characteristic with the Dirac point shift with varying the pH solutions. The sensing characteristics have offered the potential for the ion sensing application.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.696-696
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• 2013

Solid Oxide Fuel Cells (SOFCs) have been gaining academic/industrial attention due to the unique high efficiency and minimized pollution emission. SOFCs are an electrochemical system composed of dissimilar materials which operates at relatively high temperatures ranging from 800 to 1000oC. The cell performance is critically dependent on the inherent properties and integration processing of the constituents, a cathode, an electrolyte, an anode, and an interconnect in addition to the sealing materials. In particular, the gas transport, ion transport, and by-product removal also affect the cell performance, in terms of open cell voltages, and cell powers. In particular, the polarization of cathode materials is one of the main sources which affects the overall function in SOFCs. Up to now, there have been studies on the materials design and microstructure design of the component materials. The current work reports the effect of thin film processing on cathode polarization in solid oxide fuel cells. The polarization issues are discussed in terms of dc- and ac-based electrical characterizations. The potential of thin film processing to the applicability to SOFCs is discussed.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.308-312
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• 2007

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.