• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.260-264
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• 2014

We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.199-199
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• 2008

이 실험은 NVM의 Oxide, Nitride, Oxide nitride층별 blocking, trapping and tunneling 속성에 대해서 밝히고자 한다. gate 전극은 값싸고 전도도가 좋은 알루미늄을 사용한다. 유리기판위에 Silicon nitride층을 20nm로 코팅하고 Silicon dioxide층을 10nm로 코팅한다. 그리고 amorphous Silicon material이 증착된다. Poly Silicon은 Solid Phase Crystallization 방법을 사용하였다. 마지막 공정으로 p-doping은 ion shower에 의한 방법으로 drain과 source 전극을 생성하였다. gate가 biasing 될 때, p-channel은 source와 drain 사이에서 형성된다. Oxide Nitride Oxide nitride (ONO) 층은 각각 12.5nm/20nm/2.3nm의 두께로 만들었다. 전하는 Program process 중에 poly Silicon층에서 Silicon Oxide nitride tunneling층을 통하여 움직이게 된다. 그리고 전하들은 Silicon Nitride층에 머무르게 된다. 그 전하들은 erasing process 중에 trapping 층에서 poly Silicon 층으로 되돌아 간다. Silicon Oxide blocking층은 trapping층으로 전하가 나가는 것을 피하기 위하여 더해진다. 이 논문에서 Programming process와 erasing process의 Id-Vg 특성곡선을 설명한다. Programming process에 positive voltage를 또는 erasing process에 negative voltage를 적용할 때, Id-Vg 특성 곡선은 왼쪽 또는 오른쪽으로 이동한다. 이 실험이 보여준 결과값에 의해서 10년 이상의 저장능력이 있는 메모리를 만들 수 있다. 그러므로, NVM의 중요한 두 가지 성질은 유지성과 내구성이다.

• Ceramist
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• v.21 no.4
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• pp.349-365
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• 2018

Since the electrification of vehicles has been extended, solid-state batteries have been attracting a lot of interest because of their superior safety. Especially, polymer, sulfide, and oxide based materials are being studied as solid electrolytes, and each type of materials has advantaged and disadvantages over others. Oxide electrolytes has higher chemical and electrochemical stability compared to the other types of electrolytes. However, ionic conductivity isn't high enough as much as that of organic liquid electrolytes. Also, there are many difficulties of fabricating solid-state batteries with oxide based electrolytes because they require a sintering process at very high temperature (above ${\sim}800^{\circ}C$). Herein, we review recent studies of solid-state batteries with oxide based electrolytes about the ionic conductivity, interfacial reactions with Li metal, and preparation of solid-state cell.

• The Korean Journal of Food And Nutrition
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• v.34 no.3
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• pp.295-301
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• 2021

Steaming is a method that has traditionally been used for medicinal plant extraction. This study investigated nitrite oxide production, ferrous ion chelating activity, α-glucosidase, xanthine oxidase, and acetylcholinesterase inhibitory activities of ethanol, acetone and hot-water extracts of Codonopsis lanceolata prepared by steaming seven times. MTT assay showed that each extract was non-toxic up to a concentration of 700 ㎍/mL confirming that there was no cytotoxicity in all extracts. The α-glucosidase, xanthine oxidase, and acetylcholinesterase inhibitory activities exhibited by the hot-water extract obtained from steaming seven times were higher (83.1%) than the other extracts. Higher production of nitrite oxide and better ferrous chelating activity was recorded with hot-water extract compared to ethanol and acetone extracts. These results indicated that more steaming of Codonopsis lanceolata extracts would be required to validate the possibility of developing antioxidants. Also, further study is needed to determine if the components present in the tested extracts might be useful in the prevention of Alzheimer's disease. These results showed that hot-water extracts may be useful for their antioxidant and the production inhibitory activity of nitrite oxide. It will be helpful in the investigation of the constituent analysis of the steam-processed product of Codonopsis lanceolata.

• Resources Recycling
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• v.22 no.1
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• pp.42-47
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• 2013

Ferro-Nickel slag is a byproduct of Ferro-Nickel manufacturing process. Ferro-Nickel slag mostly discarded or used as aggregates despite having useful ingredients such as magnesium oxide and silicon oxide. This study tried to extract process for Mg ion using $H_2SO_4$ solution. And remove impurities and get high purity $Mg(OH)_2$ using NaOH. Mg ion was extracted with the Fe ion and other Ferro-Nickel slag composition by $H_2SO_4$ solution. It is important to control the pH because remove impurities and obtain high-purity $Mg(OH)_2$. The impurities were removed by precipitation of the hydroxides. After this process, we added NaOH and high-purity $Mg(OH)_2$ was obtained.

• Analytical Science and Technology
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• v.5 no.4
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• pp.401-408
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• 1992

The ion-selectrodes based on calcium ferrite were prepared by mixing calcium oxide with ferric oxide on molar ratio of 0.6:1.4, 0.8:1.2, 1.0:1.0, respectively. The specimens were sintered at $1400^{\circ}C$ for 2hrs in $O_2$ and for 20min in $H_2$ atmosphere. The selectrode sintered in hydrogen atmosphere showed better responded potential and wider range of responded concentration than selectrode sintered in oxygen atmosphere. The ion-selectrodes base on calcium ferrite(0.6:1.4 molar ratio.) showed the highest potential to bivalent cations such as $Ca^{2+}$, $Ba^{2+}$, $Mg^{2+}$, $Zn^{2+}$ and halogen anions such as $I^-$, $Br^-$ in the range of $10^{-1}{\sim}10^{-7}M$. It showed good agreement with theoretical nernstian values.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.216-216
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• 1999

The usage of a stationary plasma thruster (SPT) ion source, invented previously for space application in Russia, in experiments with surface modifications and film deposition systems is reported here. Plasma in the SPT is formed and accelerated in electric discharge taking place in the crossed axial electric and radial magnetic fields. Brief description of the construction of specific model of SPT used in the experiments is presented. With gas flow rate 39ml/min, ion current distributions at several distances from the source are obtained. These was equal to 1~3 mA/$\textrm{cm}^2$ within an ion beam ejection angle of $\pm$20$^{\circ}$with discharge voltage 160V for Ar as a working gas. Such an extremely high ion current density allows us to obtain the Ti metal films with deposition rate of $\AA$/sec by sputtering of Ti target. It is shown a possibility of using of reactive gases in SPT (O2 and N2) along with high purity inert gases used for cathode to prevent the latter contamination. It is shown the SPT can be operated at the discharge and accelerating boltages up to 600V. The results of presented experiments show high promises of the SPT in sputtering and surface modification systems for deposition of oxide thin films on Si or polymer substrates for semiconductor devices, optical coatings and metal corrosion barrier layers. Also, we have been tried to establish in application of the modeling expertise gained in electric and ionic propulsion to permit numerical simulation of additional processing systems. In this mechanism, it will be compared with conventional DC sputtering for film microstructure, chemical composition and crystallographic considerations.

• Particle and aerosol research
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• v.15 no.4
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• pp.127-137
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• 2019

Recently, high electrochemical performance anode materials for lithium ion secondary batteries are of interest. Here, we present silicon-carbon-graphene (Si-C-GR) composites for high performance anode materials of lithium ion secondary battery (LIB). Aerosol process and heat-treatment were employed to prepare the Si-C-GR composites using a colloidal mixture of silicon, glucose, and graphene oxide precursor. The effects of the size of the silicon particles in Si-C-GR composites on the material properties including the morphology and crystal structure were investigated. Silicon particles ranged from 50 nm to 1 ㎛ in average diameter were employed while concentration of silicon, graphene oxide and glucose was fixed in the aerosol precursor. Morphology of as-fabricated Si-C-GR composites was generally the shape of a crumpled paper ball and the Si particles were well wrapped in carbon and graphene. The size range of composites was about from 2.2 to 2.9 ㎛. The composites including silicon particles larger than 200 nm in size exhibited higher performance as LIB anodes such as capacity and coulombic efficiency than silicon particles less than 100 nm, which were about 1500 mAh/g at 100 cycles in capacity and 99% in coulombic efficiency, respectively.