• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.1-15
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• 1997

Titanium oxide films were prepared by ion beam enhanced deposition where the films were synthesized by deposition titianium atoms and simultaneously bombarding with xenon ion beam at an energy of 40 keV in an $O_2$ environ,ent. Structure and composition of titanium oxide films were investigated by X-ray Doffractopm (XRD) Ritjerfprd Backscattering Spectroscopy (RBS) and X-ray Diffraction(XRD) Rutherford Backscattering Spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) The results show that thestructure of the prepared films exhibit a rutile phase structure wit high(200) orientation and the O/Ti ratio of the titanium oxide films was about 2:1 XPS anlysis shows that $Ti^{2+},Ti^{3+}\;and\;Ti^{4+}$ chemical states exist on the titanium oxide films. the blood compatibility of the titanium oxide films was studied by measurements of blood clotting time and platelet adhesion. The results show that the anticoagulation property of titanium oxide films improved significantly and better than that of LTI-carbon which was widely used to fabricate artificial heart valve.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.8-19
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• 1995

Ion beam enhanced deopsition(IBED) was adopted to synthesize biocompatible titanium oxide film. Structure characteristics of titanium oxide film were investigated by RBS, AES and XRD. The blood compatibility of the titanium oxide film was studied by measurements of blood clotting time and platelet adhesion. The results show that the anticoagulation property of titanium oxide film is improved significantly. The mechanism of anticoagulation of the titanium oxide film was discussed.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.76-80
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• 2019

The characteristics of a titanium oxide layer prepared using a plasma electrolytic oxidation (PEO) process were investigated, using an extended gate ion sensitive field effect transistor (EG-ISFET) to confirm the layer's capability to react with hydrogen ions. The surface morphology and element distribution of the PEO-processed titanium oxide were observed and analyzed using field-emission scanning-electron microscopy (FE-SEM) and energy-distribution spectroscopy (EDS). The titanium oxide prepared by the PEO process was utilized as a hydrogen-ion sensing membrane and an extended gate insulator. A commercially available n-channel enhancement MOS-FET (metal-oxide-semiconductor FET) played a role as a transducer. The responses of the PEO-processed titanium oxide to different pH solutions were analyzed. The output drain current was linearly related to the pH solutions in the range of pH 4 to pH 12. It was confirmed that the titanium-oxide layer prepared by the PEO process could feasibly be used as a hydrogen-ion-sensing membrane for EGFET measurements.

• Journal of Surface Science and Engineering
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• v.49 no.2
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• pp.135-140
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• 2016

In this study, we prepared magnesium ion containing oxide films formed on the Ti-6Al-4V using plasma electrolytic oxidation (PEO) treatment. Ti-6Al-4V surface was treated using PEO in Mg containing electrolytes at 270V for 5 min. The phase, composition and morphology of the Mg ion containing oxide films were evaluated with X-ray diffraction (XRD), Attenuated total reflectance Fourier transform infrared (ATR-FTIR) and filed-emission scanning electron microscopy (FE-SEM) with energy dispersive X-ray spectrometer (EDS). The biocompatibility of Mg ion containing oxide films was evaluated by immersing in simulated body fluid (SBF). According to surface properties of PEO films, the optimum condition was formed when the applied was 270 V. The PEO films formed in the condition contained the properties of porosity, anatase phase, and near 1.7 Ca(Mg)/P ratio in the oxide film. Our experimental results demonstrate that Mg ion containing oxide promotes bone like apatite nucleation and growth from SBF. The phase and morphologies of bone like apatite were influenced by the Mg ion concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.518-523
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• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Transactions of the Society of Information Storage Systems
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• v.9 no.1
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• pp.22-27
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• 2013

In this paper we are presenting a architecture of Co ion decorated graphene oxide as an electrode for supercapacitor application. Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and coating on the surface of working electrode. The $Co^{2+}$ ions are coated by using layer by layer(LBL) method on graphene oxide foam. The metal ion decorated graphene oxide shows enhanced capacitance performance when tested as supercapacitor electrode, showing the specific capacitance of $827Fg^{-1}$.

• Bulletin of the Korean Chemical Society
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• v.22 no.5
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• pp.503-506
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• 2001

Separation of lithium isotopes was investigated by chemical ion exchange with a hydrous manganese(IV) oxide ion exchanger using an elution chromatography. The capacity of manganese(IV) oxide ion exchanger was 0.5 meq/g. One molar CH3COO Na solution was used as an eluent. The heavier isotope of lithium was enriched in the solution phase, while the lighter isotope was enriched in the ion exchanger phase. The separation factor was calculated according to the method of Glueckauf from the elution curve and isotopic assays. The single stage separation factor of lithium isotope pair fractionation was 1.021.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.290.1-290.1
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• 2016

Grapehen, a single atomic layer of graphite, has been in the spotlight and researched in vaious fields, because its fine mechanical, electrical properties, flexibility and transparence. Synthesis methods for large-area graphene such as chemical vaper deposition (CVD) and mechanical, chemical exfoliation have been reported. In particular, chemical exfoliation method receive attention due to low cost process. Chemical exfoliation method require reduction of graphene oxide in the process of exfoliation such as chemical reduction by strong reductant, thermal reduction on high temperature, and optical reduction via ultraviolet light exposure. Among these reduction methods, optical reduction is free from damage by strong reductant and high temperature. However, optical reduction is economically infeasible because the high cost of short-wavelength ultraviolet light sorce. In this paper, we make graphene-oxide and lanthanoid ion mixture aqueous solution which has highly optical absorbency in selective wevelength region. Sequentially, we synthesize reduced graphene oxide (RGO) using the solution and visible laser beam. Concretely, graphene oxide is made by modified hummer's method and mix with 1 ml each ultraviolet ray absorbent Gd3+ ion, Green laser absorbent Tb3+ ion, Red laser absorbent Eu3+ ion. After that, we revivify graphene oxide by laser exposure of 300 ~ 800 nm layser 1mW/cm2 +. We demonstrate reproducibility and repeatability of RGO through FT-IR, UV-VIS, Low temperature PL, SEM, XPS and electrical measurement.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• Nuclear Engineering and Technology
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• v.36 no.5
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• pp.415-419
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• 2004

The electrode potential characteristics of a YSZ based membrane metal oxide electrode have been studied in molten LiCL at $700^{\circ}C$ by the potentiometric method. The electrode exhibited a good potential response to log[$O^2$] and data reproducibility. The calibration plot (potential vs. log[$O^2$] was found to be linear, obeying the Nernst equation. The electrode potential showed a good reversibility corresponding to increase/decrease of the oxide ion present in the molten LiCl. The physical and chemical durability appeared to be sound after several repeated uses, resulting in reproducible results. However, "the proposed electrode" failed when metallic Li was present in the melt.