• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.240-240
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• 2011

The first neutral beam injector (NBI-1) has been developed for the Korea Superconducting Tokamak Advanced Research (KSTAR) tokamak. A first long pulse ion source (LPIS-1) has been installed on the NBI-1 for an auxiliary heating and current drive of KSTAR core plasmas. Performance of ion and neutral beam extractions in the LPIS-1 was investigated initially on the KSTAR NBI-1 system, prior to the neutral beam injection into the main plasmas. The ion source consists of a JAEA magnetic bucket plasma generator with multi-pole cusp fields and a set of KAERI prototype-III tetrode accelerators with circular apertures. The inner volume of plasma generator and accelerator column in the LPIS-1 is approximately 123 liters. Final design requirements for the ion source were a 120 kV/ 65 A deuterium beam and a 300 s pulse length. The extraction of ion beams was initiated by the formation of arc plasmas in the LPIS-1, called as an arc-beam extraction method. A stable ion beam extraction of LPIS-1 has been achieved up to an 100 kV/42 A for a 4 s pulse length and an 80 kV/25 A for a 14 s pulse length. Optimum beam perveance of 1.21 microperv has been found at an accelerating voltage of 80 kV. Neutralization efficiency has been measured by using a water flow calorimetry (WFC) method of calorimeter and an operation of bending magnet. The full-energy species of ion beams have been detected by using the diagnostic method of optical multichannel analyzer (OMA). An arc efficiency of the LPIS was 0.6~1.1 A/kW depending on the operating conditions of arc discharge.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.97-102
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• 1997

A medium energy ion scattering spectroscopy(ME1S) system has been developed and tested.In the MEIS system a toroidal electrostatic energy analyzer(TEA) and a two dimensional position sensitivedetector(PSD) were used. The energy resolution of MEIS system was estimated to be less than $4\times 10^{-3}$ and the overall angular resolution was less than 0.3". From the MEIS spectrum of $Ta_2O_5$(300 $\AA$)/ onSi analyzedousing 60 keV $H^+$, the energy loss factor(S.1 and depth resolution were estimated to he 42 eV/$\AA$ and 9.7 $\AA$, respectively. Also Si(100) surface was analyzed using the MEIS system. A random MElSspectrum was obtained from thc Si(100) covered with native oxide layers. At the double alignment condition, MElS spectrum showed ;i Si surface peak, a oxygen peak and a carbon peak.nd a carbon peak.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.179-187
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• 1998

A neutral particle energy analyzer, which has the carbon stripping foil and the $90^{\circ}$ cylindrical electrostatic deflection plate, was designed and constructed for measuring of ion temperature in plasma. The energy calibration and energy resolution were studied in detail for a hydrogen ion at the $0.5{\sim}3.0\;keV$ energy using a duoplasmatron ion source. An energy of hydrogen ion to the deflection plate voltage at the peak ion count rate could be fitted by the expression $E_{o}(keV)$=3.83V(kV). The measured energy resolution, which was about 2 % at the energy of 3.0 keV and 9 % at the energy of 0.5keV, was better for the increased hydrogen ion energy. For the charge exchanged hydrogen atom due to the carbon stripping foil, the energy calibration, energy loss and resolution were measured to the $0.5{\sim}2.0{\mu}g/cm^{2}$ thickness of the carbon stripping foil. An energy of the charge exchanged hydrogen atom as a function of the deflection plate voltage and carbon foil thickness could be fitted by the expression $E_{o}(keV)=(0.53d+4.4){\cdot}V(kV)$. The energy loss was $0.23{\sim}0.89\;keV $ to the $0.5{\sim}2.0{\mu}g/cm^{2}$ carbon foil thickness and the $0.5{\sim}3.0\;keV$ energy of the incident neutral hydrogen atom, it could be fitted by the expression ${\Delta}E=(0.12d+0.27){\cdot}{E_{o}}^{1/2}(keV)$. The measured energy resolution for the neutral hydrogen atom, which was between 7 % and 35 % in this experiment region, was increased for the increasing neutral hydrogen atom energy and the decreasing carbon stripping foil thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.133-133
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• 1998

In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K ａ(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.129-134
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• 2024

This study aims to talk about the necessity of solving the PFC gas emission problem raised by the recent development of the semiconductor industry and the remote plasma source method monitoring system used in the semiconductor industry. The 'monitoring system' means that the researchers applied machine learning to the existing monitoring technology and modeled it. In the process of this study, Residual Gas Analyzer monitoring technology and linear regression model were used. Through this model, the researchers identified emissions of at least 12700mg CO2 to 75800mg CO2 with values ranging from ion current 0.6A to 1.7A, and expect that the 'monitoring system' will contribute to the effective calculation of greenhouse gas emissions in the semiconductor industry in the future.

• Bulletin of the Korean Chemical Society
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• v.10 no.6
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• pp.524-529
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• 1989

A glow discharge mass spectrometric(GDMS) analytical method was developed for direct analysis of impurities in solids. Ions extracted from a glow discharge ion source with a sample as a cathode were analyzed by a quadrupole mass filter. Ion extractions were carried out through differentially-pumped orifices biased to positive and negative potentials. Operating parameters of the glow discharge source such as discharge current, orifice-to-cathode distance, energy analyzer setting and bias voltages have been optimized. The developed GDMS was applied to the analysis of KSS copper-base alloy standards certified by Korea Standards Research Institute(KSRI). In the analysis, the reproducibility and the detection limits were estimated to be about 2.5% RSD, and in the low ppm range, respectively.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.3
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• pp.246-251
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• 2017

To fabricate a hydrocarbon polymer electrolyte composite membrane incorporated with Pt nanoparticle, the polymer electrolyte membrane made of a sulfonated-fluorinated hydrophilic-hydrophobic block copolymer (SFBC) and sulfonated poly (ether ether ketone) (SPEEK) blend in the wight ratio of 1 : 1 was synthesized, and a simple drying process was used in order to incorporate Pt nanoparticle into the SFBC/SPEEK film by reducing platinum (II) bis (acetylacetonate), Pt $(acac)_2$. The distribution of the Pt nanoparticles was observed by transmission electron microscopy (TEM), and mechanical and thermal properties were tested by universal testing machine (UTM) and thermogravimetry analyzer (TGA). Cation conductivity, ion exchange capacity (IEC) and I-V characteristics were estimated.

• Macromolecular Research
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• v.11 no.1
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• pp.9-13
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• 2003

Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV)F$^{2+}$ and Cl$^{2+}$ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 10$^{11}$ to 3 $\times$ 10$^{14}$ ions/$\textrm{cm}^2$. From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H$_2$ molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF$_2$ molecules in the MeV ion-implanted PVDF samples.les.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.78-78
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• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.154-154
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• 1999

금속산화막은 전자부품 및 광학적 응용에 널리 사용되고 있다. 특히 알루미늄의 산화막은 유전체의 재료로 커패시터에 많이 사용되고 있다. 이러한 알루미늄 산화막을 plasma를 이용한 ion plating에 의해 형성하였다.Activated Reactive Evaporation은 화합물의 증착율을 높이는데 좋은 증착법이다. 이러한 증착법에는 reactive ion plating와 ion-assisted deposition 그리고 ion beam sputtering 등이 있다. 본 연구에서는 알루미늄 산화막을 증착시키기 위해 plasma를 이용한 electron-beam법을 사용하였다. Turbo molecular pump로 챔버 내의 진공을 약 10-7torr까지 낸린 후 5$\times$10-5torr까지 O2와 Ar을 주입시켰다. 각 기체의 분압은 RGA(residual gas analyzer)로 조사하여 일정하게 유지시켰다. plasma를 발생시키기 위해 filament에서 열전자를 방출시키고 1kV 정도의 electrode에 의해 가속시켜 이들 기체들과 반응시켜 plasma를 발생시켰다. 금속 알루미늄을 5kV정도의 고전압과 90mA의 전류로 electron beam에 의해 증발시켰다. 기판의 흡착율을 높ㅇ기 위해 기판에 500V로 bias 전압을 걸어 주었다. 증발된 금속 알루미늄 증기들이 plasmaso의 산소 이온들과 활성 반응을 이루어 알루미늄 기판 위에 Al2O3막을 형성하였다. 알루미늄 산화막을 분석하기 위해 XPS(X-ray Photoelectron Spectroscopy)로 화학적 조성을 조사하였는데, 알루미늄의 2p전자의 binding energy가 76.5eV로 측정되었다. 이는 대부분 증착된 알루미늄이 산소 이온과 반응하여 Al2O3로 형성된 것이다. SEM(Scanning electron Microscopy)과 AFM(Atomim Force microscopy)으로 증착박 표면의 topology와 roughness를 관찰하였다. grain의 크기는 10nm에서 150nm이었고 증착막의 roughness는 4.2nm이었다. 그리고 이 산화막에 전극을 형성하여 유전 상수와 손실률 등을 측정하였다. 이와 같이 plasma를 이용한 3-beam에 의한 증착은 금속의 산화막을 얻는데 유용한 기술로 광학 재료 및 유전 재료의 개발 및 연구에 많이 사용될 것으로 기대된다.