• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.497-497
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• 2012

산업의 발전함에 따라 고기능성 박막의 수요가 증가하고 있으며, magnetron sputtering, e-beam evaporation, ion beam 등을 이용한 박막 증착에 대한 연구가 많이 진행되고 있다. 그러나 기존 방법만으로는 박막 접착계면의 불균일로 인해 고기능성 박막 성장이 어렵다는 단점을 가지고 있다. 이러한 문제를 해결하기 위하여 박막 공정 중 고밀도 플라즈마 소스(high density plasma source)를 통해 추가적인 에너지를 인가하여 박막의 밀도를 bulk 수준으로 증가시키고 내부 응력을 조절하는 연구에 대한 관심이 커지고 있다. 특히 grid를 이용하여 플라즈마 내 이온의 입사에너지를 증가시킴으로써, 기존 공정보다 고기능성 박막을 구현할 수 있다. 본 연구에서는 RF power를 이용한 inductively coupled plasma를 통해 플라즈마를 생성시킨 후 grid에 DC power를 인가하는 플라즈마 소스를 개발하였으며, 시뮬레이션을 통해 plasma density와 ion current density, ion energy 분석 및 grid 디자인을 하였다. 개발된 플라즈마 소스는 ion energy analyzer를 통해 RF power 및 grid에 인가하는 power의 세기에 따라 이온화 정도 및 이온의 입사에너지를 측정하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.106-114
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• 1995

Direct implantation of metallic ion species has been employed in surface processing of industrial components and tools with very encouraging improvements in recent years. In spite of high technicla effectiveness, this new surface processing technique has not been extensively accepted by industries mainly because of high cost(capital and operating) compared with other competitive surface processing techniques. High current and large implantation area with eliminating the mass analyzer and the beam-scanning unit make metal vapor vacuum are(MEVVA)source ion implantation versatile, simple and cheap to operate and well suited to commercial surface processing. In this paper, the recent development of MEVVA source ion implantation technique ar Beijing Normal University has been reviewed and the results of production trials of several industrial components and tools implanted by MEVVA source ion implantation have been presented and discussed.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.72-77
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• 2021

The radial distribution of etch rate was analyzed using the ion energy flux model in VHF-CCP. In order to exclude the effects of polymer passivation and F radical depletion on the etching. The experiment was performed in Ar/SF6 plasma with an SF6 molar ratio of 80% of operating pressure 10 and 20 mTorr. The radial distribution of Ar/SF6 plasma was diagnosed with RF compensated Langmuir Probe(cLP) and Retarding Field Energy Analyzer(RFEA). The radial distribution of ion energy flux was calculated with Bohm current times the sheath voltage which is determined by the potential difference between the plasma space potential (measured by cLP) and the surface floating potential (by RFEA). To analyze the etch rate uniformity, Si coupon samples were etched under the same condition. The ion energy flux and the etch rate show a close correlation of more than 0.94 of R² value. It means that the etch rate distribution is explained by the ion energy flux.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1855-1856
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• 2008

본 연구에서는 공정 중에 민감하게 반응하는 플라즈마로부터 수집되는 이온에너지 분포(IED : Ion Energy Distribution)와 시계열 신경망 모델링을 결합한 플라즈마 감시 기술을 개발하였다. NIEA(Non-invasive ion analyzer)를 이용하여 IED를 측정하였으며, 모델링에 사용된 신경망은 자기 상관 시계열 신경망(A-NTS : Auto-Correlated Neural Time-Series)이다. 모델 개발을 위한 학습과 테스트 데이터로는 Duty ratio 100%에서 수집한 IED를 이용하였으며, 개발된 모델의 감시 성능은 60%에서 수집된 IED로 평가하였다. 학습인자 k와 m의 범위는 각각 1-3 으로 총 9종류의 (k, m) 조합에 대해서 모델 성능을 평가하였다. 신경망 은닉층 뉴런수는 2-9의 범위에서 최적화하였다. 최적화된 모델은 (2, 3)과 뉴런수 2에서 구해졌으며, 0.335의 예측 에러를 보였다. 60% IED 데이터로 평가한 결과 플라즈마 고장에의 민감도는 62% 이상이었다. 이는 IED의 A-NTS 모델이 플라즈마 고장의 감시에 효과적으로 적용될 수 있음을 의미한다.

• Journal of Radiation Industry
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• v.7 no.2_3
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• pp.149-154
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• 2013

In this study, the simple preparation of poly(sodium 4-styrenesulfonate) (PSS)-patterned substrate via a selective ion irradiation was investigated to manipulate cell adhesion. PSS thin films spin-coated onto the hydrophobic polystyrene (PS) was patterned through masked 150 keV proton irradiation followed by developing with deionized water. The characteristics of the resulting PSS-patterned surfaces were investigated by using microscope, surface profiler, FT-IR, XPS, and contact angle analyzer. These analytical results revealed that the resolved $100{\mu}m$ PSS patterns were formed on the hydrophobic PS surface above the fluence of $1{\times}10^{15}ions\;cm^{-2}$ and the chemical structure, composition, and wettability of the PSS patterns were dependant on a fluence. Moreover, the results of the in-vitro cell culture and proliferation assay exhibited that H1299 cells preferentially adhered and proliferated onto the more hydrophilic PSS part of the PSS-patterned PS and the well-aligned cell patterns was formed on the PSS-patterned PS particularly at the fluence of $1{\times}10^{15}ions\;cm^{-2}$.

• Journal of Radiation Industry
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• v.6 no.1
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• pp.23-29
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• 2012

In this study, we investigated the genetic variation in the general of monocot model plant (rice) in response to various ionizing irradiations including gamma-ray, ion beam and cosmic-ray. The non-irradiated and three irradiated (200 Gy of gamma-ray and 40 Gy of ion beam and cosmic-ray) plants were analyzed by AFLP technique using capillary electrophoresis with ABI3130xl genetic analyzer. The 29 primer combinations tested produced polymorphism results showing a total of 2,238 bands with fragments sizes ranged from 30 bp to 600 bp. The number of polymorphism generated by each primer combinations was varied significantly, ranging from 2 (M-CAC/E-ACG) to 158 (M-CAT/E-AGG) with an average of 77 bands. Polymorphic peaks were detected as 1,269 with an average of 44 per primer combinations. By UPGMA (Unweighted Pair Group Method using Arithmetic clustering) analysis method, the clusters were divided into non-irradiated sample and three irradiated samples at a similarity coefficient of 0.41 and three irradiation samples was subdivided into cosmic-ray and two irradiation samples (200 Gy of gamma-ray and 40 Gy of ion beam) at similarity coefficient of 0.48. Similarity coefficient values ranged from 0.41 to 0.55.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1589-1592
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• 1994

We developed the ion plating system, consisted of the Facing Target Magnetron Sputtering System and the r.f, electrode of the coil type, which was available to control the reactive and the adhesion between thin film and substrate, and studied about the discharge characteristics and the optimum condition in order to form the high quality thin film. The characteristics of discharge and plasma was measured as Double Probe and Electrostatic Retarding Grid Analyzer. The incident ion energy on the substrate was increased as the increasing r.f power, bias voltage. By the r.f electrode, the ionization rate of the sputtered particles was about 75%, and the mean incident ion energy depend on the value which was difference between the plasma potential and biased substrate potential.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.206-207
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• 2009

PECVD를 이용하여 상온에서 Silicon nitride 박막을 제조하였다. 그리고 증착 중에 non-invasive ion energy analyzer를 이용하여 이온에너지와 이온에너지 flux룰 측정하였다. PECVD의 소스 파워는 500W, 바이어스 파워 100W으로 고정하고 주파수 250Hz으로 고정된 상태에서 펄스를 인가하여 duty ratio를 30-100%까지 변화시켰다. 작은 duty ratio 범위 (30-70%)에서 duty ratio가 감소할 때, 이온에너지와 이온에너지의 비가 감소하였다. 이 때 감소되는 굴절률은 저이온에너지 변수와 강한 연관성을 지니고 있었다. 굴절률은 1.65-2.46 사이에서 변화하였다.