• Journal of Radiation Protection and Research
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• v.42 no.1
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• pp.63-68
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• 2017

Background: The combined effect of the low energy electron (LEE) irradiation and $Cu^{2+}$ ion on DNA damage was investigated. Materials and Methods: Lyophilized pBR322 plasmid DNA films with various concentrations (1-15 mM) of $Cu^{2+}$ ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Results and Discussion: Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. Conclusion: The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.32-44
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• 1997

A three-dimensional (3D) full-dynamic damage model for ion implantation in crystalline silicon was proposed to calculate more accurately point defect distributions and ion-implanted concentration profiles during ion implantation process. The developed model was based on the physical monte carlo approach. This model was applied to simulate B and BF2 implantation. We compared our results for damage distributions with those of the analytical kinchin-pease approach. In our result, the point defect distributions obtained by our new model are less than those of kinchin-pease approach, and the vacancy distributions differ from the interstitial distributions. The vacancy concentrations are higher than the interstitial ones before 0.8 . Rp to the silicon surface, and after the 0.8 . Rp to the silicon bulk, the interstitial concentrations are revesrsely higher than the vacancy ones.The fully-dynamic damage model for the accumulative damage during ion implantation follows all of the trajectories of both ions and recoiled silicons and, concurrently, the cumulative damage effect on the ions and the recoiled silicons are considered dynamically by introducing the distributon probability of the point defect. In addition, the self-annealing effect of the vacancy-interstitial recombination during ion implantation at room temperature is considered, which resulted in the saturation level for the damage distribution.

• Journal of the Korea Institute of Building Construction
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• v.3 no.3
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• pp.73-81
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• 2003

In this paper, salt damage resistance of high durable concrete was tested. High durable concrete was made by using low water cement ratio, chemical admixture called super-durable admixture and mineral admixtures such as fly-ash, ground granulated blast-furnace slag, silica fume. Two kinds of salt damage resistance test were carried out. One method is chloride ion penetration test(ASTM C1202), and the other one is depth of chloride penetration test in saline solution. Test results were as followers: 1) The depth of chloride ion penetration increased exponentially as water cement ratio was increased and time passed. 2) Super-durable admixture had little effect on the improvement of salt damage resistance of concrete. 3) Silica fume and ground granulated blast-furnace slag were effective on salt damage resistance because of pozzolanic reaction, but fly-ash had a little effect.

• 전자공학회논문지 IE
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• v.47 no.2
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• pp.8-12
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• 2010

TEM is a powerful tool for semiconductor material analyses in structure or biological sample in micro structure. TEM observation need to make to coincide specimens for special purpose. in this paper, we have experimented for minimum surface damage on bulk wafer and patterned specimen by various conditions such as accelerating energy, depth of ion beam, ion milling types, and etc. in various specimen preparation methods by FIB (Focus Ion Beam). The optimal qualified specimens are contain low mounts of surface damage(about 5 nm) on patterned specimen.

• Archives of Craniofacial Surgery
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• v.20 no.4
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• pp.223-227
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• 2019

Background: Neurosensory changes are frequently observed in the patients with mid-face fractures, and these symptoms are often caused by infraorbital nerve (ION) damage. Although ION damage is a relatively common phenomenon, there are no established and objective methods to evaluate it. The aim of this study was to test whether trigeminal somatosensory evoked potential (TSEP) could be used as a prognostic predictor of ION damage and TSEP testing was an objective method to evaluate ION injury. Methods: In this prospective TSEP study, 48 patients with unilateral mid-face fracture (only unilateral blow out fracture and unilateral zygomaticomaxillary fracture were included) and potential ION damages were enrolled. Both sides of the face were examined with TSEP and the non-traumatized side of the face was used as control. We calculated the latency difference between the affected and the unaffected sides. Results: Twenty-four patients recovered within 3 months, and 21 patients took more than 3 months to recover. The average latency difference between the affected side and unaffected side was 1.4 and 4.1 ms for the group that recovered within 3 months and the group that recovered after 3 months, respectively. Conclusion: Patients who suffered ION damage showed prolonged latency when examined using the TSEP test. TSEP is an effective tool for evaluation of nerve injury and predicting the recovery of patients with ION damage.

• Journal of Radiation Protection and Research
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• v.40 no.2
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• pp.87-91
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• 2015

We have employed X-ray photoelectron spectroscopy (XPS) technique to examine the combined effects of low-energy electron (LEE) irradiation and $Fe^{3+}$ ion on DNA damage. pBR322 plasmid DNA extracted from E. coli ER2420 was used for preparing DNA-$Fe^{3+}$ sample. The C1s XPS spectra were scanned for LEE-irradiated and LEE-unirradiated samples and then curve-fitted. For the samples with LEE irradiation only or with Fe ion only, no significant changes from pure DNA samples were observed - a single effect of either $Fe^{3+}$ ion or LEE irradiation did not cause a significant damage. However, when these two components were combined, the DNA damage was increased quite significantly, compared to the sum of DNA damages caused by $Fe^{3+}$ ion and by LEE irradiation independently. This observation is consistent with our previous results [Radiat. Res. 177, 775 (2012)] which was done using gel-electrophoresis technique. Partial interpretation of the observed spectrum peaks was also attempted.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.418-424
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• 2000

Effects of Ar ion damage prior to the phase transformation from pyrochlore to perovskite structure of PZT thin films have been investigated. As the degree of damage increased by increasing the acceleration voltage in the ion mass doping system, the phase transformation temperature decreased such that the temperature could be lowered down to 550$^{\circ}C$ when the film was damaged at 15 kV for 5 minutes. When the film was damaged prior to the heat treatment grain size of the perovskite thin films became less than 300${\AA}$. It turned out that relatively high value of the remanent polarization (about 30${\mu}$C/$\textrm{cm}^2$) as well as improvement of the fatigue characteristics to a large extent is closely related to the fine grain size of thus obtained PZT films.

• Journal of the Korean institute of surface engineering
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• v.50 no.2
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• pp.91-97
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• 2017

The aim of this paper is to investigate the characteristics of electrochemical corrosion with the plasma ion nitriding temperature for 16Cr-10Ni-2Mo stainless steel. The corrosion behavior was analyzed by means of galvanostatic experiment in natural seawater that applied various current density with plasma ion nitriding temperature parameters. In result of galvanostatic experiment, relatively less surface damage morphology and the less damage depth was observed at a nitrided temperature of $450^{\circ}C$ that measured the thickest nitrided layer(S-phase). On the other hand, the most damage depth and unified corrosion behavior presented at a temperature of $500^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.9-16
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• 1999

We have investigated effects of local damage accumulation for ultra-low energy As and B ion implant using highly efficient molecular dynamics(MD) scheme. We simulated ion implantation by MD simulation using recoil ion approximation (RIA) method and local cell damage accumulation (LCDA) model proposed in the paper. Local damage accumulation probability function consisted of deposited energy in a unit cell, implant dose rate, target material, projectile atom, and recoil event number. The simulated results were good agreement with the experimental and other simulated results. The MDRANGE results without damage accumulation were different from SIMS data in the tail region. We also simulated 2 dimensional dopant and damage profiles using the local damage accumulation model and recoil ion approximation method.

• Journal of the Mineralogical Society of Korea
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• v.28 no.4
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• pp.293-297
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• 2015

Focused ion beam (FIB) technique is widely used in the precise preparation of thin slices for the transmission electron microscopic (TEM) observation of target area of the minerals and geological materials. However, structural damages and artifacts by the Ga ion beam as well as electron beam damage are major difficulties in the TEM analyses. TEM analyses of the mineral samples showed the amorphization of quartz and feldspar, curtain effect, and Ga contamination, particularly near the grain edges and relatively thin regions. Although the ion beam damage could be much reduced by the improved procedures including the adjustment of the acceleration voltage and current, the ion beam damage and contamination are likely inevitable, thus requiring careful interpretation of the micro-structural and micro-chemical features observed by TEM analyses.