• Title/Summary/Keyword: Ion beam treatment

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IGZO 박막 표면의 수소 이온 빔 처리 효과

  • Lee, Seung-Su;Min, Gwan-Sik;Yun, Ju-Yeong;O, Eun-Sun;Jeong, Jin-Uk;Kim, Jin-Tae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.154.1-154.1
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    • 2014
  • Indium gallium zinc oxide (IGZO)는 차세대 디스플레이 평판 패널에 사용되는 반도체 화합물의 일종으로 최근 주목받고 있는 물질의 하나이다. 기존의 IGZO를 사용하여 박막을 증착한 뒤 표면 처리를 통해 박막의 특성 변화에 대한 연구들이 진행되어 왔으며, 기존의 연구들은 plasma 환경에 노출을 시켜 간접적인 plasma treatment를 통해 박막의 특성을 향상시켜 왔다. 본 연구에서는 기존의 plasma treatment에서 발견된 방식인 ion beam treatment를 통해 플라즈마를 직접적으로 표면에 조사하여 박막의 특성 변화를 알아보았다. 한국표준과학연구원에서 자체 제작한 chamber를 이용하여 RF sputter로 Si wafer 위에 IGZO 박막을 증착하고 수소 ion beam treatment를 한 뒤, SEM과 XPS를 사용하여 박막 표면의 물성 변화를 분석하였다. 실험에 사용된 chamber에는 sputter gun과 ion beam이 함께 장착되어 있으며, scroll pump와 TMP를 사용하여 pressure를 유지하였다. 실험 시 base pressure는 $1.4{\times}10^{-6}Torr$였다. RF power 150 W. ion beam power 2,000 V에서 실험을 진행하였다.

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Evolution the surface morphology and mechanical properties of Polyimide induced by Ion Beam Irradiation

  • Ahmed, Sk. Faruque;Nho, Gun-Ho;Moon, Myoung-Woon;Han, Jun-Hyun;Lee, Kwang-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.98-98
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    • 2010
  • Ion beam irradiation has been extensively used for surface modification of polymers, glassy metals and amorphous and crystalline materials at micron and submicron scales. The surface structures created by exposure to an ion beam range from dots, steps and one-dimensional straight wrinkles to highly complex hierarchical undulations and ripples. In general, the morphology of these nanoscale features can be selected by controlling the ion beam parameters (e.g. fluence and acceleration voltage), making ion beam irradiation a promising method for the surface engineering of materials. In the work, we presented that ion beam irradiation results in creation of a peculiar nanoscale dimple-like structure on the surface of polyimide - a common polymer in electronics, large scale structures, automobile industry, and biomedical applications. The role of broad Ar ion beam on the morphology of the structural features was investigated and insights into the mechanisms of formation of these nanoscale features were provided. Moreover, a systematic experimental study was performed to quantify the role of ion beam treatment time, and thus the morphology, on the coefficient of friction of polyimide surfaces covered by nanostructure using a tribo-experiment. Nano-indentation experiment were performed on the ion beam treated surfaces which shows that the hardness as well as the elastic modulus of the polyimide surface increased with increase of Ar ion beam treatment time. The increased of hardness of polyimide have been explained in terms of surface structure as well as morphology changes induced by Ar ion beam treatment.

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Carbon Ion Therapy: A Review of an Advanced Technology

  • Kim, Jung-in;Park, Jong Min;Wu, Hong-Gyun
    • Progress in Medical Physics
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    • v.31 no.3
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    • pp.71-80
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    • 2020
  • This paper provides a brief review of the advanced technologies for carbon ion radiotherapy (CIRT), with a focus on current developments. Compared to photon beam therapy, treatment using heavy ions, especially a carbon beam, has potential advantages due to its physical and biological properties. Carbon ion beams with high linear energy transfer demonstrate high relative biological effectiveness in cell killing, particularly at the Bragg peak. With these unique properties, CIRT allows for accurate targeting and dose escalation for tumors with better sparing of adjacent normal tissues. Recently, the available CIRT technologies included fast pencil beam scanning, superconducting rotating gantry, respiratory motion management, and accurate beam modeling for the treatment planning system. These techniques provide precise treatment, operational efficiency, and patient comfort. Currently, there are 12 CIRT facilities worldwide; with technological improvements, they continue to grow in number. Ongoing technological developments include the use of multiple ion beams, effective beam delivery, accurate biological modeling, and downsizing the facility.

A Study on the Fabrication of STS 316L Films by Ion Beam Deposition with Ion Source (이온빔 보조 증착법을 이용한 STS 316L 박막 합성에 관한 연구)

  • Lee, J.H.;Song, Y.S.;Lee, K.H.;Lee, K.H.;Lee, D.Y.;Yoon, J.K.
    • Korean Journal of Materials Research
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    • v.13 no.9
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    • pp.587-592
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    • 2003
  • The thin films of 316L stainless steel were made on glass and S45C substrate by Ion beam assisted deposition with reactive atmosphere of argon and nitrogen. The films were deposited at the various conditions of ion beam power and the ratios of Ar/$N_2$gas. Properties of these films were analyzed by glancing x-ray diffraction method(GXRD), AES, potentiodynamic test, and salt spray test. The results of GXRD showed that austenite phase could be appeared by $N_2$ion beam treatment and the amount of austenite phase increased with the amount of nitrogen gas. The films without plasma ion source treatment had the weak diffraction peak of ferrite phase. But under the Ar plasma ion beam treatment, the strong diffraction peaks of ferrite phase were appeared and the grain size was increased from 12 to 16 nm. Potentiodynamic polarization test and salt spray test indicated that the corrosion properties of the STS 316L films with nitrogen ion source treatment were better than bulk STS 316L steel and STS 316L films with Ar ion source treatment.

Measurement of ion-induced secondary electron emission coefficient for MgO thin film with $O_{2}$ plasma treatment

  • Jeong, H.S.;Oh, J.S.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.802-805
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    • 2003
  • The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

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Ion-induced secondary electron emission coefficient and work function for MgO thin film with $O_2$ plasma treatment

  • Jung, J.C.;Jeong, H.S.;Lee, J.H.;Oh, J.S.;Park, W.B.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.525-528
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    • 2004
  • The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

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Effect of Incident Ion Beam Energy on Microstructure and Adhesion Behavior of TiN Thin Films (TiN 박막의 미세조직 및 밀착력에 미치는 입사이온빔 에너지의 효과)

  • Baeg, C.H.;Hong, J.W.;Wey, M.Y.
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.4
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    • pp.229-234
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    • 2005
  • Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.

Improvement of Electrical Property and Stability of Silver Nanowire Transparent Electrode Via Ion-beam Treatment (이온빔 처리를 통한 은나노와이어 전극의 전기적 특성과 안정성 향상)

  • Jung, Sunghoon;Lee, Seunghun;Kim, Do-Geun
    • Journal of the Korean institute of surface engineering
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    • v.50 no.6
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    • pp.455-459
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    • 2017
  • The development of flexible transparent electrode has been paid attention for flexible electronics. In this study, we have developed transparent electrode based on silver nanowires with improved electrical property and stability through ion-beam treatment. The energetic particles of ion-beam could sinter junctions of each silver nanowires and etch out polyvinylpyrollidone(PVP) coated on silver nanowires. The sheet resistance of silver nanowire transparent electrode was reduced by 74%, and the resistance uniformity was increased about 3 times after exposure of ion beam. Moreover, the stability at $85^{\circ}C$ of temperature and 85% of relative humidity could be also improved.

Linear Ion Beam Applications for Roll-to-Roll Metal Thin Film Coatings on PET Substrates

  • Lee, Seunghun;Kim, Do-Geun
    • Applied Science and Convergence Technology
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    • v.24 no.5
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    • pp.162-166
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    • 2015
  • Linear ion beams have been introduced for the ion beam treatments of flexible substrates in roll-to-roll web coating systems. Anode layer linear ion sources (300 mm width) were used to make the linear ion beams. Oxygen ion beams having an ion energy from 200 eV to 800 eV used for the adhesion improvement of Cu thin films on PET substrates. The Cu thin films deposited by a conventional magnetron sputtering on the oxygen ion beam treated PET substrates showed Class 5 adhesion defined by ASTM D3359-97 (tape test). Argon ion beams with 1~3 keV used for the ion beam sputtering deposition process, which aims to control the initial layer before the magnetron sputtering deposition. When the discharge power of the linear ion source is 1.2 kW, static deposition rate of Cu and Ni were 7.4 and $3.5{\AA}/sec$, respectively.

Performance enhancement of Organic Thin Film Transistor by Ar Ion Beam treatment (Ar Ion Beam 처리를 통한 Organic Thin Film Transistor의 성능향상)

  • Jung, Suk-Mo;Park, Jae-Young;Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.11
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    • pp.15-19
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    • 2007
  • This paper reports the effects of Ar ion beam surface treatment on a $SiO_2$ dielectric layer in organic thin film transistors. We compared the electrical properties of pentacene-based OTFTs, treated by $O_2$ plasma or Ar ion beam treatments and characterized the states of the surface of the dielectric by using atomic force microscopy and X-ray photoelectron spectroscopy. For the sample which received $O_2$ plasma treatment, the mobility increased significantly but the on/off current ratio was found very low. The Ar ion beam-treated sample showed a very high on/off current ratio as well as a moderately improved mobility. XPS data taken from the dielectric surfaces after each of treatments exhibit that the ratio of between Si-O bonds and O-Si-O bonds was much higher in the $O_2$ plasma treated surface than in the Ar ion beam treated surface. We believe that our surface treatment using an inert gas, Ar, carried out an effective surface cleaning while keeping surface damage very low, and also the improved device performances was achieved as a consequence of improved surface condition.