• Current Optics and Photonics
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• v.2 no.2
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• pp.125-133
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• 2018

We report an in-depth analysis of the design and fabrication of multilayer dielectric (MLD) diffraction gratings for spectral beam combining at a wavelength of 1055 nm. The design involves a near-Littrow grating and a modal analysis for high diffraction efficiency. A range of wavelengths, grating periods, and angles of incidence were examined for the near-Littrow grating, for the $0^{th}$ and $-1^{st}$ diffraction orders only. A modal method was then used to investigate the effect of the duty cycle on the effective indices of the grating modes, and the depth of the grating was determined for only the $-1^{st}$-order diffraction. The design parameters of the grating and the matching layer thickness between grating and MLD reflector were refined for high diffraction efficiency, using the finite-difference time-domain (FDTD) method. A high reflector was deposited by electron-beam evaporation, and a grating structure was fabricated by photolithography and reactive-ion etching. The diffraction efficiency and laser-induced damage threshold of the fabricated MLD diffraction gratings were measured, and the diffraction efficiency was compared with the design's value.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.85-90
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• 1998

A 1 4 polymeric optical power divider based on the multimode interference effect is designed and fabricated. The two dimensional finite difference beam propagation method has been utilized in designing the device. Polymers used for the core layer and the cladding layer are Cyclotene-3022 and UV-15, respectively. The device is fabricated by the reactive ion etching method. The splitting ratio of the fabricated device is 0.93 : 1.00 : 0.93 : 0.90 for TE mode and 0.84 : 0.94 : 1.00 : 0.83 for TM mode. The advantages of this device are small size and low polarization-dependence.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.218-224
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• 2002

A domestic round robin test(RRT) for the quantitative analysis of minor impurities was performed by a standard procedure and standard reference material. The certified reference material(CRM)s for B-doped Si thin film and analysis specimens and the analysis specimens were prepared by an ion beam sputter deposition method. These samples were certified by inductively coupled plasma mass spectrometry(ICP-MS) with isotope dilution method which il one of the most quantitative methods in chemical analysis. By using an international standard procedure(ISO/DIS-l4237) for the quantitative analysis of B in Si by SIMS, a domestic RRT was performed for these specimens. Although only a few laboratories participated in this RRT, the average B concentration well agreed with the certified value within 2% error.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.62-65
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• 2005

We studied the nematic liquid crystal (NLC) alignment capability by the Ultraviolet (UV) alignment method on a-C:H thin-films, and investigated electro-optical performances of the UV aligned twisted nematic (TN)-liquid crystal display (LCD) with the UV exposure on a-C:H thin film surface. A good LC alignment by UV irradiation on a-C:H thin-film surfaces was achieved. Monodomain alignment of the UV aligned TN-LCD can be observed. The good electro-optical (EO) characteristics of the UV aligned TN-LCD was observed with oblique UV exposure on the a-C:H thin film surface for 1min.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Progress in Medical Physics
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• v.9 no.2
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• pp.105-113
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• 1998

Accurate radiation dosimetric characters is very important to determine of dose to a radiotherapeutic patient. Medical linear accelerators have been developed not only its new quality of convenient operation but also electric moderation. It is reliable to measure more detail physical parameter that linac's internal ability. Typically, radiation dosimetric tool is classified ionization chamber, film, thermoluminescence dosimeter, etc. Nowaday, Electronic Portal Imaging Device is smeared in radiation field to verification of treatment region. EPID's image was focused that using both on-line image verification and absolutely minimum absorbed dose during radiotherapy. So, Electronic Portal Imaging was tested for quality evaluation of medical linear accelerator had its pure conditional flash. This study has performed symmetry, Light/Radiation field congruence, and energy check, geometry difference on wedge filter using a liquid filled ion chamber (EPID). Prior to irradiated on EPID, high energy photon beam is checked with ion chamber. Using these results more convenient dosimetric method is accomplished by EPID that taken digital image. Medical image is acquired with EPID too. Therefore, EPID can be analyzed by numerical information for what want to see or get more knowledge for natural human condition.

• Journal of the Society of Naval Architects of Korea
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• v.28 no.2
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• pp.146-158
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• 1991

The flow around a two-dimensional foil section Is measured by a LDV(Laser Doppler Velocimetry) system which is capable of measuring the datailed flow field without interfering the original flow field. A 2-color 3-beam LDV system, which is capable of mea,;tiring 2 velocity components simultaneously and uses 2W Ar-Ion laser source, is used to measure the flow field around an NACA0012 foil section. The measured flow velocities are analysed iii order to study the boundary layer characteristics, flow separation and the detail structure of the flow near the trailing edge of the foil. The boundary layer characteristics are compared with the results by the head's momentum integral method. For the case of small angle of attack at relatively higher Reynolds number, both results show good agreements. The measured data of the velocity field around an NACA0012 foil section would be valuable data to validate the CFD(Computational Fluid Dynamic) calculation results. The developed experimental technique to evaluate the characteristics of two-dimensional foil sections is essential tool to develope new blade sections which have good lift characteristics and better cavitation performances.