• Title/Summary/Keyword: Ion beam method

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Vacuum Web-coater with High Speed Surface Modification Equipment for fabrication of 300 mm wide Flexible Copper Clad Laminate (FCCL) (초고속 대면적 표면 처리 장치가 부착된 300 mm 폭 연성 동박적층 필림 제작용 진공 웹 코터)

  • Choi, H.W.;Park, D.H.;Kim, J.H.;Choi, W.K.;Sohn, Y.J.;Song, B.S.;Cho, J.;Kim, Y.S.
    • Journal of the Korean Vacuum Society
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    • v.16 no.2
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    • pp.79-90
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    • 2007
  • Prototype of $800{\ell}$ vacuum web coater (Vic Mama) consisting of ion source with low energy less than 250 eV for high speed surface modification and 4 magnetron sputter cathodes was designed and constructed. Its performance was evaluated through fabricating the adhesiveless flexible copper clad laminate (FCCL). Pumping speed was monitored in both upper noncoating zone pumped down by 2 turbo pumps with 2000 l/sec pumping speed and lower surface modification and sputter zone vacuumed by turbo pumps with 450 1/sec and 1300 1/sec pumping speed respectively. Ion current density, plasma density, and uniformity of ion beam current were measured using Faraday cup and the distribution of magnetic field and erosion efficiency of sputter target were also investigated. With the irradiation of ion beams on polyimide (Kapton-E, $38{\mu}m$) at different fluences, the change of wetting angle of the deionized water to polyimide surface and those of surface chemical bonding were analyzed by wetting anglometer and x-ray photoelectron spectroscopy. After investigating the deposition rate of Ni-Cr tie layer and Cu layer was investigated with the variations of roll speed and input power to sputter cathode. FCCL fabricated by sputter and electrodeposition method and characterized in terms of the peel strength, thermal and chemical stability.

A study of detector size effect using Monte Carlo simulation

  • Park, Kwang-Yl;Yi, Byong-Yong;Vahc, Young W.
    • Proceedings of the Korean Society of Medical Physics Conference
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    • 2004.11a
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    • pp.36-38
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    • 2004
  • The detector size effect due to the spatial response of defectors is one critical source of inaccuracy in clinical dosimetry and has been a subject of numerous studies. Conventionally, the detector response kernel contains all of the influence that the detector size has on the measured beam profile. Various analytic models for this kernel have been proposed and studied in theoretical and experimental works. Here, we use a method to determine detector response kernel simply by using Monte Carlo simulation and convolution theory. Based on this numerical method and DOSIMETER, an EGS4 Monte Carlo code, the detector response for a Farmer type ion chamber embedded in water phantom is obtained. There exists characteristic difference in the simulated chamber readings between one with carbon graphite wall and the other with Acrylic wail. Using the obtained response and the convolution theory, we are planning to derive the detector response kernel numerically and remove detector size effect from measurements for 6MV, 10${\times}$l0cm2 and 0.5${\times}$10 cm2 photon beam.

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Numerical Study of a Novel Bi-focal Metallic Fresnel Zone Plate Having Shallow Depth-of-field Characteristics

  • Kim, Jinseob;Kim, Juhwan;Na, Jeongkyun;Jeong, Yoonchan
    • Current Optics and Photonics
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    • v.2 no.2
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    • pp.147-152
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    • 2018
  • We propose a novel bi-focal metallic Fresnel zone plate (MFZP) with shallow depth-of-field (DOF) characteristics. We design the specific annular slit patterns, exploiting the phase-selection-rule method along with the particle swarm optimization algorithm, which we have recently proposed. We numerically investigate the novel characteristics of the bi-focal MFZP in comparison with those of another bi-focal MFZP having equivalent functionality but designed by the conventional multi-zone method. We verify that whilst both bi-focal MFZPs can produce dual focal spots at $15{\mu}m$ and $25{\mu}m$ away from the MFZP plane, the former exhibits characteristics superior to those of the latter from the viewpoint of axial resolution, including the axial side lobe suppression and axial DOF shallowness. We expect the proposed bi-focal MFZP can readily be fabricated with electron-beam evaporation and focused-ion-beam processes and further be exploited for various applications, such as laser micro-machining, optical trapping, biochemical sensing, confocal sensing, etc.

Comparison of characteristics of MgO films deposited by vacuum arc method with other methods. (진공아크 증착법과 다른 공정에 의해 증착된 MgO 박막 특성 비교)

  • 이은성;김종국;이성훈;이건환
    • Journal of the Korean Vacuum Society
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    • v.12 no.2
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    • pp.112-117
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    • 2003
  • MgO films is widely used in plasma display panel (PDP) technology. In this work, structural and optical properties of the MgO films deposited by e-beam evaporation, reactive magnetron sputtering, which are commercially used, and arc deposition were compared. MgO thin films were deposited on glass substrates by vacuum arc deposition equipment using a magnesium metal target at various oxygen gas flows. In order to investigate the packing density by ellipsometer, to measure reasonable erosion-rates of the MgO protective layers, we introduced an acceleration test method, namely, Ar+ ion beam induced erosion test. Also, XPS and UV test were adopted to examine the effect of the moisture on the optical transmittance of the MgO protective layers, which showed that these of MgO films by arc deposition method sustained more 90% and were insensitive to effect of the moisture. XRD and AFM have been also used to study behaviors of the structure and surface morphology.

Sticking Characteristics in BiSrCaCuO Thin Film Fabricated by Layer-by-Layer Sputtering Method (순차 스퍼터법으로 제작한 BiSrCaCuO 박막의 부착 특성)

  • Cheon, Min-Woo;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.45-48
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    • 2003
  • BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

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Characteristics of $B_2$Sr_2$$Ca_{n-1}$$Cu_n$$O_x$ Superconducting Thin Films Fabricated by Layer-by-Layer Deposition Method (Layer-by-Layer 증착법으로 제작한 $B_2$Sr_2$$Ca_{n-1}$$Cu_n$$O_x$초전도 박막의 특성)

  • 유선종;천민우;박용필
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.518-521
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    • 2003
  • Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.

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Measurements of Lattice Strain in MOCVD-GaN Thin Film Grown on a Sapphire Substrate Treated by Reactive Ion Beam (활성화 이온빔 처리된 Sapphire기판 위에 성장시킨 MOCVD-GaN 박막의 격자변형량 측정)

  • Kim, Hyun-Jung;Kim, Gyeung-Ho
    • Applied Microscopy
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    • v.30 no.4
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    • pp.337-345
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    • 2000
  • Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

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Ion beam irradiation for surface modification of alignment layers in liquid crystal displays (액정 디스플레이 배향막을 위한 이온빔 표면조사에 관한 연구)

  • Oh, Byeong-Yun;Kim, Byoung-Yong;Lee, Kang-Min;Kim, Young-Hwan;Han, Jeong-Min;Lee, Sang-Keuk;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04a
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    • pp.41-41
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    • 2008
  • In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

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XAS Studies of Ion Irradaited MgO Thin Films

  • Suk, Jae-Kwon;Gautam, Sanjeev;Song, Jin-Ho;Lee, Jae-Yong;Kim, Jae-Yeoul;Kim, Joon-Kon;Song, Jong-Han;Chae, Keun-Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.312-312
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    • 2012
  • Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.

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Microstructure and Mechanical Properties of (Ti,Al)N Films Deposited by Ion Beam Sputtering (이온빔 스퍼터링에 의해 제조된 (Ti,Al)N 박막의 미세구조 및 기계적 특성)

  • Oh, Y.G.;Baeg, C.H.;Hong, J.W.;Wey, M.Y.;Kang, H.J.
    • Journal of the Korean Society for Heat Treatment
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    • v.16 no.6
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    • pp.329-334
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    • 2003
  • Microstructure and mechanical properties of $(Ti_{1-x}Alx)N$ films, Produced by the the Ion Beam Sputtering(IBS) method, were studied by changing the Ti, Al contents. The compositions of films determined by RBS were $(Ti_{0.75}Al_{0.25})N$, $(Ti_{0.61}Al_{0.39})N$ and $(Ti_{0.5}Al_{0.5})N$, and XPS binding energies of Ti2P, A12p and N1s shifted to higher energies than those of pure Ti, Al and N, which indicated that nitrides were formed. XRD results indicated that the NaCl structure for $$x{\leq_-}0.39$$ changed into amorphous structure at x=0.5. For films with $$x{\leq_-}0.39$$, the lattice parameter decreased in proportion to the Al content. Nanoindentation hardness value were above HV=3300 at Al content up to x=0.39. However, the hardness of films with x=0.5 abruptly decreased to HV=1800, and this lower hardness values were attributed to different crystal structure. Critical load(Lc) in scratch test showed 23N at x=0.25, 22N at x=0.39 and 22N at x=0.5, which indicated that films with different Al contents showed similar adhesion behavior.