• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2005.05a
• /
• pp.19-23
• /
• 2005

In order to develop a high brightness ion source using plasma, the ion beam extraction system with an aperture of $100{\mu}m$ in diameter has been designed and constructed. It is observed that over 500nA of He ion beam current can be extracted. With such an optimized condition, $\~10^3\;A/cm^2sr$ beam brightness can be measured by emittance scanner, which is believed to be a promising result for developing next generation FIB.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.5 s.170
• /
• pp.175-180
• /
• 2005

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. In this research, fabrication of micro plasma electrode was carried out using FIB. The one of problems of FIB-sputtering is the redeposition of material including Ga+ ion source during sputtering process. Therefore the effect of the redeposition was verified by EDX. And the micro plasma electrode of copper was fabricated by FIB.

• Journal of Advanced Marine Engineering and Technology
• /
• v.32 no.2
• /
• pp.262-267
• /
• 2008

Plasma immersion ion beam (PIIB) nitriding process is an environmentally benign and cost-effective process, and offers the potential of producing high dose of nitrogen ions in a way of simple, fast and economic technique for the high plasma flux treatment of large surface area with nitrogen ion source gas. In this report PIIB nitriding technique was used for nitriding on austenite stainless steel of AISI304 with plasma treatment at $250{\sim}500^{\circ}C$ for 4 hours, and with the working gas pressure of $2.67{\times}10^{-1}$ Pa in vacuum condition. This PIIB process might prove the advantage of the low energy high flux of ion bombardment and enhance the tribological or mechanical properties of austenite stainless steel by nitriding, Furthermore, PIIB showed a useful surface modification technique for the nitriding an irregularly shaped three dimensional workpiece of austenite stainless steel and for the improvement of surface properties of AISI 304, such as hardness and strength

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.241.1-241.1
• /
• 2014

The large-area high-power radio-frequency (RF) driven ion sources based on the negative hydrogen (deuterium) ion beam extraction are the major components of neutral beam injection (NBI) systems in future large-scale fusion devices such as an ITER and DEMO. Positive hydrogen (deuterium) RF ion sources were the major components of the second NBI system on ASDEX-U tokamak. A test large-area high-power RF ion source (LAHP-RaFIS) has been developed for steady-state operation at the Korea Atomic Energy Research Institute (KAERI) to extract the positive ions, which can be used for the NBI heating and current drive systems in the present fusion devices, and to extract the negative ions for negative ion-based plasma heating and for future fusion devices such as a Fusion Neutron Source and Korea-DEMO. The test RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of RF discharge. The characteristics and uniformities of the plasma parameter in the RF ion source were measured at the lowest area of the expansion bucket using two RF-compensated electrostatic probes along the direction of the short- and long-dimensions of the expansion region. The plasma parameters in the expansion region were characterized by the variation of loaded RF power (voltage) and filling gas pressure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1995.06a
• /
• pp.141-141
• /
• 1995

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.7
• /
• pp.615-619
• /
• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.08a
• /
• pp.215-215
• /
• 2003

• Proceedings of the Korean Vacuum Society Conference
• /
• 2004.02a
• /
• pp.138-138
• /
• 2004

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.24 no.4
• /
• pp.400-406
• /
• 2015

This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.2
• /
• pp.55-57
• /
• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.