• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.75-79
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• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.52-56
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• 2006

Some of factors affecting photo-conversion efficiency of dye sensitized solar cells (DSCs) are discussed in terms of $TiO_2$ electrodes. The first topic is on the surface modification of $TiO_2$ nano-particles, which is associated with electron traps on the surface of $TiO_2$ nano-particles. The surface is modified with dye molecules under pressurized $CO_2$ atmosphere to increase the surface coverage of $TiO_2$ nano-particles with dye molecules. This increases Jsc because of an increase in the amount of dye molecules and a decrease in the amount of trapping sites on $TiO_2$ nano-particles. In addition, the decrease in the amount of trap sites increases Voc because decreases in Voc are brought about by the recombination of $I_2$ molecules with electrons trapped on the $TiO_2$ surfaces. Selective staining for tandem cells is proposed. The second topic is on the contact between a $SnO_2$/F transparent conductive layer (TCL) and nano-particles. Polishing the TCL surfaces with silica nano-particles increases the contact, resulting in Jsc increases. The third topic is the fabrication of ion-paths in $TiO_2$ layers. Electro-spray coating of $TiO_2$ nano-particles onto TCL is shown to be effective for fabricating ion-paths in $TiO_2$ layers, which increases Jsc.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2304-2308
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• 2010

A $LiNi_{0.8}Co_{0.15}Al_{0.05}O_2$ (LNCAO/C) active material composite cathode was coated with carbon. The conductive carbon coating was obtained by addition of surfactant during synthesis. The addition of surfactant led to the formation of an amorphous carbon coating layer on the pristine LNCAO surface. The layer of carbon coating was clearly detected by FE-TEM analysis. In electrochemical performance, although the LNCAO/C showed similar capacity at low C-rate conditions, the rate capability was improved by the form of the carbon coating at high current discharge state. After 40 cycles of charge-discharge processes, the capacity retention of LNCAO/C was better than that of LNCAO. The carbon coating is effectively protected the surface structure of the pristine LNCAO during Li insertion-extraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.82-89
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• 1998

The experimental results using the X -ray technique, the position and structure of mica crystal are not observed the phase change of aging and sound specimen respectively. However, We could observe the intensity difference of crystal element in both atmospheres. The analysis of mica-epoxy materials by optical microscope are shown that the each surface of sound and aging specimens are different in both atmospheres Also, the experimental results have shown that the potassium ions of mica cristal are substituted by hydrogen ions at boundary area of mica-epoxy and/or mica-mica. On components made of mica, a potassium ion of big atomic radius, is replaced by hydrogen ion of small atomic radius. The voids are created by the difference of radius progressed by combined stresses. Through these phenomena, it has been proposed that the conductive layers made of potassium enable the voids to form and the cracks to create by high electric field.

• Journal of the Korean institute of surface engineering
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• v.1 no.1
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• pp.14.1-18
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• 1967

The characteristics of sulfuric acid anodized layer was studied under various Conbitions, acid concentration : 5-20%, temperature : 5-25$^{\circ}C$, bath voltate : 16 volts , bath agitain : mech agitation : mechanical . The Al+++ ion increase in anodizing baty, the film thickness under microscope, the comparative porosity and the thickness were determined. It was found that film thickness and the porosithy which are the main factors of determining andoized layet quality, rule the corrosing and abrasiion tesistance of the film, and that the porosity is increasing in the outerlayer. The formation mechanism was assumed as follows : The film thickness -increase is due to OH_ ion diffusion into compact non-conductive layer and Al+ + OH_ \longrightarrowAl(OH), Al(OH)+ + OH_ \longrightarrowAl(OH)+$_2$ , Al(OH)+$_2$ + OH_ \longrightarrowAl(OH)$_3$., the strong adhesion force is alse due to Al(OH) or Al(OH)$_2$ in transtion layer. And the pore-nucleation is produced by volume change between Al and Al$_2$O$_3$ and activated H$_2$O gas created by large reaction heat of Al+(x) +OH_ \longrightarrowAl(OH)x.

• Nuclear Engineering and Technology
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• v.52 no.1
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• pp.101-108
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• 2020

In order to solve the contradiction between requirements of high sampling rate for acquiring accurate energy information of pulses and large amount of data to be processed timely, the method with an algorithm to correct errors caused by reducing the sampling rate is normally used in front-end read-out system, which is conductive to extract accurate energy information from digitized waveform of pulse. The functions and effects of algorithms, which mainly include polynomial fitting with different fitting times, double exponential function fitting under different sampling modes, and integral area algorithm, are analyzed and evaluated, and some meaningful results is presented in this paper. The algorithm described in the paper has been used preliminarily in a prototype system of Positron Emission Tomography (PET) for heavy-ion cancer therapy facility.

• Corrosion Science and Technology
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• v.22 no.4
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• pp.287-296
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• 2023

Li-ion batteries have been gaining increasing importance, driven by the growing utilization of renewable energy and the expansion of electric vehicles. To meet market demands, it is essential to ensure high energy density and battery safety. All-solid-state batteries (ASSBs) have attracted significant attention as a potential solution. Among the advantages, they operate with an ion-conductive solid electrolyte instead of a liquid electrolyte therefore significantly reducing the risk of fire. In addition, by using high-capacity alternative electrode materials, ASSBs offer a promising opportunity to enhance energy density, making them highly desirable in the automotive and secondary battery industries. In ASSBs, Li metal can be used as the anode, providing a high theoretical capacity (3860 mAh/g). However, challenges related to the high interfacial resistance between Li metal and solid electrolytes and those concerning material degradation during charge-discharge cycles need to be addressed for the successful commercialization of ASSBs. This review introduces and discusses the interfacial reactions between Li metal and solid electrolytes, along with research cases aiming to improve these interactions. Additionally, future development directions in this field are explored.

• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.123-129
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• 1999

Initial electrochemical characteristics of $LiCoO_2$ electrode for lithium ion battery with various content of super s black as conductive material were evaluated through the charge/discharge with the potential range of 4.3V to 2.0V versus $Li^+/Li^+$. The rate of C/4 and C/2 by the 3 electrode test cell composed with an electrolytic solution of 1 mol/l $LiPF_6/EC+DEC(1:3\;by\; weight)$. Lithium was used as reference electrode. High impedance charge behavior was observed at early stage of charge. In the case of $3\%w/w$ of super s black as conductive material, the specific resistance of the high impedance releasing was $3.82\;{\Omega}\;{\cdot}\;g-LiCoCo_2$ at the current density of $0.5 mA/cm^2$, which corresponds 7 times of the specific resistance of electrode $(0.728 g-LiCoO_2)$. At second charge, the specific resistance of the high impedance releasing was 63 mn · g-Lico02, which corresponds 12eio of the specific resistance of electrode and only $1.7\%$ of that of the first charge. The first charge and discharge specific capacities at C/4 rate were 160-161 and $153\~155mAh/g-LiCoO_2$, respectively, to lead $95.4\~96.4\%$ of coulombic efficiencies and ca. $6 mAh/g-LiCoO_2$ of initial irreversible specific capacity. Specific resistance at the end of charge and rest showed low value at content of super s black between 2 and $7\%w/w$, which agreed with characteristics of irreversible specific capacity. Capacity densities were reduced by the increasing the content of conductive material. They were 447 and 431mAh/ml when 2 and $2.9\%w/w$ of super s black were used, respectively, at the rate of C/4.