• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.193-196
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• 1996

A new type of electron emitter device of chemical-vapor-deposited diamond thin film is proposed. The device is a diode of metal-insulator-insulator-semiconductor (MIS) structure consisting of an intrinsic polycrystalline diamond film as the insulator, an aluminium electrode on one side, and hydrogenated diamond surface on the other side as the p-type semconductor with negative electron affinity (NEA). Electrons will be injected and/or excited to the conduction band of intrinsic diamond layer to be emitted from the hydrogenated diamond surface of NEA.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.24 no.9
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• pp.675-681
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• 2014

This paper proposes a fault diagnosis system for an induction motor. This system uses empirical mode decomposition(EMD) to extract fault signatures and multi-layer perceptron(MLP) neural network to facilitate an accurate fault diagnosis. EMD can not only decompose a signal adaptively but also provide intrinsic mode functions(IMFs) containing natural oscillatory modes of the signal. However, every IMF does not represent fault signature, an IMF selection algorithm based on harmonics and their energy of each IMF is proposed. The selected IMFs are utilized for fault classification using MLP and this system shows approximately 98 % diagnosis accuracy for the fault vibration signal of the induction motor.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.115-121
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• 2013

ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as $500^{\circ}C$ by annealing a ZnS precursor layer in air. In the air annealing, the electrical resistivity decreased monotonically with increasing annealing temperature; the intensity of the green photoluminescence at 505 nm increased up to $750^{\circ}C$ annealing. The electrical resistivity further decreased and the intensity of green emission also increased in reducing atmospheres. The results suggest that deep-level defects originated by oxygen vacancy enhanced green emission, which reduce light transmittance and enhance the recombination of electrons in conduction band and holes in valence. More oxidizing environment is necessary to obtain defect-free ZnO film for higher transparency.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.788-791
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• 2006

The ion adsorption on an aligning layer deposited onto a conductive electrode in a liquid crystal (LC) cell has been shown to depend strongly on the dielectric constants of the layer and its thickness d. Calculations made in the framework of the three-layer electrostatic theory showed that, depending on those and other intrinsic parameter of the problems, it is possible to observe either ion attraction or repulsion at the aligning surface. Tentative measurements of the ion adsorption dynamics on the aligning layers with various d qualitatively agree with the theory. The results obtained allow the memory effect in LCs and the sticking effect in LC displays (LCDs) to be controlled effectively.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.205-208
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• 2001

Schottky barrier diodes are fabricated on a intrinsic GaN(4${\mu}{\textrm}{m}$) epitaxial structure grown by rf plasma molecular beam epitaxy (MBE) on sapphire substrates. First, We make Ohmic electrodes (Ti/Al/Ti/Au) by evaporator. Next, we contact RuO$_2$ by dipping in the solution (RuCl$_3$.HClO$_4$), and then we deposit Ni/Au on the surface of RuO$_2$ by evaporator. We study the electrical characteristics of GaN Schottky barrier diodes made by these methods. Measurements are C-V, I-V, SEM, EDX, and XRD for the characteristics of devices. Thickness of RuO$_2$ layer depends on supplied voltage and dipping time. Device of thinner RuO$_2$ layer have a good Schottky characteristics compare with device of thicker RuO$_2$ layer

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2007.04a
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• pp.309-314
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• 2007

Optimal layer sequencing of a multi-layered acoustical foam is solved to maximize its sound transmission loss. A foam consisting of air and poroelastic layers can be optimized when a limited amount of a poroelastic material is allowed. By formulating the sound transmission loss maximization problem as a one dimensional topology optimization problem, optimal layer sequencing and thickness were systematically found for several frequencies. For optimization, the transmission losses of air and poroelastic layers were calculated by the transfer matrix derived from Biot's theory. By interpolating five intrinsic parameters among several poroelastic material parameters, dear air-poroelastic layer distributions were obtained; no filtering or post-processing was necessary. The optimized foam layouts by the proposed method were shown to differ depending on the frequency of interest.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Journal of Magnetics
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• v.7 no.3
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• pp.115-125
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• 2002

We proposed a novel method to evaluate the magnetic properties of the initial layer and the columnar structure separately for CoCr-based perpendicular recording media. We show that the thickness of the initial layer and the intrinsic magnetocrystalline anisotropy of columnar structure can be quantitatively evaluated using the plotted product of perpendicular anisotropy to magnetic film thickness versus magnetic film thickness ($K_{u{\bot}}^{ex{p.}}$ $\times$ d$_{mag.}$ vs. d$_{mag.}$ plot). Based on the analyses, it is found that: (1) compared with CoCrPtTa media, CoCrPtB media have relatively thin initial layer, and have fine grains with homogeneous columnar structure with c-plane crystallographic orientation; (2) CoCrPtB media can be grown epitaxially on Ru or CoCr/C intermediate layer, and as the result, the magnetic properties of the media within thin thickness region of d$_{mag.}$ $\leq$ 20 nm is significantly improved; (3) the key issue of material investigation for CoCr-based perpendicular recording media will be focused on how to fabricate c-plane-oriented columnar grains well isolated with nonmagnetic substance in epitaxial-growth media, while maintaining the thermal stability of the media.