• 한국진공학회지
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• 제16권5호
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• pp.371-376
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• 2007

분자선 에피택시(molecular beam epitaxy, MBE)로 성장된 InGaAs 양자점 레이저 다이오드(quantum dot laser diode, QD-LD)와 InGaAs 양자우물 레이저 다이오드(quantum well laser diode, QW-LD)의 특성을 비교하였다. 펄스 입력전류 하에서 문턱전류밀도(threshold current density, $J_{th}$), 특성온도(characteristic temperature, $T_0$), 온도에 따른 발진파장의 변화도($d{\lambda}/dT$)를 측정한 결과, 양자우물 레이저 다이오드는 $J_{th}\;=\;322\;A/cm^2,\;T_0\;=\;55.2\;K,\;d{\lambda}/dT\;=\;0.41\;nm/^{\circ}C$로 측정되었으며, 양자점 레이저 다이오드는 $J_{th}\;=\;116\;A/cm^2,\;T_0\;=\;81.8\;K,\;d{\lambda}/dT\;=\;0.33\;nm/^{\circ}C$로 측정되었다. 양자점 레이저 다이오드는 양자우물 레이저 다이오드와 비교하였을 때, 문턱전류밀도 및 발진 광 파워가 상대적으로 우수한 결과를 보여주었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.23.2-23.2
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• 2011

This presentation will include an overview of III-Nitride LED technology, applications, key areas for future improvements, challenges such as efficiency droop. GaN-based high-power light-emitting diodes (LEDs) suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents, a well-known phenomenon commonly referred to as efficiency droop. Although many attempts have been made to uncover this LED's darkest secret, there is still a lack of consensus on the dominant mechanism responsible for this detrimental phenomenon. In this presentation, proposed origins and corresponding solutions to the droop-causing mechanisms will be reviewed and discussed.

• Journal of Power Electronics
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• 제13권2호
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• pp.275-286
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• 2013

An explicit frequency-domain circuit model for the conventional coupled magnetic resonance system (CMRS) is newly proposed in this paper. Detail circuit parameters such as the leakage inductances, magnetizing inductances, turn-ratios, internal coil resistances, and source/load resistances are explicitly included in the model. Accurate overall system efficiency, DC gain, and key design parameters are deduced from the model in closed form equations, which were not available in previous works. It has been found that the CMRS can be simply described by an equivalent voltage source, resistances, and ideal transformers when it is resonated to a specified frequency in the steady state. It has been identified that the voltage gain of the CMRS was saturated to a specific value although the source side or the load side coils were strongly coupled. The phase differences between adjacent coils were ${\pi}/2$, which should be considered for the EMF cancellations. The analysis results were verified by simulations and experiments. A detailed circuit-parameter-based model was verified by experiments for 500 kHz by using a new experimental kit with a class-E inverter. The experiments showed a transfer of 1.38 W and a 40 % coil to coil efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.7-11
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• 2011

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.131-131
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• 2010

The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

• 한국재료학회지
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• 제18권11호
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• pp.571-576
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• 2008

The simulation program for solar cells, PC1D, was briefly reviewed and the device modeling of a multicrystalline Si solar cell using the program was carried out to understand the internal operating principles. The effects of design parameters on the light absorption and the quantum efficiency were investigated and strategies to reduce carrier recombination, such as back surface field and surface passivation, were also characterized with the numerical simulation. In every step of the process, efficiency improvements for the key performance characteristics of the model device were determined and compared with the properties of the solar cell, whose efficiency (20.3%) has been confirmed as the highest in multicrystalline Si devices. In this simulation work, it was found that the conversion efficiency of the prototype model (13.6%) can be increased up to 20.7% after the optimization of design parameters.

• 한국진공학회지
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• 제18권1호
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• pp.37-43
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• 2009

$In_xGa_{1-x}N$/GaN 다중양자우물 구조의 EL 특성을 온도와 주입전류 변화에 따른 특성을 조사하였다 저전류와 고전류 주입시 EL 효율의 온도 의존 변화는 매우 다르게 나타나는데, 이러한 온도와 전류의 변화에 의한 독특한 EL 효율의 변화는 내부전기장의 존재 하에 순방향 바이어스에 기인한 외부전기장의 영향인 것으로 볼 수 있다. 그리고 $In_xGa_{1-x}N$/GaN 다중양자우물 구조에서 In 성비의 증가는 발광파장위치의 적색이동을 보였다. 15K에서 주입 전류의 증가에 따라 녹색 양자우물 구조는 80 meV와 청색 양자우물 구조는 22 meV의 청색 편이를 하였다. 이는 전류의 증가에 의해 단위 시간당 생성되는 캐리어 수가증가하게 되고 그에 따라 subband가 급격히 채워지는 band filling 현상이 일어나게 되어 짧은 파장에서 재결합이 증가하기 때문이다. 그리고 청색과 녹색 다중 양자우물구조의 짧은 파장 쪽으로의 편이 차이는 In 농도에 기인한 것으로 In 농도가 높으면 양자우물 깊이가 증가되어 더 강한 양자속박효과가 작용하여 캐리어 구속력이 증가하기 때문 것으로 볼 수 있다.

• 마이크로전자및패키징학회지
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• 제28권4호
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• pp.85-89
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• 2021

AlGaN 기반 UV-C 발광다이오드(LEDs)에 전기화학적 전위차 활성화(EPA)에 의한 p-형 활성화를 진행하였다. 높은 저항과 낮은 전도도를 유발하는 중성 Mg-H의 복합체의 수소원자를 EPA를 이용하여 제거하여 p-형 활성화 효율을 높였다. 중성 Mg-H 복합체는 주요 매개 변수인 용액, 전압, 시간에 의해 Mg^-과 H⁺로 분해되며, 2차 이온질량 분광법(SIMS) 분석을 통하여 개선된 정공 캐리어의 농도를 확인할 수 있었다. 이 메커니즘은 결국 내부 양자효율(IQE)의 증가, 광 추출 효율 향상, 역 전류 영역의 누설전류 값 개선, 접합 온도 개선 등을 이루어 결과적으로 UV-C LED의 수명을 향상시켰다. 체계적인 분석을 위해 SIMS, Etamax IQE 시스템, 적분구, 전류-전압(I-V) 측정 등을 사용하였으며, 그 결과를 기존의 N₂-열 처리 방법과 비교 평가하였다.