• Title/Summary/Keyword: Interlayer material

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Mode I and Mode II Analyses of a Crack Normal to the Graded Interlayer in Bonded Materials

  • Park, Hyung-Jip
    • Journal of Mechanical Science and Technology
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    • v.15 no.10
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    • pp.1386-1397
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    • 2001
  • In this paper, the plane elasticity equations are used to investigate the in-plane normal (mode I) and shear (mode II) behavior of a crack perpendicular to and terminating at the interface in bonded media with a graded interfacial zone. The interfacial Bone is treated as a nonhomogeneous interlayer with the continuously varying elastic modulus between the two dissimilar, homogeneous semi-infinite constituents. For each of the individual loading modes, based on the Fourier integral transform technique, a singular integral equation with a Cauchy kernel is derived in a separate but parallel manner. In the numerical results, the values of corresponding modes of stress intensity factors are illustrated for various combinations of material and geometric parameters of the bonded media in conjunction with the effect of the material nonhomogeneity within the graded interfacial zone.

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CrC Interlayer Effect on Tribological Properties of Amorphous Carbon Deposited by UBMS Method (비대칭 마그네트론 스퍼터로 증착된 비정질 탄소박막의 트라이볼로지 특성에서 CrC 삽입층 효과에 대한 연구)

  • Kim, Phil Jung;Park, Yong Seob
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.7
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    • pp.475-480
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    • 2018
  • We investigated the tribological properties of amorphous carbon (a-C) films deposited with CrC interlayers of various thicknesses as the adhesive layer. A-C and CrC thin films were deposited using the unbalanced magnetron (UBM) sputtering method with graphite and chromium as the targets. CrC films as the interlayer were fabricated under a-C films, and various structural, surface, and tribological properties of a-C films deposited with various CrC interlayer thicknesses were investigated. With various CrC interlayer thicknesses under a-C films, the tribological properties of CrC/a-C films were improved; the increased film thickness exhibited a maximum high hardness of over 27.5 GPa, high elastic modulus of over 242 GPa, critical load of 31 N, residual stress of 1.85 GPa, and a smooth surface below 0.09 nm at the condition of 30-nm CrC thickness.

Influence of the Ag interlayer on the structural, optical, and electrical properties of ZTO/Ag/ ZTO films

  • Gong, Tae-Kyung;Moon, Hyun-Joo;Kim, Daeil
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.2
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    • pp.121-124
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    • 2016
  • ZnSnO3 (ZTO)/Ag/ ZnSnO3 (ZTO) trilayer films were prepared on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering. The electrical resistivity and optical transmittance of the films were investigated as a function of the Ag interlayer thickness. ZTO films with a 15 nm thick Ag interlayer show the highest average visible transmittance (83.2%) in the visible range. In this study, the highest figure of merit (2.1×10−2 Ω cm) is obtained with the ZTO 50 nm/Ag 15 nm/ZTO 50 nm films. The enhanced optical and electrical properties of ZTO films with a 15 nm thick Ag interlayer are attributed to the crystallization of the Ag interlayer, as supported by the distinct XRD pattern of the Ag (111) peaks. From the observed results, higher optical and electrical performance of the ZTO film with a 15 nm thick Ag interlayer seems to make a promising alternative to conventional transparent conductive ITO films.

Interlayer Formation During the Reactive DC Magnetron Sputtering Process (직류 마그네트론 스퍼터링 공정 중 타겟 오염에 따른 박막 및 계면 형성 특성)

  • Lee, Jin Young;Hur, I Min;Lee, Jae-Ok;Kang, Woo Seok
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.1
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    • pp.1-4
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    • 2019
  • Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

Electrochemical Properties of Carbonized Phenol Resin (탄화된 페놀레진의 전기화학적 성질)

  • 김한주;박종은;홍지숙;류부형;박수길
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.629-632
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    • 1999
  • For replacing Li metal ai Lithium ton Bakery(LIB) system. we used carbon powder material which prepared by pyrolysis of phenol resin as starting material. It became amorphous carbon by pyrolysis through it\`s self condensation by thermal treatment. Amorphous carbon can be doped with Li intercalation and deintercalation because it has wide interlayer. however it has a problem with structural destroy causing weak carbon-carbon bond. So. we used ZnCl$_2$ as the pore-forming agent. This inorganic salt used together with the resin serves not only as the pore-forming agent to form open pores, which grow Into a three-dimensional network structure in the cured material, foul also as the microstructure-controlling agent to form a loose structure dope with bulky dopants. We analyzed SEM in order to find to different of structure. and can calculate distance of interlayer. CV test showed oxidation and reduction

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XPS Study of MoO3 Interlayer Between Aluminum Electrode and Inkjet-Printed Zinc Tin Oxide for Thin-Film Transistor

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.6
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    • pp.267-270
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    • 2011
  • In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

Novel Phenol Resin Carbonizing Method for Carbon Interlayer Coating between Reinforcing Fiber and Matrix in Fiber Reinforced Ceramic Composite (페놀수지 탄화 코팅법을 이용한 섬유강화 복합재료 계면 형성에 관한 연구)

  • Kim, Se-Young;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.46 no.3
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    • pp.301-305
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    • 2009
  • The novel carbon coating process for interlayer of fiber reinforced ceramic composites between fiber and matrix was performed by carbonizing phenolic resin solution that coated on fiber surface in $N_2$ atmosphere at $600^{\circ}C$ to improve the strength and fracture toughness of CMC(ceramic matrix composite). 160 nm carbon layer was coated on fiber surface with 5 vol% of phenolic resin solution. Since the process temperature ($600^{\circ}C$) is lower than chemical vapor deposition($900{\sim}1000^{\circ}C$), the strength and toughness could be preserved. Furthermore the coating thickness uniformity was improved to 8% of deviation along the stacking sequence. Therefore, prevention from fiber degradation during coating process and controlling coating thickness uniformity along the preform depth were achieved by coating with phenolic resin carbonizing method.

Improvement of Thermal Stability of Ni-InGaAs Using Pd Interlayer for n-InGaAs MOSFETs (n-InGaAs MOSFETs을 위한 Pd 중간층을 이용한 Ni-InGaAs의 열 안정성 개선)

  • Li, Meng;Shin, Geonho;Lee, Jeongchan;Oh, Jungwoo;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.3
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    • pp.141-145
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    • 2018
  • Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

Characteristics of tungsten coated graphite using vacuum plasma spraying method

  • Lim, Hyeonmi;Kang, Boram;Kim, Hoseok;Hong, Bong Guen
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.200.1-200.1
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    • 2016
  • Tungsten coatings on the graphite (CX-2320) were successfully deposited using the vacuum plasma spraying (VPS) method. An optimum coating procedure was developed and coating thicknesses of $409{\mu}m$ (without an interlayer) and $378{\mu}m$ (with an interlayer) were obtained with no cracks and no signs of delamination. The mechanical characteristics and microstructure of the tungsten coating layers were investigated using a Vickers hardness tester, FE-SEM, EDS, and XRD. The effect of a titanium interlayer on the properties of the tungsten coating was investigated. It was shown that the titanium interlayer prevented the diffusion of carbon to the tungsten layer, thereby suppressing the formation of tungsten carbide. Vickers hardness data yielded values that were 62.5 ~ 80.46% of those for bulk tungsten, indicating that tungsten coatings on graphite can be utilized as a plasma-facing material. High heat flux tests were performed by using thermal plasma with a maximum flux of $10MW/^2$. Vickers hardness after the heat flux test is performed to see a change in the mechanical properties. The formationof a tungsten carbide and the effect of the titanium interlayer for the diffusion barrier are investigated by using energy dispersion spectroscopy (EDS).

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Effect of Interlayer Materials on Bending Strength and Reliability of Si$_3$N$_4$/S. S316 Joint (Si$_3$N$_4$/S. S316 접합에서 중간재가 접합강도 및 신회도에 미치는 영향)

  • 윤호욱;박상환;최성민;임연수;정윤중
    • Journal of the Korean Ceramic Society
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    • v.35 no.3
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    • pp.219-230
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    • 1998
  • Various interlayer materials have been tested for active metal(Cusil ABA) brazing of Si3N4/S. S316 joint. In general multilayer joint had higher strength(80-150 MPa) and better reliability than monolayered one. The joint with Cu(0.2)/Mo(0.3)/Cu(0.2mm) interlayer showed the highest bending strength of abou 490 MPa and the joint with Cu(0.2)/Mo(0.3mm) interlayer the best reliability (14.6 Weibull modulus). The stresses distributed in joint materials during 4-point bending test were estimated by CAE von Mises analysis; the estimated stresses were In good agreement with the measured data. In multilayer joint Cu was though to reduce the residual stresses induced by the difference in thermal expansion coefficient between the ceramic Mo and metal It apperared that a Cu/Mo was optimum interlayer material for Si3N4/S. S316 joint with high bending strength (420 MPa) and reliability. In addition the various shapes and types of compound were examined by EPMA in joining interface.

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