• Structural Engineering and Mechanics
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• v.67 no.2
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• pp.175-183
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• 2018

This research deals with the wave dispersion analysis of functionally graded double-layered nanobeam systems (FG-DNBSs) considering the piezoelectric effect based on nonlocal strain gradient theory. The nanobeam is modeled via Euler-Bernoulli beam theory. Material properties are considered to change gradually along the nanobeams' thickness on the basis of the rule of mixture. By implementing a Hamiltonian approach, the Euler-Lagrange equations of piezoelectric FG-DNBSs are obtained. Furthermore, applying an analytical solution, the dispersion relations of smart FG-DNBSs are derived by solving an eigenvalue problem. The effects of various parameters such as nonlocality, length scale parameter, interlayer stiffness, applied electric voltage, relative motions and gradient index on the wave dispersion characteristics of nanoscale beam have been investigated. Also, validity of reported results is proven in the framework of a diagram showing the convergence of this model's curve with that of a previous published attempt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.67-67
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• 2008

Application of organic materials with low cost, easy fabrication and advantages of flexible device are increasing attention by research work. Recently, one of them, organic solar cells were rapidly increased efficiency with regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyricacidmethylester (PCBM) used typical material. To increased efficiency of organic solar cell has tried control of domain of PCBM and crystallite of P3HT by thermal annealing and solvent vapor annealing. [4-6] In those annealing effects, be made inefficiently efficiency, which is increased fill factor (FF), and current density by phase-separated morphology with blended P3HT and PCBM. In addition, increased conductivity by modified hole transfer layer (HTL) such as Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), increased both optical and conducting effect by titanium oxide (TiOx), and changed cathode material for control work function were increased efficiency of Organic solar cell. In this study, we had described effect of organic photovoltaics by conductivity of interlayer such as PEDOT:PSS and TCO (Transparent conducting oxide) such as ITO, which is used P3HT and PCBM. And, we have measured with exactly defined shadow mask to study effect of solar cell efficiency according to conductivity of hole transfer layer.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.242-247
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• 2009

On the Transient Liquid Phase Bonding (TLPB) phenomenon with the MBF-50 insert metal at narrow gap (under 100), it takes long time for the bonding and the homogenizing. Typically, isothermal solidification is controlled by the diffusion of depressed element of B and Si. However, the amount of B and Si in the MBF-50 filler metal is large. This is reason of the long bonding time. Also, the MBF-50 filler metal did not contained Al and Ti which are ${\gamma}^{\prime}$ phases former. This is reason of the long homogenizing time. From the bonding phenomenon with the MBF-50 insert metal, we search main factors on the bonding mechanism and select several insert-metals for using the wide-gap TLPB. New insert-metals contained Al and Ti which are ${\gamma}^{\prime}$ phases former and decrease the B then the MBF-50. When the new insert-metal was used on the TLPB, the bonding time was decreased about 1/10 times and homogenizing heat treatment was no needed. In spite of the without homogenizing, the volume fraction of ${\gamma}^{\prime}$ phases in the boned interlayer was equal to homogenizing heat treated specimen which was TLPB with the MBF-50. Finally, the new insert metal named WG1 for the wide-gap TLPB is more efficient then the MBF-50 filler metal without decreasing the bonding characteristic.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.61-68
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• 1999

To analyze several defects and residual stress in sintering of layer structure materials, multiayer materials with TZP/SUS and ZT/SUS, and bilayer materials with porcelain/alumina and porcelain/Y-TZP were fabricated by sintering method. Multilayer materials prepared by pressureless sintering show the sintering defect such as warping, splitting, cracking originated from the difference of sintering shrinkage between each layer, which could be controlled by the adjustment of number and thickness in interlayer. In tape casting, a certain pressure given during sintering relaxed the sintering defects, specially warping. The residual stress in bilayer was examined with Vickers indentation method. A small tensile stress in porcelain/alumina and a large compressive stress in porcelain/Y-TZP were generated on the porcelain interface due to the thermal expansion mismatch, which affected the strength of bilayer materials. As a consequence, the sintering defects of multilayer materials and the residual stresses of bilayer materials were dominantly influenced on material design and starting material constants.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4491-4498
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• 2022

The thermal stress between W plasma-facing material (PFM) and Cu heat sink in fusion reactors can be significantly reduced by using a W-Cu functionally graded material (W-Cu FGM) interlayer. However, there is still considerable stress at the joining interface between W and W-Cu FGM in the W/W-Cu FGM/Cu portions. In this work, we fabricate W skeletons with continuous gradients in porosity by a modified sedimentation method. Sintering densification behavior and pore characteristics of the sedimented W skeletons at different sintering temperatures were investigated. After Cu infiltration, the final W-Cu FGM was obtained. The results indicate that the pore size and porosity in the W skeleton decrease gradually with the increase of sintering temperature, but the increase of skeleton sintering temperature does not reduce the gradient range of composition distribution of the final prepared W-Cu FGM. And W-Cu FGM with composition distribution from pure W to W-20.5wt.% Cu layer across the section was successfully obtained. The thickness of the pure W layer is about one-fifth of the whole sample thickness. In addition, the prepared W-Cu FGM has a relative density of 94.5 % and thermal conductivity of 185 W/(m·K). The W-Cu FGM prepared in this work may provide a good solution to alleviate the thermal stress between W PFM and Cu heat sink in the fusion reactors.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.338-343
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• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.169-172
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• 2009

The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.33-36
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• 1986

The $PbTiO_3$is well known materials having remarkable ferroelectric piezoelectric and pyro-electric properties. Thin films of the lead titanite has been successfully fabricated by Chemical Vapor Deposition on the borosilicate glass and titanium substrate. The $PbTiO_3$ thin film deposited on the borosilicate glass using the $PbCl_2$, $TiCl_4$ dry oxygen and wet oxygen at different temperatures (50$0^{\circ}C$-$700^{\circ}C$) grows along the (001) preferred orientation. On the other hand the $PbTiO_3$ thin film deposited on the titanium substrate using the PbO grows along the (101) preferred orientation. Growth orientation of deposited $PbTiO_3$ depends on the reaction species irrespective of substrate materials. Maximum dielectic constant and loss tangent of the $PbTiO_3$ thin film deposited on the titanium substrate are about 90 and 0.02 respectively, . Deposition rates of $PbTiO_3$ deposited on the borosilicate glass and titanium substrate are 10-15 ${\mu}{\textrm}{m}$/hr. Titanium dioxide interlayer formed be-tween $PbTiO_3$ film and titanium substrate material, It improved the adhesion of the film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.72-72
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• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.709-716
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• 1999

Ceramic is select for an alternative substrate material for high-speed circuits due to its low-thermal expansion. As, in this study, ceramic was prepared by ISG (interlayer sol-gel) process using metal salts and a metal alkoxide as the starting materials. Generally ceramic substrate is used electroless copper plating for the metallization. But it has been indicate weakely the adhesion strength between the substrate and copper layer. Therefore, this research, using the ISG process on the preparation of homogeneous and possible preparation at law temperature fabricated sol solution. Using of the dip coating method was coated for the purpose of giving the anchoring effect on the coating layer and enhancing the adhesion strength between the $Al_2$O$_3$ substrate and copper layer. This study examined primary the characteristic of the sol making condition and differential thermal analysis (DTA) X-ray diffraction (XRD) were mearsured to identify the crystal phase of heat treatment specimens. The morphology of the coated films were studied by scanning electron microscopy(SEM). As a resurt, XRD analysis was obtained patterns of $\alpha$-cordierite after heat-treatment about 2 hours at $1000^{\circ}C$. SEM analysis could have seen a large number of voids on coated film. The more contants of$ Al_2$$O_3$ Wt% was increased the more voids was advanced. Peel adhesion strength has a maximum in the contants of the TEOS:ANE of 1:0.7 mole%. In this case, adhesion strength has been measured 1150gf, peel adhesion strength were about 10 times more than uncoated of the ceramics film.