• Journal of Electrochemical Science and Technology
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• 제12권2호
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• pp.230-236
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• 2021

Ionic conduction mechanism of Mg-Al layered double hydroxides (LDHs) intercalated with CO₃^2- (Mg-Al CO₃^2- LDH) was studied. The electromotive force for the water vapor concentration cell using Mg-Al CO₃^2- LDH as electrolyte showed water vapor partial pressure dependence and obeyed the Nernst equation, indicating that the hydroxide ion transport number of Mg-Al CO₃^2- LDH is almost unity. The ionic conductivity of Mg(OH)₂, MgCO₃ and Al₂(CO₃)₃ was also examined. Only Al₂(CO₃)₃ showed high hydroxide ion conductivity of the order of 10^-4 S cm^-1 under 80% relative humidity, suggesting that Al₂(CO₃)₃ is an ion conducting material and related to the generation of carrier by interaction with water. To discuss the ionic conduction mechanism, Mg-Al CO₃^2- LDH having deuterium water as interlayer water (Mg-Al CO₃^2- LDH(D₂O)) was prepared. After the adsorbed water molecules on the surface of Mg-Al CO₃^2- LDH(D₂O) were removed by drying, DC polarization test for dried Mg-Al CO₃^2- LDH(D₂O) was examined. The absorbance attributed to O-D-stretching band for Mg-Al CO₃^2- LDH(D₂O) powder at around the positively charged electrode is larger than that before polarization, indicating that the interlayer in Mg-Al CO₃^2- LDH is a hydroxide ion conduction channel.

• Composites Research
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• 제36권4호
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• pp.275-280
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• 2023

고분자 기반 복합재료는 가볍고 우수한 물성을 가지고 있기 때문에, 단일 소재가 갖기 어려운 물성을 충족하기 위한 방법으로서 그 수요는 급격하게 증가되고 있다. 그에 따라, 크기가 1-100 nm를 갖는 입자를 고분자 기지에 분산시켜 제작하는 고분자 나노 복합재료에 대한 연구가 많이 진행되고 있다. 그리고, 나노입자 강화 복합재의 기지 재료로 열가소성 수지를 사용한 복합재료 연구를 많이 진행하고 있다. 본 연구를 통해 세틸트리메틸암모늄브로마이드(CTAB)으로 층간 물질을 개질한 유기 나노 점토가 포함된 폴리(에틸렌 테레프탈레이트)(PET) 기반 나노 복합체를 제조하였다. 다양한 나노 점토 중에서, 질석 (vermiculite, VMT)은 저가이며 풍부한 매장량과 고유의 물성으로 인해 고분자 재료의 기계적 및 열적 특성을 증가시키는 연구들이 수행되고 있다. 하지만, VMT의 강한 층간 결합으로 인해 고분자 기지 내에서 박리 및 분산 성능이 낮아 그 활용이 제한되었다. 본 연구에서는 나노 점토의 함유량에 따른 기계적 물성을 인장 시험으로 확인하였고, 나노 점토 입자가 PET 기재 내에 분산되는 정도를 TEM 단면 사진으로 평가하고, 그리고 질소 가스 차단 특성을 측정하였다.

• 대한환경공학회지
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• 제38권6호
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• pp.291-298
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• 2016

불용성 전극은 전기화학 공정에 있어 가장 핵심적인 소재이며, 이를 이용한 전기화학적 수처리 공정은 난분해성 물질을 제거하는 유용한 방법으로서 이에 대한 연구가 지속적으로 이루어져 오고 있다. 전기화학적 수처리 공정은 주로 산화전극에서의 산화반응과 환원전극에서의 환원반응을 이용하는 것이다. 본 연구에서는 불용성 전극의 제조공정에서 전처리 방법이 전극의 수명에 미치는 영향을 평가하였다. 실험결과 촉매전극층을 코팅하는 물질계 및 코팅방법을 동일하게 하는 경우에도 기판의 전처리 방법 즉, 기판표면의 조도, 세정방법, 중간층 형성 여부 및 방법 등에 따라 전극의 수명이 크게 달라지는 것을 확인하였다. 실험은 가장 많이 사용되는 전극의 하나인 $IrO_2/Ti$ 전극을 대상으로 하였다. 샌드 블라스팅 공정의 경우 입도를 달리하는 샌딩 미디어를 이용하여 전극을 제조하고 이에 대한 수명을 평가한 결과 #80알루미나(입도 $212{\sim}180{\mu}m$)를 이용하는 경우가 가장 효과적인 것으로 나타났다. 기판에 대한 세정 공정은 arc plasma를 이용하는 것이 가장 우수하였으며, 중간층을 형성함에 있어서는 스퍼터링법을 이용하여 Ta 계열의 중간층을 형성하는 방법을 적용하는 것이 가장 바람직한 것으로 확인되었다.

• Nuclear Engineering and Technology
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• 제42권6호
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• pp.662-669
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• 2010

To develop the manufacturing methods for the blanket first wall (FW) of the International Thermonuclear Experimental Reactor (ITER) and to verify the integrity of the joint, Be/Cu mockups were fabricated and tested at the KoHLT-1 (Korea Heat Load Test facility), a graphite heater facility located at the Korea Atomic Energy Research Institute (KAERI). Since Be and Cu joining is the focus of the present study, the fabricated mockups had a CuCrZr heat sink joined with three Be tiles as an armor material, unlike the original ITER blanket FW, which has a stainless steel structure and coolant tubes. Hot isostatic pressing (HIP) was carried out at $580^{\circ}C$ and 100 MPa for 2 hours as the method for Be/Cu joining. Three interlayers, namely, $1{\mu}mCr/10{\mu}mCu$, $1{\mu}mTi/0.5{\mu}mCr/10{\mu}mCu$, and $5{\mu}mTi/10{\mu}mCu$ were applied as a coating to the Be tiles by a physical vapor deposition (PVD) method. A shear test was performed with the specimens, which were fabricated by the same methods as those used to fabricate the mockups. The average values were 125 MPa to 180 MPa, and the samples with the $1{\mu}mCr/10{\mu}mCu$ interlayer showed the lowest value. No defect or delamination was found in the joints of the mockups by the developed ultrasonic test using a flat-type probe with a 10 MHz frequency and a 0.25 inch diameter. High heat flux (HHF) tests were performed at $1.0\;MW/m^2$ heat flux for each mockup using the given conditions, and the results were analyzed by ANSYS-CFX code. For the test criteria, an expected fatigue lifetime about 1,000 cycles was obtained by analysis with ANSYS-mechanical code. Mockups using the interlayers of $1{\mu}mTi/0.5{\mu}mCr/10{\mu}mCu$ and $5{\mu}mTi/10{\mu}mCu$ survived up to 1,100 cycles over the required number of cycles. However, one of the Be tiles in the other two mockups using the $1{\mu}mCr/10{\mu}mCu$ interlayer was detached during the screening test, and others were detached by discharge after 862 cycles. The integrity of the joints using the proposed interlayers was proven by the HHF test, but the other interlayer requires more study before it can be used for the joining of Be to Cu. Moreover, it was confirmed that the measured temperatures agreed well with the analysis temperatures, which were used to estimate the lifetime and that the developed facility showed its capability of the long time operation.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1049-1055
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• 2004

Chemical Mechanical Polishing (CMP) is referred to as a three body tribological system, because it includes two solids in relative motion and the CMP slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason not only for the friction force but also for material removal during polishing, the friction force generated during CMP process was investigated with the change of abrasive size and concentration of CMP slurry. The threshold point of average coefficient of friction (COF) with increase in abrasives concentration during interlayer dielectric (ILD) CMP was found experimentally and verified mathematically based on contact mechanics. The predictable models, Mode I (wafer is in contact with abrasives and pad) and Mode II (wafer is in contact with abrasives only), were proposed and used to explain the threshold point. The average COF value increased in the low abrasives concentration region which might be explained by Mode I. In contrast the average COF value decreased at high abrasives concentration which might be regarded to as Mode II. The threshold point observed seemed to be due to the transition from Mode I to Mode II. The tendency of threshold point with the variation of abrasive size was studied. The increase of particle radius could cause contact status to reach transition area faster. The correlation between COF and material removal rate was also investigated from the tribological and energetic point of view. Due to the energy loss by vibration of polishing equipment, COF value is not proportional to the material removal rate in this experiment.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.291-296
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• 2014

In recent years, researchers have extensively investigated polymers filled with inorganic nanoparticles because these materials present improved physical properties relative to those of conventional unfilled polymers. Oxides, silica in particular, are the most commonly used inorganic particles because they possess good properties and can be fabricated at a low cost. However, oxides are hydrophilic in nature, and this leads to the presence of water at the interface between the nanoparticles and the polymer matrix. Due to the predominance of particle-matrix interfaces in nanocomposites, the presence of water at the interlayer region can be problematic. Moreover, the hydrophobic nature of most polymers, particularly for polyolefins such as polyethylene, may make it difficult to remove this interfacial water. In this paper, as-received and moistened samples of agglomerated nanosilica/polyethylene were dried using an isothermal treatment at $60^{\circ}C$, and the efficacy of this treatment was studied using dielectric spectroscopy. The Maxwell-Wagner-Sillars relaxation peaks were observed to shift to lower frequencies by three decades, and this was linked to a modification of the water content, due to drying, at the interfaces between silica and polyethylene and at the interfaces within the nanosilica agglomerates. The evolution of the extracted retardation time is explained by the nanosilica hydrophily and the free volume introduced by the nanoparticles.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1090-1095
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• 2008

The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• Geomechanics and Engineering
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• 제15권2호
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• pp.783-791
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• 2018

In consideration of the mesoscopic structure of soil-rock mixtures in which the rock aggregates are wrapped by soil at normal temperatures, a two-layer embedded model of single-inclusion composite material was built to calculate the shear modulus of soil-rock mixtures. At a freezing temperature, an interface ice interlayer was placed between the soil and rock interface in the mesoscopic structure of the soil-rock mixtures. Considering that, a three-layer embedded model of double-inclusion composite materials and a multi-step multiphase micromechanics model were then built to calculate the shear modulus of the frozen soil-rock mixtures. Given the effect of pore structure of soil-rock mixtures at normal temperatures, its shear modulus was also calculated by using of the three-layer embedded model. Experimental comparison showed that compared with the two-layer embedded model, the effect predicted by the three-layer embedded model of the soil-rock mixtures was better. The shear modulus of the soil-rock mixtures gradually increased with the increase in rock regardless of temperature, and the increment rate of the shear modulus increased rapidly particularly when the rock content ranged from 50% to 70%. The shear modulus of the frozen soil-rock mixtures was nearly 3.7 times higher than that of the soil-rock mixtures at a normal temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.8-11
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• 1997

This study makes SrTiO$_{3}$ with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO$_{3}$ and Si/Ti/SrTiO$_{3}$ of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption rate, permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the pea\ulcorner of permittivity value of Ti/SrTiO$_{3}$ thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory In the nature of permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO$_{3}$ has lower values in reverse bias.