• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.53-57
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• 2007

In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• Journal of Electrical Engineering and Technology
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• 제4권1호
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• pp.28-34
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• 2009

In a Gas Insulated Substation (GIS), Very Fast Transients (VFTs) are generated mainly due to switching operations. These transients may cause internal faults, i.e., layer-to-layer faults in a capacitively graded bushing as it is one of the most important terminal equipment for GIS. The healthiness of the bushing is generally verified by measuring its leakage current. However, the change in current magnitude/pattern is only marginal for different types of fault conditions. Leakage current monitoring (LCM) systems generate large amounts of data and computer aided interpretation of defects may be of great assistance when analyzing this data. In view of the above, ANN techniques have been used in this study for identification of these minor faults. A single layer perceptron network, a two layer feed-forward back propagation network and cascade correlation (CC) network models are used to identify interlayer faults in the bushing. The effectiveness of the CC network over perceptron and back propagation networks in identification of a fault has been analysed as part of the paper.

• 대한전자공학회논문지SP
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• 제46권4호
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• pp.67-75
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• 2009

현재 무선망 등 다양한 네트워크에 적응적 서비스를 제공하기 위해 비디오 데이터에 확장성을 제공하는 다계층 비디오 부호화 기법을 사용하고 있다. 하지만 네트워크에서는 전송 에러로 인한 패킷 손실은 복호된 비디오에 오류를 발생시킨다. 특히 연집 에러에 의한 화질 저하는 현재 프레임뿐만 아니라 다음의 인트라 프레임이 나타날 때까지 파급되어 비디오 화질의 치명적 열화를 발생시킨다. 이러한 문제를 인코더에 의존하지 않고 디코더에서 독립적으로 해결하기 위해 본 논문에서는 다계층 비디오 부호화에 적합한 에러 은닉 기법을 제안한다. 제안된 기법은 다계층 비디오 부호화 기법의 계층 간 유사도와 에러 은닉 기법에 널리 사용되는 POCS 기법을 이용한다. POCS 기법의 적절한 초기치는 반복횟수를 줄일 수 있고, 성능에 영향을 미친다. 초기치 설정을 위해 본 논문에서는 계층 간 상관도와 이웃한 블록들 간의 상관도를 이용한다. 모의실험에서 제안된 에러 은닉의 우수성을 볼 수 있다.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1049-1055
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• 2004

Chemical Mechanical Polishing (CMP) is referred to as a three body tribological system, because it includes two solids in relative motion and the CMP slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason not only for the friction force but also for material removal during polishing, the friction force generated during CMP process was investigated with the change of abrasive size and concentration of CMP slurry. The threshold point of average coefficient of friction (COF) with increase in abrasives concentration during interlayer dielectric (ILD) CMP was found experimentally and verified mathematically based on contact mechanics. The predictable models, Mode I (wafer is in contact with abrasives and pad) and Mode II (wafer is in contact with abrasives only), were proposed and used to explain the threshold point. The average COF value increased in the low abrasives concentration region which might be explained by Mode I. In contrast the average COF value decreased at high abrasives concentration which might be regarded to as Mode II. The threshold point observed seemed to be due to the transition from Mode I to Mode II. The tendency of threshold point with the variation of abrasive size was studied. The increase of particle radius could cause contact status to reach transition area faster. The correlation between COF and material removal rate was also investigated from the tribological and energetic point of view. Due to the energy loss by vibration of polishing equipment, COF value is not proportional to the material removal rate in this experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.118-118
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• 2008

The oxide CMP has been applied to interlayer dielectric(ILD) and shallow trench isolation (STI) in chip fabrication. Recently the slurry used in oxide CMP being changed from silica slurry to ceria (cerium dioxide) slurry particularly in STI CMP, because the material selectivity of ceria slurry is better than material selectivity of silica slurry. Moreover, the ceria slurry has good a planarization efficiency, compared with silica slurry. However ceria abrasives make a material removal rate too high at the region of wafer center. Then we focuses on why profile of material removal rate is convex. The material removal rate sharply increased to 3216 $\AA$/min by $4^{th}$ run without conditioning. After $4^{th}$ run, material removal rate converged. Furthermore, profile became more convex during 12 run. And average material removal rate decreased when conditioning process is added to end of CMP process. This is due to polishing mechanism of ceria. Then the ceria abrasive remains at the pad, in particular remains more at wafer center contacted region of pad. The field emission scanning electron microscopy (FE-SEM) images showed that the pad sample in the wafer center region has a more ceria abrasive than in wafer outer region. The energy dispersive X-ray spectrometer (EDX) verified the result that ceria abrasive is deposited and more at the region of wafer center. Therefore, this result may be expected as ceria abrasives on pad surface causing the convex profile of material removal rate.

• 한국도로학회논문집
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• 제15권4호
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• pp.85-94
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• 2013

PURPOSES: The performance of tack coat, commonly used for layer interface bonding, is affected by application rate and curing time. In this study, bonding strength tests were performed according to the application rate and curing time of asphalt emulsion. Based on finding from this study, optimum application rates and curing times are proposed. METHODS: In order to investigate bonding characteristic of asphalt emulsion, tests were performed on both asphalt concrete pavement and portland concrete pavement. Also, asphalt emulsions were tested at the application rate of 0, 0.2, 0.4, 0.6, and $0.8{\ell}/m^2$ and at the curing time of 0, 0.5, 1, 2, and 24 hours. Pull-off test and shear bonding strength test, which commonly used for bonding strength measurement of asphalt emulsion, were adopted for this study. To assess field performance under different testing condition, asphalt emulsions were applied to in-service pavement. Throughout coefficient of determination analysis between material index properties from asphalt emulsion and mechanical response from bonding strength tests, performance correlativity was analyzed. RESULTS: Test results show that optimum application rate for asphalt overlay on asphalt concrete pavement (AOA) and asphalt overlay on concrete pavement (AOC) was $0.4{\sim}0.5{\ell}/m^2$ and $0.3{\sim}0.5{\ell}/m^2$, respectively. According to the curing time increment, tensile strength and shear strength of AOC were increased to 22~44% and 20~39%, respectively. AOA case also show strength increment in tensile strength (42%) and shear strength (9%). We tested the applicability of tack coat materials at the field sites, and our findings demonstrated that the bonding (for D and E) and rapid curing (for B, C, and D, E) performances were superior than others. Among material index properties, there was a high correlation between penetration ratio and bonding strength test result. CONCLUSIONS : Result show that interlayer bonding strength was affected by asphalt emulsion type, application rate and curing time. AOC required slightly higher application ($0.1{\ell}/m^2$) than AOA. Both AOA and AOC cases show higher strength at longer curing time. Up to 2hours of curing, rapid strength increments were observed, but strength increment ratio was decreased after 2hours of curing. From the observed correlation between penetration ratio and bonding strength, it is expected that penetration ratio can be used as one of important factors affecting bonding strength analysis.