• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.560-567
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• 1995

Interfacial reactions, phase equilibria and elecrrical properties of Co films on (001) oreinted GaAs substrate, in the temperature range 300-$700^{\circ}C$ for 30min. have been investigated using x-ray diffraction and Augger electron spectropcopy. Cobalt started to react with GaAs at 38$0^{\circ}C$ by formation of Co$_{2}$GaAs phase. At 42$0^{\circ}C$, CoGa and CpAs nucleated at the Co and Co$_{2}$GaAs interface and grew with Co$_{2}$GaAs upto 46$0^{\circ}C$. contacts produced in this annealing regime were rectifying and Schottky varrier heights increased from 0.688eV(as-deposite state) up to 0.72eV(42$0^{\circ}C$). In the subsequent reation, the ternary phase started to decompose and lost stoichiometry at 50$0^{\circ}C$. At higher temperature, Co$_{2}$GaAs disappered and CoGa/CoAs/GaAs layer structures were formed. Contacts produced at higher temperature regime(>50$0^{\circ}C$) showed very low effective barriers. The results of interfacial reactions can be understood from the Co-Ga-As ternary phase diagram.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.63-77
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• 1998

The oxidation of NiAl(110) was investigated in the temperature regime between 300K and 1300 K using LEED (low energy electron diffraction), TPD (temperature programmed desorption) and HREELS (high resolution electron energy loss spectroscopy). The adsorption of N2O and O2 up to reconstructions. Stepwise annealing of the oxygen-saturated sample from 600 K to 1300K in UHV (ultra-high vacuum,) results in firstly the onset of randomly oriented then finally fairly well-ordered. 5 ${\AA}$ Al2O3 film with quasi-hexagonal periodicity. Ordered thicker oxide films of 18-30 ${\AA}$ seem to be grown on this interfacial oxide layer by direct oxidation of sample at elevated temperature between 1150 and 1300 K because of the LEED pattern consisting of new broad hexagonal spots and the previous 5 ${\AA}$ spots. Although the periodicity of surface oxygen arrays shows no significant change from an hexagonal close-packing, the O-O distance changes from ∼3.0 ${\AA}$ film to ∼2.9 ${\AA}$ for thicker oxides. with the appearance of Auger parameter, for the 5${\AA}$ film can be described better as an interfacial oxide layer. The observation of three symmetric phonon peaks can be also a supporting evidence for this phase assignment since thicker oxide films on the Same Ni2Al3(110) show somewhat different phonon structure much closer to that of the ${\gamma}$-Al2O3. The adsorption/desorption of methanol further proves the preparation of less-defective and/or oxygen-terminated Al2O3 films showing ordered phase transitions with the change of oxide thickness between 5 ${\AA}$ to 30 ${\AA}$.

• Computers and Concrete
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• v.24 no.3
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• pp.249-258
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• 2019

In order to investigate the strength recovery of fire-damaged concrete after post-fire curing, concrete specimens were heating at $2^{\circ}C/min$ or $5^{\circ}C/min$ to 400, 600 and $800^{\circ}C$, and these exposed specimens were soaked in the water for 24 hours and following by 29-day post-fire curing. The compressive strength and split tensile strength of the high-temperature-exposed specimens before and after post-fire curing were tested. The proportion of split aggregate in the split surfaces was analyzed to evaluate the mortar-aggregate interfacial strength. After the post-fire curing process, the split tensile strength of specimens exposed to all temperatures was recovered significantly, while the recovery of compressive strength was only obvious within the specimens exposed to $600^{\circ}C$. The tensile strength is more sensitive to the mortar-aggregate interfacial cracks, which caused that the split tensile strength decreased more after high-temperature exposure and recovery more after post-fire curing than the compressive strength. The mortar-aggregate interfacial strength also showed remarkable recovery after post-fire curing, and it contributed to the recovery of split tensile strength.

• Advances in concrete construction
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• v.15 no.6
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• pp.359-376
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• 2023

Ultra-high-performance concrete (UHPC) has become an attractive cast-in-place repairing material for existing engineering structures. The present study aims to investigate age-dependent high-early-strength UHPC (HESUHPC) material properties (i.e., compressive strength, elastic modulus, flexural strength, and tensile strength) as well as interfacial shear properties of HESUHPC-normal strength concrete (NSC) composites cured at different season temperatures (i.e., summer, autumn, and winter). The typical temperatures were kept for at least seven days in different seasons from weather forecasting to guarantee an approximately consistent curing and testing condition (i.e., temperature and relative humidity) for specimens at different ages. The HESUHPC material properties are tested through standardized testing methods, and the interfacial bond performance is tested through a bi-surface shear testing method. The test results quantify the positive development of HESUHPC material properties at the early age, and the increasing amplitude decreases from summer to winter. Three-day mechanical properties in winter (with the lowest curing temperature) still gain more than 60% of the 28-day mechanical properties, and the impact of season temperatures becomes small at the later age. The HESUHPC shrinkage mainly occurs at the early age, and the final shrinkage value is not significant. The HESUHPC-NSC interface exhibits sound shear performance, the interface in most specimens does not fail, and most interfacial shear strengths are higher than the NSC-NSC composite. The HESUHPC-NSC composites at the shear failure do not exhibit a large relative slip and present a significant brittleness at the failure. The typical failures are characterized by thin-layer NSC debonding near the interface, and NSC pure shear failure. Two load-slip development patterns, and two types of main crack location are identified for the HESUHPC-NSC composites tested in different ages and seasons. In addition, shear capacity of the HESUHPC-NSC composite develops rapidly at the early age, and the increasing amplitude decreases as the season temperature decreases. This study will promote the HESUHPC application in practical engineering as a cast-in-place repairing material subjected to different natural environments.

• Journal of the Korean Applied Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2006

It is desirable to have an accurate expression on the temperature dependence of surface(or interfacial) tension ${\sigma}$, because most of the interfacial thermodynamic functions can be derived from it. There have been proposed several equations on the temperature dependence of the surface tension, ${\sigma}(T)$. Among them $E{\ddot{o}}tv{\ddot{o}}s$ equation and the one modified by Katayama, which is called Katayama equation, for improving accuracies of $E{\ddot{o}}tv{\ddot{o}}s$ equation close to critical points, have been most well-known. In this article Katayama equation is interpreted on the basis of the cell model to understand the nature of the equation. The cell model results in an expression very similar to Katayama equation. This implies that, although $E{\ddot{o}}tv{\ddot{o}}s$ and Katayama equations were obtained on the basis of experimental results, they have a sound theoretical background. The Katayama equation is also modified with the phase volume replaced with a critical scaling expression. The modified Katayama equation becomes a power-law equation with the exponent slightly different from the value obtained by critical-scaling theory. This implies that Katayama equation can be replaced by a critical-scaling equation which is proven to be accurate.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.10
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• pp.183-190
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• 2003

Major device failures such as die cracking, interfacial delamination and warpage in flip chip packages are due to excessive heat and thermal gradients- There have been significant researches toward understanding the thermal performance of electronic packages, but the majority of these studies do not take into account the combined effects of thermo-mechanical interactions of the different package constituents. This paper investigates the thermo-mechanical performance of flip chip package constituents based on the finite element method with thermo-mechanically coupled elements. Delaminations with different lengths between the silicon die and underfill resin interfaces were introduced to simulate the defects induced during the assembly processes. The temperature gradient fields and the corresponding stress distributions were analyzed and the results were compared with isothermal case. Parametric studies have been conducted with varying thermal conductivities of the package components, substrate board configurations. Compared with the uniform temperature distribution model, the model considering the temperature gradients provided more accurate stress profiles in the solder interconnections and underfill fillet. The packages with prescribed delaminations resulted in significant changes in stress in the solder. From the parametric study, the coefficients of thermal expansion and the package configurations played significant roles in determining the stress level over the entire package, although they showed little influence on stresses profile within the individual components. These observations have been implemented to the multi-board layer chip scale packages (CSP), and its results are discussed.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.127-130
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• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.