• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.2-62
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• 2003

Material Characteristics of zirconium oxide thin films obtained by plasma enhanced chemical vapor deposition on p-type Si(100) substrates were investigated to explain their unable electrical properties. The films obtained without heating had polycrystalline nanograins that are mostly of a tetragonal phase under oxygen-deficient plasma conditions but transformed into a monoclinic phase with increasing $O_2$ addition in the plasma. Mostly amorphous bulk $ZrO_2$ with a relatively thicker and smoother interfacial layer was obtained from oxygen-rich plasmas, resulting in a decrease in both the overall dielectric constant and the leakage current density. the interfacial layer formed between the bulk $ZrO_2$ and Si substrate was analyzed to be zirconium silicate, which approached $SiO_2$ as its zirconium content decreased with the increasing gas phase $O_2$ content.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.6.2-6.2
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• 2011

Block copolymer (BCP) self-assembly in a film geometry has recently been the focus of increased research interest due to their potential use as templates and scaffolds for the fabrication of nanostructured materials. The phase behavior in a thin film geometry that confines polymer chains to the interfaces will be influenced by the interfacial interactions at substrate/polymer and polymer/air and the commensurability between the equilibrium period (L0) of the BCP and the total film thickness. We investigated the phase transitions for the films of block copolymers (BCPs) on the modified surface, like the order-to-disorder transition (ODT) by in-situ grazing incidence small angle x-ray scattering (GISAXS) and transmission electron microscopy (TEM). The selective interactions on the surface by a PS-grafted substrate provide the preferential interactions with the PS component of the block, while a random copolymer (PS-r-PMMA) grafted substrate do the balanced interfacial interactions on the surface. The thickness dependence of order-to-disorder behavior for BCP films will be discussed in terms of the surface interactions.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.19-23
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• 2015

In this study, two types of Au/TiW bump samples were fabricated by the electroplating process onto Al/Si and SiN/Si wafers for the COG (Chip On Glass) packaging. TiW was used as the UBM (Under Bump Metallurgy) material of the Au bump and it was deposited by a sputtering method under the sputtering powers ranges from 500 to 5000 Watt. We investigated the delamination phenomenas for the prepared samples as a function of the input sputtering powers. The stable interfacial adhesion condition was found to be 1500 Watt in sputtering power. In addition, the SAICAS (Surface And Interfacial Cutting Analysis System) measurement was used to find the adhesion strength of Au bumps for the prepared samples. TiW UBM films were deposited at the 1500 Watt sputtering power. As a results, there was a similar adhesion strengths between TiW/Au interfacial films on Al/Si and SiN/Si wafers. However, the adhesion strength of TiW UBM sputtering films on Al and SiN under films were 2.2 times differences, indicating 0.475 kN/m for Al/Si wafer and 0.093 kN/m for SiN/Si wafer, respectively.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.740-742
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• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• Composites Research
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• v.27 no.5
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• pp.196-200
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• 2014

A novel, simple and totally recyclable method has been developed for the synthesis of nontoxic, biocompatible and biodegradable bio-composite films from soy protein and silk protein. Bio films are defined as flexible films prepared from biological materials such as protein. These materials have potential application in medical and food as a packaging material. Their use depends on various parameters such as mechanical (strength and modulus), thermal, among others. In this study, prepare and characterization of bio films made from Soy Protein Isolate (SPI) (matrix) and Silk Fiber (SF) (reinforcement) through solution casting method by the addition of plasticizer and crosslinking agent. The obtained SPI and SPI/SF composites were subsequently subjected to evaluate their mechanical and thermal properties by using Universal Testing Machine and Thermal Gravimetric Analyzer respectively. The tensile testing showed significant improvements in strength with increasing amount of SF content and the % elongation at break of the composites of the SPI/SF was lower than that of the matrix. Though the interfacial bonding was moderate, the improvement in tensile strength and modulus was attributed to the higher tensile properties of the silk fiber.

• Journal of the Korea Institute of Military Science and Technology
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• v.6 no.3
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• pp.44-53
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• 2003

Cu/C films were prepared at room temperature under $Cu(hfac)_2-Ar-H_2$ atmosphere in order to obtain metallized polymer by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The room temperature MOCVD on polymer substrate could be possible by collaboration of ECR and a DC bias. Structural analysis of the films by ECR was found that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. The increase in $H_2$ contents brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with low sheet electric resistance were prepared in argon atmosphere. The electric sheet resistance of Cu/C films with good interfacial property were controlled at $10^8$~$10^0$ Ohm/sq. ranges by the $H_2$/Ar mole ratio and the shielding effectiveness of the film showed maximum up to 45dB in the our experimental range.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.86-87
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• 1994

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.41-46
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• 2013

Efficient and inexpensive solar cells are necessary for photo-voltaic to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimized using a surface passivation technique suitable for manufacturing. Recently it has been shown that aluminum oxide thin films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells to attract positive-charged holes. Especially aluminum oxide thin film is a quite suitable passivation on the rear side of p-type silicon solar cells. This paper, it demonstrate the interfacial microstructure and electrical properties of mono-crystalline silicon surface passivated by $Al_2O_3$ films during firing process as applied for screen-printed solar cells. The first task is a comparison of the interfacial microstructure and chemical bonds of PECVD $Al_2O_3$ and of PEALD $Al_2O_3$ films for the surface passivation of silicon. The second is to study electrical properties of double-stacked layers of PEALD $Al_2O_3$/PECVD SiN films after firing process in the temperature range of $650{\sim}950^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.6 no.1
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• pp.1-6
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• 1996

To simulate the characteristics of magnetic exchange coupling at the interface of MR/TbCo thin films, the directions of magnetizations were calculated by minimizing energy in the films. Newton method and Gauss-Seidel method were used. The width of M-H curve increased with TbCo anisotropy constant, and with the thickness of the transition region of TbCo layer. Hysteresis loop width became extremely narrow (less than 10 Oe of coercivity), when the TbCo transition region length was $400\;\AA$. Also the hysteresis loop of films with low interfacial exchange coupling constant was similiar to that of short transition region length. When interfacial exchange coupling constant was 1/100 of perfect coupling, hysteresis loop showed a coercivity of less than 10 Oe. Comparing the measured hysteresis loop of a fabricated sample with that of simulated one, exchange coupling con¬stant could be estimated.