• 제목/요약/키워드: Interfacial deposition

검색결과 149건 처리시간 0.024초

Silicon Waferdnl에 화학증착된 Silicon Dioxide 박막에 관한 연구 (A Study on Chemical Vapor Deposited SiO2 Films on Si Water)

  • 김기열;최돈복;소명기
    • 한국세라믹학회지
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    • 제27권2호
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    • pp.219-225
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    • 1990
  • Silicon dioxide thin film has been grown by a chemical vapor deposition (CVD) technique using SiH4, and O2 gaseous mixture on a silicon substrate. The experimental results indicated that the deposition rate as a function of the input ratio (O2/SiH4) shows two regions, increasing region and decreasing region. Also the deposition rate increases with increasing the deposition temperature. The microstructure of deposited silicon dioxide films is amorphous. The experimental results of infrared absorption spectrums indicate that Si-H and Si-OH bond increase with decreasing input ratio, but Si-O bond is independent on the input ratio. The interfacial charge of deposited silicon dioxide decreases with increasing input ratio.

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The effective properties of saturated concrete healed by EDM with the ITZs

  • Chen, Qing;Jiang, Zhengwu;Zhu, Hehua;Ju, J.W.;Yan, Zhiguo;Li, Haoxin
    • Computers and Concrete
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    • 제21권1호
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    • pp.67-74
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    • 2018
  • A differential scheme based micromechanical framework is proposed to obtain the effective properties of the saturated concrete repaired by the electrochemical deposition method (EDM) considering the interfacial transition zone (ITZ) effects. The constituents of the repaired concrete are treated as different phases, consisting of (micro-)cracks, (micro-)voids and (micro-)pores (occupied by water), deposition products, intrinsic concrete made up by the three traditional solid phases (i.e., mortar, coarse aggregates and their interfaces) and the ITZs. By incorporating the composite sphere assemblage (CSA) model and the differential approach, a new multilevel homogenization scheme is utilized to quantitatively estimate the mechanical performance of the repaired concrete with the ITZs. The CSA model is modified to obtain the effective properties of the equivalent particle, which is a three-phase composite made up of the water, deposition products and the ITZs. The differential scheme is employed to reach the equivalent composite of the concrete repaired by EDM considering the ITZ effects. Moreover, modification procedures considering the ITZ effects are presented to attain the properties of the repaired concrete in the dry state. Results in this study are compared with those of the existing models and the experimental data. It is found that the predictions herein agree better with the experimental data than the previous models.

Temperature and the Interfacial Buffer Layer Effects on the Nanostructure in the Copper (II) Phthalocyanine: Fullerene Bulk Heterojunction

  • Kim, Hyo Jung;Kim, Jang-Joo;Jeon, Taeyeol;Kong, Ki Won;Lee, Hyun Hwi
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.275.1-275.1
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    • 2014
  • The effects of the interfacial buffer layer and temperature on the organic bulk heterojunction (BHJ) nanostructures of copper phthalocyanine (CuPc) and fullerene (C60) systems were investigated using real time in-situ x-ray scattering. In the CuPc:C60 BHJ structures, standing-on configured ${\gamma}$-CuPc phase was formed by co-deposition of CuPc and C60. Once formed ${\gamma}$-phase was thermally stable during the annealing upon $180^{\circ}C$. Meanwhile, the insertion of CuI buffer layer prior to deposition of the CuPc:C60 BHJ layer induced lying-down configured CuPc crystals in the BHJ layer. The lying CuPc peak intensity and the lattice parameter were increased by the thermal annealing. This increment of the intensity seemed to be related to the strain at the interface between CuPc:C60 and CuI, which was proportional to the enhancement of the power conversion efficiency of the device.

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$Si_3N_4-TiC$ Ceramic 공구에 화학증착된 TiC, TiN 및 Ti(C, N)에 관한 연구 (A Study on the Chemically Vapor Deposited TiC, TiN, and TiC(C, N) on $Si_3N_4$-TiC Ceramic Tools.)

  • 김동원;김시범;이준근;천성순
    • Tribology and Lubricants
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    • 제4권2호
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    • pp.36-43
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    • 1988
  • Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

InGaAsP/InP이종접합구조의 격자부정합이 Photoluinescence효율에 미치는 영향 (Effects of Lattice Mismatch on Photoluminescence Efficiency of InGaAsP/InP Heterostructures)

  • 이종원
    • 한국재료학회지
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    • 제4권5호
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    • pp.516-523
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    • 1994
  • 이논문에서는 metal organic chemical vapor deposition(MOCVD)에 의해서 성장된 InGaAsP/InP이종접합구조의 격자부정합이 Photoluminescence(PL)효율에 미치는 영향을 연구하였다. 격자부정합은 (400)과 {511} x-ray reflection을 통해 측정하였고, 부정합 전위의 유무는 x-ray to-pography와 PL imaging을 통해 확인했다. PL강도 측정결과, 상대적으로 높은 PL강도는 탄성적으로 스트레인을 받은 시료에, 낮은 PL강도는 전위로 인해 비탄성적으로 변형된 시료에서 얻어졌다. 성장온도에서 격자정합된 시료의 PL효율이 실온에서 가장 높은 것을 알 수 있었다. PL강도와 X-ray반치폭과 관계에서, 시료의 광전자 특성이 구조적 특성과 밀접하게 연관됨을 알 수 있었다.

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Atomic Layer Deposition of HfO2 Films on Ge

  • Cho, Young Joon;Chang, Hyo Sik
    • Applied Science and Convergence Technology
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    • 제23권1호
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    • pp.40-43
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    • 2014
  • We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

MOCVD를 이용한 Hafnium Oxide 박막 증착 (The Deposition of Hafnium Oxide Thin Film using MOCVD)

  • 오재민;이태호;김영순;현광수;안진호
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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    • pp.198-202
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    • 2002
  • $HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.

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