• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.640-645
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• 1987

Surface states and interfacial phenomena at the undoped polycrystalline semiconductor particale-electrolyte interfaces were qualitatively analyzed based on the zeta potentials which were measured with microelectrophoresis measurements. The suspensions were composed of the undoped polycrystaline silicon(Si) or gallium arsenide (GaAs) semiconductor particles stalline Si and GaAs particles in the KCl electrolytes was 3.73~6.2x10**-4 cm\ulcornerV.sec and -2.3~1.4x10**-4cm\ulcornerV.sec at the same conditions, respectively. The range of zeta potentials corresponding to the electrophoretic mobilities is 47.8~80.1mV and -30.1~17.9mV, respectively. The variation of the zeta potentials of the undoped polycrystalline Si was similar to the doped crystalline Si. On the other hand, two points of zeta potential reversal occurred at the undoped polycrystalline GaAs-KCl electrolyte interfaces. The surface states of the undoped polycrystalline Si and GaAs were dominated by positively charged donor surface states. These surface states are attributed to adsorbed ion surface states (slow states) at the semiconductor oxide layer-electrolyte interfaces.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.10
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• pp.2675-2685
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• 1994

A study has been conducted to provide the experimental information for the velocity and temperature profiles of steam-air mixutre and to investigate their roles on the film condensation with wavy interface. Saturated gas mixture of steam-air was made to flow through the nearly horizontal$(4.1^{\circ})$ square duct of 0.1m width and 1.56m length at atmospheric pressure, and was condensated on the bottom cold plate. The air mass fraction in the gas mixture was changed from zero(W =0, pure steam) to one(W =1, pure air), and the bulk velocity was varied from 2 to 4 m/s. Water film was injected concurrently to investigate the effect of wavy interface on the condensation. The velocity and temperature profiles were measured by LDA system and thermocouples along the three parameters ; air mass fraction, mixture velocity and film flow rate. The profiles moved toward the interface with increasing steam mass fraction, mixture velocity and film flow rate. The Prandtl and Schmidt numbers were near one in the present experimental range, however there was no complete similarity between the velocity and temperature profiles of gas mixture. And the heat transfer characteristics and interfacial structure were coupled with each other.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.382.1-382.1
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• 2014

Graphene field-effect transistors (GFET) is one of candidates for future high speed electronic devices since graphene has unique electronic properties such as high Fermi velocity (vf=10^6 m/s) and carrier mobility ($15,000cm^2/V{\cdot}s$) [1]. Although the contact property between graphene and metals is a crucial element to design high performance electronic devices, it has not been clearly identified. Therefore, we need to understand characteristics of graphene/metal contact in the GFET. Recently, it is theoretically known that graphene on metal can be doped by presence of interface dipole layer induced by charge transfer [2]. It notes that doping type of graphene under metal is determined by difference of work function between graphene and metal. In this study, we present the GFET fabricated by contact metals having high work function (Pt, Ni) for p-doping and low work function (Ta, Cr) for n-doping. The results show that asymmetric conductance depends on work function of metal because the interfacial dipole is locally formed between metal electrodes and graphene. It induces p-n-p or n-p-n junction in the channel of the GFET when gate bias is applied. In addition, we confirm that charge transfer regions are differently affected by gate electric field along gate length.

• Analytical Science and Technology
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• v.8 no.4
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• pp.723-730
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• 1995

Cyclic voltammetry and in situ STM were employed to examine the interfacial structures of a Pt(111) electrode in 0.1 mM KCN (pH9.5) and 0.1 mM KSCN (pH7) solutions. In situ STM atomic resolution revealed well ordered (2${\surd}$3${\times}$2${\surd}$3)$R30^{\circ}$-6CN and ($2{\times}2$)-2SCN structures within the double layer charging region. Six CN adsorbates formed a hollow hexagon, which embraced a coadsorbed $K^+$ cation. In contrast, the coadsorbed $K^+$ cations on the SCN covered Pt(111) were poorly ordered, despite adsorbed SCN formed a long range ordered ($2{\times}2$)-2SCN adlattice. In situ STM revealed the pronounced influence of potential in controlling the structures of compact layers at the proximity of a Pt electrode. Cathodic polarization facilitated the replacement of the coadsorbed cations by protons.

• Journal of Powder Materials
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• v.24 no.2
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• pp.87-95
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• 2017

Lithium silicate, a lithium-ion conducting ceramic, is coated on a layer-structured lithium nickel manganese oxide ($LiNi_{0.7}Mn_{0.3}O_2$). Residual lithium compounds ($Li_2CO_3$ and LiOH) on the surface of the cathode material and $SiO_2$ derived from tetraethylorthosilicate are used as lithium and silicon sources, respectively. Powder X-ray diffraction and scanning electron microscopy with energy-dispersive spectroscopy analyses show that lithium silicate is coated uniformly on the cathode particles. Charge and discharge tests of the samples show that the coating can enhance the rate capability and cycle life performance. The improvements are attributed to the reduced interfacial resistance originating from suppression of solid-electrolyte interface (SEI) formation and dissolution of Ni and Mn due to the coating. An X-ray photoelectron spectroscopy study of the cycled electrodes shows that nickel oxide and manganese oxide particles are formed on the surface of the electrode and that greater decomposition of the electrolyte occurs for the bare sample, which confirms the assumption that SEI formation and Ni and Mn dissolution can be reduced using the coating process.

• Biotechnology and Bioprocess Engineering:BBE
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• v.7 no.1
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• pp.26-30
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• 2002

A droplet fractionation method was previously developed to concentrate a dilute nonfoaming protein solution. In that earlier study with invertase, it was demonstrated that droplets created by ultrasonic energy waves could be enriched up to 8 times that of the initial dilute invertase solution. In this study, a mixture of bromelain (a foaming protein) and invertase (a nonfoaming protein) is investigated as a preliminary step to determine if droplet fractionation can also be used to separate a non-foaming protein from foaming proteins. The foaming mixture containing bromelain is first removed by bubbling the binary mixture with air. After the foam is removed, the protein rich air-water interfacial layer is skimmed off (prior to droplet fractionation) so as not to interfere with the subsequent droplet production from the remaining bulk liquid, rich in non-foaming protein. Finally, sonic energy waves are then applied to this residual bulk liquid to recover droplets containing the non-foaming protein, presumed to be invertase. The primary control variable used in this droplet fractionation process is the pH, which ranged for separate experiments between 2 and 9. It was observed that the maximum overall protein partition coefficients of 5 and 4 were achieved at pH 2 and 4, respectively, for the initial foaming experiment followed by the post foaming droplet fractionation experiment.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.375-380
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• 1994

Matrices retaining electrolyte in phosphoric acid fuel cell were prepared with SiC to SiC whisker mixing ratios of 1:0.5, 1:1, 1:1.5, 1:2, 1:3 by tape casting method. When viscosity of the slurry was 5.9 poise and the SiC to SiC whisker mixing ratios were 1:1, 1:1.5, 1:2, the ranges of porosity, acid absorbency and bubble pressure were 80~90%, 2.5~6 and 700~2200 mmH2O, respectively. Those ranges are acceptable for a practical electrolyte-retaining matrix. With increasing the mixing ratio of SiC whisker to SiC, the porosity and the vol.% of large pores in the main pore size distribution which is between 1 and 10 ${\mu}{\textrm}{m}$, increased rapidly. Impedance spectroscopy was measured to know characteristics of matrix inside and contact region of matrix to catalyst layer. When the SiC to SiC whisker mixing ratio was 1:2, hydrogen ions were transported in the matrix most effectively because of high ionic conductivity and low activation energy due to high acid absorbency in spite of high interfacial resistance. The cell current density of the cell made using the matrix was 220 mA/$\textrm{cm}^2$ at 0.7 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.120-121
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• 2007

Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.

• Journal of the Korean Society of Industry Convergence
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• v.20 no.2
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• pp.149-155
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• 2017

Mechanical properties of carbon coated $SiC_f/SiC$ composites have been investigated, in conjunction with a detailed analysis of microstructure. Especially, the fracture behavior of $SiC_f/SiC$ composites by the induction of carbon coating layers has been examined. The matrix region of $SiC_f/SiC$ composites with ultra-fine SiC powders were consolidated by a liquid phase sintering (LPS) process, using a sintering additive of $Al_2O_3-Y_2O_3$ powder compound. In this composite, plain and satin- woven Tyranno SA fabrics were also utilized as a reinforcing material. A carbon interfacial layer was coated around satin-woven SiC fabrics. The characterization of LPS-$SiC_f/SiC$ composites was investigated by means of SEM and three point bending test.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.74-84
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• 2022

As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.